会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Spacing compensating electrostatic voltmeter
    • 间距补偿静电电压表
    • US06806717B2
    • 2004-10-19
    • US10225555
    • 2002-08-21
    • Alan J. Werner, Jr.Fred F. Hubble, IIIStanley J. WallaceR. Enrique ViturroEric PeetersJoel A. Kubby
    • Alan J. Werner, Jr.Fred F. Hubble, IIIStanley J. WallaceR. Enrique ViturroEric PeetersJoel A. Kubby
    • G01R2912
    • G01R29/12
    • An electrostatic type voltmeter for measuring the potential on a surface, the voltmeter including a probe; a support for supporting the probe in spaced relationship with the surface, the probe having a plurality of spacing element sites thereon for measuring a distance between each of the plurality of spacing element sites and a corresponding area on the surface opposite of each of the plurality of spacing element sites; a plurality of electrostatic element sites, intermixed and adjacent to the plurality of spacing element sites on the probe, for measuring a voltage between each of the plurality of spacing element sites and an area on the surface adjacent to the corresponding area opposite of each of the plurality of spacing element sites. A processor for compensating an output signal of the probe in response to the measurements received from the plurality of spacing element sites and the plurality of electrostatic element sites.
    • 一种用于测量表面上的电位的静电型电压表,所述电压表包括探针; 用于支撑所述探针与所述表面间隔开的关系,所述探针在其上具有多个间隔元件位置,用于测量所述多个间隔元件位置中的每一个之间的距离以及与所述多个 间距单元; 多个静电元件位置,与探针上的多个间隔元件位置相互混合并相邻,用于测量多个间隔元件位置中的每一个之间的电压,以及与相邻区域相对的相应区域相邻的表面上的区域 多个间距元件位置。 一种处理器,用于响应于从多个间隔元件位置和多个静电元件位点接收的测量值来补偿探针的输出信号。
    • 8. 发明授权
    • Method of fabricating ink jet printheads
    • 制造喷墨打印头的方法
    • US5716533A
    • 1998-02-10
    • US805834
    • 1997-03-03
    • James F. O'NeillEric Peeters
    • James F. O'NeillEric Peeters
    • B41J2/16H01L21/00B44C1/22
    • B41J2/1635B41J2/1604B41J2/1623B41J2/1629B41J2/1631
    • A method of fabricating ink jet printheads from channel plates with a low stress integral ink inlet filters and heater plates. The channel plates are obtained from p-type (100) silicon wafers, one surface of which has a lightly doped n-type patterned layer in the form of a screen. In the preferred embodiment, a first etch resistant material is deposited on both surfaces of the wafer and patterned on the surface of wafer opposite the one containing the n-type layer. The patterned first etch resistant material provides a first etch mask with channel and reservoir vias. A second etch resistant material is deposited over the first etch resistant material and patterned on the same wafer surface as the first etch resistant material in order to provide a second etch mask having reservoir vias smaller than the reservoir vias in the first etch mask, but aligned therewithin. The wafer with the two patterned etch masks is placed into an anisotropic etch bath and etched with a bias potential between the p-n junction formed by the patterned n-type layer and the p-type wafer and an electrode also in the etch bath. The patterned, lightly doped, n-type layer functions as an etch stop when under a bias potential, and because the doping level of the n-type layer is low, the internal stress is also low. When the reservoir recesses have been etched through the wafer leaving the patterned n-type layer covering the open bottom, the second etch resistant material is removed and the wafer replaced into the anisotropic etch bath to etch the channel recesses and complete the reservoir recesses with a similar bias potential. The first etch resistant material is removed and the channel wafer is aligned and bonded to a heater wafer. The bonded wafer pair is separated into a plurality of printheads having an integral inlet filter devoid of internal stress.
    • 从具有低应力整体式墨水入口过滤器和加热器板的通道板制造喷墨打印头的方法。 通道板从p型(100)硅晶片获得,其一个表面具有屏幕形式的轻掺杂的n型图案化层。 在优选实施例中,第一耐蚀刻材料沉积在晶片的两个表面上并在与包含n型层的晶片相对的晶片表面上图案化。 图案化的第一耐蚀刻材料提供具有通道和储存器通孔的第一蚀刻掩模。 第二耐蚀刻材料沉积在第一耐蚀刻材料上并且在与第一耐蚀刻材料相同的晶片表面上图案化,以便提供具有小于第一蚀刻掩模中的储存器通孔的储存器通孔的第二蚀刻掩模,但是对准 在其中。 将具有两个图案化蚀刻掩模的晶片放置在各向异性蚀刻槽中,并且在由图案化的n型层形成的p-n结与p型晶片之间以及也在蚀刻槽中的电极之间用偏置电位进行蚀刻。 图案化,轻掺杂的n型层在偏置电位下用作蚀刻停止,并且由于n型层的掺杂水平低,因此内部应力也较低。 当储存凹槽已被蚀刻通过晶片留下图案化的n型层覆盖开口底部时,去除第二耐蚀刻材料并将晶片替换成各向异性蚀刻槽以蚀刻通道凹槽并用一个 类似的偏置电位。 去除第一耐蚀刻材料并且将通道晶片对准并结合到加热器晶片。 接合晶片对被分离成具有不具有内部应力的整体入口过滤器的多个打印头。
    • 10. 发明授权
    • Transmucosal drug delivery device and method including chemical permeation enhancers
    • 粘膜下药物递送装置和方法包括化学渗透促进剂
    • US08882748B2
    • 2014-11-11
    • US12576087
    • 2009-10-08
    • Scott UhlandEric PeetersHussain Fatakdawala
    • Scott UhlandEric PeetersHussain Fatakdawala
    • A61K9/22A61M31/00A61K9/00
    • A61M31/002A61K9/0036
    • Devices and methods are provided for transmucosal drug delivery. The transmucosal drug delivery device may include a housing configured for intralumenal deployment, such as intravaginally, into a human or animal subject; a drug-dispensing portion which contains at least one drug, the drug-dispensing portion being configured to dispense the drug from the housing by positive displacement; and a permeability enhancer-dispensing portion configured to release or generate a permeability enhancing substance to disrupt at least one region of a mucosal barrier adjacent to the housing at a selected time while intralumenally deployed in the human or animal subject. The device may be operable to dispense the drug from the housing to a region of the mucosal barrier disrupted by the permeability enhancing substance.
    • 提供了用于经粘膜药物递送的装置和方法。 透粘膜药物递送装置可以包括构造成用于腔内部署的壳体,例如阴道内部分入人或动物受试者; 药物分配部分,其包含至少一种药物,所述药物分配部分构造成通过正位移从所述壳体分配药物; 以及渗透性增强剂分配部分,被配置为释放或产生渗透性增强物质,以在选择的时间在脉管内部署在人或动物受试者中的同时破坏邻近所述壳体的粘膜屏障的至少一个区域。 该装置可操作以将药物从壳体分配到由渗透性增强物质破坏的粘膜屏障的区域。