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1. 发明授权

US06979585B2 Micro-electromechanical system 失效
标题翻译：微机电系统
公开(公告)号：US06979585B2
公开(公告)日：2005-12-27
申请号：US10683909
申请日：2003-10-10
申请人： Eric L. Nikkel , Stephen J Potochnik , Charles C Haluzak , Chien-Hua Chen , Mickey Szepesi
发明人： Eric L. Nikkel , Stephen J Potochnik , Charles C Haluzak , Chien-Hua Chen , Mickey Szepesi
IPC分类号： B81B7/00 , H01L21/00 , H01L23/12
CPC分类号： B81C1/00269 , B81C2203/0109 , B81C2203/019
摘要： A microelectromechanical system (MEMS) device is created by forming mechanical structures supported by a substrate having a bond ring area laterally spaced from the mechanical structures and having a sacrificial layer surrounding the mechanical structures. A bond ring material is formed on top of the sacrificial layer and the bond ring area. Some of the bond ring material is then removed to create a bond ring.
摘要翻译：微机电系统（MEMS）装置通过形成由衬底支撑的机械结构而形成，该衬底具有与机械结构横向间隔开的结合环区域并且具有围绕机械结构的牺牲层。在牺牲层和结合环区域的顶部上形成结合环材料。然后去除一些粘结环材料以形成粘结环。

2. 发明授权

US06917459B2 MEMS device and method of forming MEMS device 有权
标题翻译： MEMS器件和MEMS器件的形成方法
公开(公告)号：US06917459B2
公开(公告)日：2005-07-12
申请号：US10454423
申请日：2003-06-03
申请人： Eric L. Nikkel , Mickey Szepesi , Sadiq Bengali , Michael G. Monroe , Stephen J Potochnik
发明人： Eric L. Nikkel , Mickey Szepesi , Sadiq Bengali , Michael G. Monroe , Stephen J Potochnik
IPC分类号： B81B3/00 , B81C1/00 , G02B26/08 , G02B26/00 , B05D5/06 , C23C14/02 , H01L21/00 , H01L21/44 , H01L21/461
CPC分类号： B81C1/00801 , B81B2201/042 , B81B2203/0181 , B81C2203/0714 , B81C2203/0771 , G02B26/0841
摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a first side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, forming a protective layer over the dielectric layer, defining an electrical contact area for the MEMS device on the protective layer, and forming an opening within the electrical contact area through the protective layer and the dielectric layer to the at least one conductive layer of the substructure.
摘要翻译：一种形成MEMS器件的方法包括提供包括基底材料的底层结构和形成在基底材料的第一侧上的至少一个导电层，在底层结构的至少一个导电层上形成介电层，形成保护层限定介电层上的MEMS器件的电接触面积，以及在通过保护层和电介质层的电接触区域内形成在子结构的至少一个导电层上的开口。

3. 发明授权

US07273693B2 Method for forming a planar mirror using a sacrificial oxide 失效
标题翻译：使用牺牲氧化物形成平面镜的方法
公开(公告)号：US07273693B2
公开(公告)日：2007-09-25
申请号：US10909074
申请日：2004-07-30
申请人： Eric L. Nikkel , Michael G. Monroe , Mickey Szepesi
发明人： Eric L. Nikkel , Michael G. Monroe , Mickey Szepesi
IPC分类号： G02B26/00
CPC分类号： G02B26/0841
摘要： A micro electromechanical system (MEMS) mirror, comprising a displaceable hinged member, a mirror plate, and a plurality of mirror support elements. The mirror plate has a planar mirror face affixed thereto. The plurality of mirror support elements extend between the displaceable hinged member and the mirror plate.
摘要翻译：一种微机电系统（MEMS）镜，包括可移位的铰接构件，镜板和多个镜支撑元件。镜面板具有固定在其上的平面镜面。多个镜支撑元件在可移动的铰接构件和镜板之间延伸。

4. 发明授权

US07079301B2 MEMS device and method of forming MEMS device 有权
标题翻译： MEMS器件和MEMS器件的形成方法
公开(公告)号：US07079301B2
公开(公告)日：2006-07-18
申请号：US11092410
申请日：2005-03-28
申请人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
发明人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
IPC分类号： G02B26/00
CPC分类号： B81C1/00174 , B81B2201/042 , G02B26/0841
摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.
摘要翻译：一种形成MEMS器件的方法包括提供一种子结构，其包括基底材料和形成在该基底材料一侧上的至少一个导电层，在该子结构的该至少一个导电层上形成介电层，该电介质层限定用于所述MEMS器件包括在所述电介质层上沉积导电材料，并且通过所述电介质层将所述导电材料与所述子结构的所述至少一个导电层连接，在所述导电材料和所述电介质层上形成牺牲层，包括在导电材料和电介质层上沉积硅，以及形成硅的基本平坦的表面，在致动区域内的牺牲层上形成致动元件，包括使致动元件与致动区域的导电材料通过牺牲层，并且基本上除去牺牲物在致动元件和电介质层之间。

5. 发明授权

US06914709B2 MEMS device and method of forming MEMS device 失效
标题翻译： MEMS器件和MEMS器件的形成方法
公开(公告)号：US06914709B2
公开(公告)日：2005-07-05
申请号：US10677825
申请日：2003-10-02
申请人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
发明人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
IPC分类号： B81B7/00 , G02B26/00 , G02B26/08 , H01L21/20
CPC分类号： B81C1/00174 , B81B2201/042 , G02B26/0841
摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.
摘要翻译：一种形成MEMS器件的方法包括提供一种子结构，其包括基底材料和形成在该基底材料一侧上的至少一个导电层，在该子结构的该至少一个导电层上形成介电层，该电介质层限定用于所述MEMS器件包括在所述电介质层上沉积导电材料，并且通过所述电介质层将所述导电材料与所述子结构的所述至少一个导电层连接，在所述导电材料和所述电介质层上形成牺牲层，包括在导电材料和电介质层上沉积硅，以及形成硅的基本平坦的表面，在致动区域内的牺牲层上形成致动元件，包括使致动元件与致动区域的导电材料通过牺牲层，并且基本上除去牺牲物在致动元件和电介质层之间。

6. 发明授权

US07874654B2 Fluid manifold for fluid ejection device 有权
标题翻译：用于流体喷射装置的流体歧管
公开(公告)号：US07874654B2
公开(公告)日：2011-01-25
申请号：US11818314
申请日：2007-06-14
申请人： Eric L. Nikkel , Chien-Hua Chen , Tracy B. Forrest
发明人： Eric L. Nikkel , Chien-Hua Chen , Tracy B. Forrest
IPC分类号： B41J2/045
CPC分类号： B41J2/1603 , B41J2/14145 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1639
摘要： A fluid manifold for a fluid ejection device including a plurality of fluid feed slots includes a first layer and a second layer adjacent the first layer, and a first fluid routing and a second fluid routing each provided through the first layer and the second layer. The fluid ejection device is supported by the second layer, and the first fluid routing is communicated with one of the fluid feed slots, and the second fluid routing is communicated with an adjacent one of the fluid feed slots. A pitch of the first fluid routing and the second fluid routing through the first layer is greater than a pitch of the fluid feed slots, and the first fluid routing and the second fluid routing each include a first channel oriented substantially parallel with the fluid feed slots and a second channel oriented substantially perpendicular to the fluid feed slots.
摘要翻译：用于包括多个流体供给槽的流体喷射装置的流体歧管包括第一层和邻近第一层的第二层，以及分别通过第一层和第二层设置的第一流体路线和第二流体路线。流体喷射装置由第二层支撑，并且第一流体路线与流体供给槽中的一个连通，并且第二流体路线与相邻的一个流体供给槽连通。第一流体路线和通过第一层的第二流体路线的间距大于流体供给槽的间距，并且第一流体路线和第二流体路径各自包括基本上平行于流体供给槽定向的第一通道以及基本上垂直于流体供给槽定向的第二通道。

7. 发明申请

US20080309743A1 Fluid manifold for fluid ejection device 有权
标题翻译：用于流体喷射装置的流体歧管
公开(公告)号：US20080309743A1
公开(公告)日：2008-12-18
申请号：US11818314
申请日：2007-06-14
申请人： Eric L. Nikkel , Chien-Hua Chen , Tracey B. Forrest
发明人： Eric L. Nikkel , Chien-Hua Chen , Tracey B. Forrest
IPC分类号： B41J2/18
CPC分类号： B41J2/1603 , B41J2/14145 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1639
摘要： A fluid manifold for a fluid ejection device including a plurality of fluid feed slots includes a first layer and a second layer adjacent the first layer, and a first fluid routing and a second fluid routing each provided through the first layer and the second layer. The fluid ejection device is supported by the second layer, and the first fluid routing is communicated with one of the fluid feed slots, and the second fluid routing is communicated with an adjacent one of the fluid feed slots. A pitch of the first fluid routing and the second fluid routing through the first layer is greater than a pitch of the fluid feed slots, and the first fluid routing and the second fluid routing each include a first channel oriented substantially parallel with the fluid feed slots and a second channel oriented substantially perpendicular to the fluid feed slots.
摘要翻译：用于包括多个流体供给槽的流体喷射装置的流体歧管包括第一层和邻近第一层的第二层，以及分别通过第一层和第二层设置的第一流体路线和第二流体路线。流体喷射装置由第二层支撑，并且第一流体路线与流体供给槽中的一个连通，并且第二流体路线与相邻的一个流体供给槽连通。第一流体路线和通过第一层的第二流体路线的间距大于流体供给槽的间距，并且第一流体路线和第二流体路径各自包括基本上平行于流体供给槽定向的第一通道以及基本上垂直于流体供给槽定向的第二通道。

8. 发明申请

US20130106961A1 PRINTHEAD AND RELATED METHODS AND SYSTEMS 有权
标题翻译： PRINTHEAD及相关方法和系统
公开(公告)号：US20130106961A1
公开(公告)日：2013-05-02
申请号：US13695780
申请日：2010-05-27
申请人： Andrew L. Van Brocklin , Eric L. Nikkel
发明人： Andrew L. Van Brocklin , Eric L. Nikkel
IPC分类号： B41J2/045 , H01L21/02
CPC分类号： B41J2/04581 , B41J2/14233 , B41J2/161 , B41J2/1626 , B41J2002/14354 , B41J2002/14467 , B41J2202/13 , H01L21/02038
摘要： A printhead includes a moveable membrane, a piezoelectric actuator to move the membrane, and electronic circuitry disposed on the moveable membrane. A method of fabricating a printhead includes fabricating CMOS circuitry on a first side of a circuit wafer, and forming a chamber in a second side of the circuit wafer such that a bottom of the chamber forms a moveable membrane and the CMOS circuitry is disposed on the moveable membrane opposite the bottom of the chamber. A printing system includes a printhead having CMOS circuitry formed on a first side of a moveable membrane, a chamber having a bottom comprising a second side of the moveable membrane, and a piezoelectric actuator formed over the CMOS circuitry, configured to cause displacement of the moveable membrane into the chamber.
摘要翻译：打印头包括可移动膜，用于移动膜的压电致动器和设置在可移动膜上的电子电路。制造打印头的方法包括在电路晶片的第一侧上制造CMOS电路，并且在电路晶片的第二侧形成一个室，使得该室的底部形成可移动膜，并且将该CMOS电路设置在该电路晶片上可移动的膜与腔室的底部相对。打印系统包括具有形成在可移动膜的第一侧上的CMOS电路的打印头，具有包括可移动膜的第二侧的底部的室以及形成在CMOS电路上的压电致动器，该压电致动器构造成使可移动膜的位移膜进入腔室。

9. 发明授权

US07571650B2 Piezo resistive pressure sensor 失效
标题翻译：压电式压力传感器
公开(公告)号：US07571650B2
公开(公告)日：2009-08-11
申请号：US11830658
申请日：2007-07-30
申请人： James C. McKinnell , Eric L. Nikkel , Jennifer L. Wu , Adel B. Jilani
发明人： James C. McKinnell , Eric L. Nikkel , Jennifer L. Wu , Adel B. Jilani
IPC分类号： G01L9/06
CPC分类号： H04R17/02 , H04R1/406 , H04R25/00 , H04R31/00 , H04R31/006
摘要： Various embodiments and methods relating to a pressure sensor having a flexure supported piezo resistive sensing element are disclosed.
摘要翻译：公开了与具有弯曲支撑的压电感测元件的压力传感器有关的各种实施例和方法。

10. 发明授权

US07040735B2 Slotted substrates and methods and systems for forming same 有权
标题翻译：开槽衬底及其形成方法和系统
公开(公告)号：US07040735B2
公开(公告)日：2006-05-09
申请号：US10601157
申请日：2003-06-20
申请人： Jeremy Donaldson , Eric L. Nikkel , Jeffrey S. Obert , Jeffrey R. Pollard , Jeff Hess
发明人： Jeremy Donaldson , Eric L. Nikkel , Jeffrey S. Obert , Jeffrey R. Pollard , Jeff Hess
IPC分类号： B41J2/135 , B41J2/05
CPC分类号： B41J2/1631 , B41J2/14145 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1634
摘要： Methods and systems for forming compound slots in a substrate are described. In one exemplary implementation, a method forms a plurality of slots in a substrate. The method also etches a trench in the substrate contiguous with the plurality of slots to form a compound slot.
摘要翻译：描述了在衬底中形成复合槽的方法和系统。在一个示例性实施方式中，一种方法在衬底中形成多个槽。该方法还蚀刻与多个狭缝相邻的衬底中的沟槽，以形成复合槽。

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