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    • 2. 发明授权
    • Flash memory backup system and method
    • 闪存备份系统和方法
    • US08041879B2
    • 2011-10-18
    • US11318863
    • 2005-12-28
    • Eran Erez
    • Eran Erez
    • G06F11/16G06F11/00
    • G11C11/005G11C16/10G11C16/16G11C2216/14
    • A flash memory system includes a flash controller for controlling operation of at least two flash memory devices. A page buffer is allocated within each flash memory device, such that one page buffer functions as a designated target buffer and another page buffer functions as a mirror buffer. The flash controller transmits the page data to two flash memory devices simultaneously, such that no backup of the page data is required to be kept in the flash controller. Hence, there is no delay in writing the next page data from a host computer to the flash controller.
    • 闪存系统包括用于控制至少两个闪存设备的操作的闪存控制器。 在每个闪速存储器件内分配页面缓冲器,使得一个页面缓冲器用作指定的目标缓冲器,另一个页面缓冲器用作镜像缓冲器。 闪存控制器将页面数据同时发送到两个闪存设备,使得不需要将页面数据的备份保存在闪存控制器中。 因此,将下一页数据从主机写入闪存控制器是没有延迟的。
    • 3. 发明申请
    • Device for prioritized erasure of flash memory
    • 用于闪存优先擦除的设备
    • US20080059692A1
    • 2008-03-06
    • US11797378
    • 2007-05-03
    • Eran Erez
    • Eran Erez
    • G06F12/00
    • G06F12/0246
    • A storage device having prioritized-erasure capabilities including: a memory for storing data, the memory having at least one flash unit, wherein each flash unit has a plurality of blocks; and a controller configured: to write the data into the plurality of blocks; to assign an erasure-priority to each block, wherein the erasure-priority correlates with an erasure-priority of the data; and to erase the data in each block according to the erasure-priority of each block upon receiving an emergency-erase command. Preferably, the controller is configured to perform the writing of the data into the plurality of blocks in an arbitrary order in a first flash unit, and the writing into subsequent flash units is performed in correlation with the order in the first flash unit. Preferably, the erasing includes aborting erasure, before completing the erasure, for at least some of the plurality of blocks.
    • 一种具有优先删除功能的存储设备,包括:用于存储数据的存储器,所述存储器具有至少一个闪存单元,其中每个闪存单元具有多个块; 以及控制器,被配置为:将所述数据写入所述多个块中; 为每个块分配擦除优先级,其中擦除优先级与数据的擦除优先级相关; 并且在接收到紧急擦除命令时根据每个块的擦除优先级擦除每个块中的数据。 优选地,控制器被配置为在第一闪存单元中以任意顺序执行数据到多个块中的写入,并且与第一闪存单元中的顺序相关地执行对后续闪存单元的写入。 优选地,擦除包括在完成擦除之前针对多个块中的至少一些块中止擦除。
    • 4. 发明申请
    • Method and apparatus for intentionally damaging a solid-state disk
    • 有意损坏固态磁盘的方法和装置
    • US20060152173A1
    • 2006-07-13
    • US11113153
    • 2005-04-25
    • Eran Erez
    • Eran Erez
    • H05B41/36
    • G06F21/79G06F3/0601G06F2003/0692G11C16/22
    • A device and method for disabling one or more memory components of a solid state memory device such as a NAND flash memory device is provided. In some embodiments, the presently disclosed memory device includes a damaging mechanism operative to physically damage a memory component. In a particular embodiment, the memory component to be damaged includes at least one pin, and the damaging mechanism is operative to apply a voltage to at least one pin sufficient to damage one or more memory components. In some embodiments, the damaging mechanism is activated in accordance with one or more specific software commands and/or hardware signals. Optionally, the presently disclosed device includes a prioritizing mechanism for prioritizing an order in which specific memory components are damaged by the damaging mechanism.
    • 提供了一种用于禁止诸如NAND快闪存储器件的固态存储器件的一个或多个存储器组件的装置和方法。 在一些实施例中,本公开的存储器件包括可操作以物理损坏存储器部件的损坏机构。 在特定实施例中,待损坏的存储器组件包括至少一个引脚,并且损坏机构可操作以将电压施加到足以损坏一个或多个存储器组件的至少一个引脚。 在一些实施例中,损坏机制根据一个或多个特定的软件命令和/或硬件信号被激活。 可选地,本公开的设备包括优先级排序机制,用于对特定存储器组件被损坏机制损坏的顺序进行优先级排序。
    • 7. 发明授权
    • Correction of errors in a memory array
    • 更正存储器阵列中的错误
    • US08234539B2
    • 2012-07-31
    • US11951455
    • 2007-12-06
    • Eran Erez
    • Eran Erez
    • H03M13/00
    • G06F11/1068
    • A computer system for correction of errors in a memory array includes an error correction algorithm and a memory. The error correction algorithm is capable of correcting errors up to a first bit error rate in a correctable group of memory cells having a standard size. The memory is operative to store a first set of ECC bits having information corresponding to a first group of memory cells having a first size larger than the standard size, and to store a second set of ECC bits having information corresponding to a second group of memory cells having a second size smaller than said first size and being a portion of said first group. The error correction algorithm is operative to correct errors in the second group based on the second set of ECC bits if a failure occurs in correction of the first group based on the first set of ECC bits.
    • 用于校正存储器阵列中的错误的计算机系统包括纠错算法和存储器。 纠错算法能够在具有标准尺寸的可校正组的存储器单元中校正高达第一误码率的误差。 存储器用于存储具有对应于具有大于标准尺寸的第一大小的第一组存储器单元的信息的第一组ECC位,并且存储具有对应于第二组存储器的信息的第二组ECC位 具有小于所述第一尺寸的第二尺寸并且是所述第一组的一部分的单元。 如果基于第一组ECC位的第一组的校正发生故障,则纠错算法可用于基于第二组ECC比特来校正第二组中的错误。
    • 8. 发明申请
    • Adaptive Flash Interface
    • 自适应闪存接口
    • US20120017138A1
    • 2012-01-19
    • US12835292
    • 2010-07-13
    • Eran ErezSteven Shisan Cheng
    • Eran ErezSteven Shisan Cheng
    • G11C29/52G06F11/00
    • G06F11/1004G06F11/221G11C7/10G11C11/5628G11C16/0483G11C16/10G11C29/022G11C29/028G11C2029/0411
    • A structure, and corresponding operating techniques, are presented for the internal controller to memory circuit interface for memory systems such a flash memory card or other similarly structured devices. The interface between the controller circuit and memory circuit (or circuits) includes a feedback process where the amount of error that arises due to controller-memory transfers is monitored and the transfer characteristics (such as clock rate, drive strength, etc.) can be modified accordingly. For example, in addition to transferring a set of data, the transmitting side also generates and transmits a corresponding hash value for the set of data. When the set of data is received on the other side, a hash value is also generated there and compared to the received hash value to determine if these was transmission error. If there is no error, the transfer rate could, for example, be increased, while if there were error, it could be decreased.
    • 为内部控制器提供了一种结构和相应的操作技术,用于诸如闪存卡或其他类似结构的设备之类的存储器系统的存储器电路接口。 控制器电路和存储器电路(或电路)之间的接口包括反馈过程,其中监控由于控制器 - 存储器传输引起的错误量,并且传输特性(诸如时钟速率,驱动强度等)可以是 相应修改。 例如,除了传送一组数据之外,发送侧还生成并发送该组数据的相应散列值。 当在另一侧接收到该组数据时,也在其上生成哈希值并与接收的散列值进行比较以确定这些是否是传输错误。 如果没有错误,则可以例如增加传输速率,而如果存在错误,则可以减少传输速率。
    • 9. 发明授权
    • Systems for optimizing page selection in flash-memory devices
    • 用于优化闪存设备中页面选择的系统
    • US07779217B2
    • 2010-08-17
    • US11772218
    • 2007-06-30
    • Eran Erez
    • Eran Erez
    • G06F12/00
    • G06F12/0246G06F2212/7202G11C8/12G11C11/5621
    • A storage device is provided. The storage device includes a memory that includes interleaved fast and slow pages and a controller. In response to a command from a host of the storage device the controller stores fast-reading data in the memory. If the fast and slow pages alternate, the controller stores the fast-reading data in the first pages alternately with filler data in the low pages, and if contiguous pluralities of the fast and slow pages alternate, the controller stores the fast reading data in the contiguous pluralities of the fast pages alternately with the filler data in the contiguous pluralities of the slow pages.
    • 提供存储设备。 存储装置包括包括交错的快速和慢速页面的存储器和控制器。 响应于存储设备的主机的命令,控制器将快速读取数据存储在存储器中。 如果快速和慢速页面交替,则控制器将第一页中的快速读取数据与低页面中的填充数据交替存储,并且如果连续的多个快速和慢速页面交替,则控制器将快速读取数据存储在 连续多个快速页面与连续多个慢页面中的填充数据交替。
    • 10. 发明授权
    • Methods for optimizing page selection in flash-memory devices
    • 闪存设备中优化页面选择的方法
    • US07525870B2
    • 2009-04-28
    • US11772223
    • 2007-06-30
    • Eran Erez
    • Eran Erez
    • G11C7/00
    • G06F12/0246G06F2212/7202G11C8/12G11C11/5621
    • The present invention discloses methods for storing data in a flash-memory storage device, the method including the steps of: receiving, by the device, primary data to be stored in the device and to be read from the device at a primary reading speed; storing at least part of the primary data only in fast pages in the device, wherein the fast pages are located in multi-level cells of the device; designating, by the device, secondary data to be read from the device at a secondary reading speed, wherein the secondary reading speed is slower than the primary reading speed; and storing at least part of the secondary data only in slow pages in the device, wherein the slow pages are located in the multi-level cells. Preferably, the method further includes the step of: moving the secondary data from a previously-stored area in the device to the slow pages.
    • 本发明公开了一种在闪速存储器存储装置中存储数据的方法,该方法包括以下步骤:由设备接收存储在设备中并以初级读取速度从设备读取的主数据; 将至少部分主要数据仅存储在设备中的快速页面中,其中快速页面位于设备的多级单元中; 由所述装置指定要以二次读取速度从所述装置读取的辅助数据,其中所述次要读取速度慢于所述主要读取速度; 并且仅将第二数据的至少一部分存储在设备中的慢页中,其中慢页位于多级单元中。 优选地,该方法还包括以下步骤:将辅助数据从设备中的先前存储的区域移动到慢速页面。