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1. 发明授权

US08530319B2 Vertical silicide e-fuse 有权
标题翻译：垂直硅化物电熔丝
公开(公告)号：US08530319B2
公开(公告)日：2013-09-10
申请号：US12904435
申请日：2010-10-14
申请人： Ephrem G. Gebreselasie , Joseph M. Lukaitis , Robert R. Robison , William R. Tonti , Ping-Chuan Wang
发明人： Ephrem G. Gebreselasie , Joseph M. Lukaitis , Robert R. Robison , William R. Tonti , Ping-Chuan Wang
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and a method of manufacturing an e-fuse includes a substrate, a patterned gate insulator on the substrate, and a patterned gate conductor on the patterned gate insulator. The patterned gate conductor has sidewalls and a top. A silicide contacts the sidewalls of the patterned gate conductor, the top of the patterned gate conductor, and a region of the substrate adjacent the patterned gate insulator and the patterned gate conductor.
摘要翻译：一种制造电熔丝的装置和方法包括：衬底，衬底上的图案化栅极绝缘体，以及图案化栅极绝缘体上的图案化栅极导体。图案化的栅极导体具有侧壁和顶部。硅化物接触图案化栅极导体的侧壁，图案化栅极导体的顶部以及与图案化栅极绝缘体和图案化栅极导体相邻的衬底的区域。

2. 发明申请

US20120091556A1 VERTICAL SILICIDE E-FUSE 有权
标题翻译：垂直硅胶电子保险丝
公开(公告)号：US20120091556A1
公开(公告)日：2012-04-19
申请号：US12904435
申请日：2010-10-14
申请人： Ephrem G. Gebreselasie , Joseph M. Lukaitis , Robert R. Robison , William R. Tonti , Ping-Chuan Wang
发明人： Ephrem G. Gebreselasie , Joseph M. Lukaitis , Robert R. Robison , William R. Tonti , Ping-Chuan Wang
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An apparatus and a method of manufacturing an e-fuse includes a substrate, a patterned gate insulator on the substrate, and a patterned gate conductor on the patterned gate insulator. The patterned gate conductor has sidewalls and a top. A silicide contacts the sidewalls of the patterned gate conductor, the top of the patterned gate conductor, and a region of the substrate adjacent the patterned gate insulator and the patterned gate conductor.
摘要翻译：一种制造电熔丝的装置和方法包括：衬底，衬底上的图案化栅极绝缘体，以及图案化栅极绝缘体上的图案化栅极导体。图案化的栅极导体具有侧壁和顶部。硅化物接触图案化栅极导体的侧壁，图案化栅极导体的顶部以及与图案化栅极绝缘体和图案化栅极导体相邻的衬底区域。

3. 发明授权

US08378447B2 Electrically programmable fuse and fabrication method 有权
标题翻译：电可编程保险丝和制造方法
公开(公告)号：US08378447B2
公开(公告)日：2013-02-19
申请号：US13085632
申请日：2011-04-13
申请人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
发明人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
IPC分类号： H01L23/52
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.
摘要翻译：电可编程保险丝包括阳极，阴极和导电地连接阴极与阳极的熔断体，其可通过施加编程电流来编程。阳极和熔丝链路各自包括形成在多晶硅层上的多晶硅层和硅化物层，并且阴极包括多晶硅层和形成在阴极的多晶硅层的预定部分上的部分硅化物层，其位于阴极附近阴极和熔断体连接处的连接处。

4. 发明申请

US20110186963A1 ELECTRICALLY PROGRAMMABLE FUSE AND FABRICATION METHOD 有权
标题翻译：电可编程保险丝和制造方法
公开(公告)号：US20110186963A1
公开(公告)日：2011-08-04
申请号：US13085632
申请日：2011-04-13
申请人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
发明人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.
摘要翻译：电可编程保险丝包括阳极，阴极和导电地连接阴极与阳极的熔断体，其可通过施加编程电流来编程。阳极和熔丝链路各自包括形成在多晶硅层上的多晶硅层和硅化物层，并且阴极包括多晶硅层和形成在阴极的多晶硅层的预定部分上的部分硅化物层，其位于阴极附近阴极和熔断体连接处的连接处。

5. 发明授权

US06958621B2 Method and circuit for element wearout recovery 失效
标题翻译：元件回流的方法和电路
公开(公告)号：US06958621B2
公开(公告)日：2005-10-25
申请号：US10725984
申请日：2003-12-02
申请人： Giuseppe La Rosa , Joseph M. Lukaitis , Anastasios A. Katsetos , Stewart E. Rauch, III , Ping-Chuan Wang , Stephen P. Boffoli , Fernando J. Guarin , B. B. (Bob) Lawhorn
发明人： Giuseppe La Rosa , Joseph M. Lukaitis , Anastasios A. Katsetos , Stewart E. Rauch, III , Ping-Chuan Wang , Stephen P. Boffoli , Fernando J. Guarin , B. B. (Bob) Lawhorn
IPC分类号： H01L27/02 , H03K19/003 , H03K19/0175
CPC分类号： H01L27/0207
摘要： A recovery circuit and a method for employing the same are provided. The recovery circuit has a current driver and, preferably two pass-gates, a first pass-gate connected in series to the current driver and a second pass-gate connected to a ground. The recovery circuit also has a recovery assembly or element and one or more contacts operatively connecting the recovery circuit to a wearout sensitive circuit or circuit element.
摘要翻译：提供一种恢复电路及其应用方法。恢复电路具有电流驱动器，并且优选地是两个通过门，与电流驱动器串联连接的第一通过栅极和连接到地的第二通过栅极。恢复电路还具有恢复组件或元件以及可操作地将恢复电路连接到耗损敏感电路或电路元件的一个或多个触点。

6. 发明申请

US20120146186A1 THERMALLY CONTROLLED REFRACTORY METAL RESISTOR 有权
标题翻译：热控制的金属电阻器
公开(公告)号：US20120146186A1
公开(公告)日：2012-06-14
申请号：US12962722
申请日：2010-12-08
申请人： Joseph M. Lukaitis , Deborah M. Massey , Timothy D. Sullivan , Ping-Chuan Wang , Kimball M. Watson
发明人： Joseph M. Lukaitis , Deborah M. Massey , Timothy D. Sullivan , Ping-Chuan Wang , Kimball M. Watson
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： H01L28/20 , H01L23/3677 , H01L23/5228 , H01L27/0211 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.
摘要翻译：制造该结构的结构和方法包括：半导体衬底，其具有限定水平方向的顶表面和从最接近半导体衬底的顶表面的最底层到距离顶表面最远的最高水平层叠的多个互连层。每个互连层包括在垂直于水平方向的垂直方向上彼此物理连接的垂直金属导体。最底层的垂直导体物理地连接到衬底的顶表面，垂直导体形成连接到半导体衬底的散热片。一个电阻器被包含在最上层的上方的层中。垂直导体在电阻器的向下垂直电阻器占位面下对准，并且每个互连级别还包括位于水平方向上并且连接到垂直导体的水平金属导体。

7. 发明授权

US08592947B2 Thermally controlled refractory metal resistor 有权
$Thermally controlled refractory metal resistor$
标题翻译：耐热耐火金属电阻
公开(公告)号：US08592947B2
公开(公告)日：2013-11-26
申请号：US12962722
申请日：2010-12-08
申请人： Joseph M. Lukaitis , Deborah M. Massey , Timothy D. Sullivan , Ping-Chuan Wang , Kimball M. Watson
发明人： Joseph M. Lukaitis , Deborah M. Massey , Timothy D. Sullivan , Ping-Chuan Wang , Kimball M. Watson
IPC分类号： H01L23/36
CPC分类号： H01L28/20 , H01L23/3677 , H01L23/5228 , H01L27/0211 , H01L28/24 , H01L2924/0002 , H01L2924/00
摘要： A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.
摘要翻译：制造该结构的结构和方法包括：半导体衬底，其具有限定水平方向的顶表面和从最接近半导体衬底的顶表面的最底层到距离顶表面最远的最高水平层叠的多个互连层。每个互连层包括在垂直于水平方向的垂直方向上彼此物理连接的垂直金属导体。最底层的垂直导体物理地连接到衬底的顶表面，垂直导体形成连接到半导体衬底的散热片。一个电阻器被包含在最上层的上方的层中。垂直导体在电阻器的向下垂直电阻器占位面下对准，并且每个互连级别还包括位于水平方向上并且连接到垂直导体的水平金属导体。

8. 发明授权

US08003474B2 Electrically programmable fuse and fabrication method 有权
标题翻译：电可编程保险丝和制造方法
公开(公告)号：US08003474B2
公开(公告)日：2011-08-23
申请号：US12192387
申请日：2008-08-15
申请人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
发明人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
IPC分类号： H01L21/33
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.
摘要翻译：电可编程保险丝包括阳极，阴极和导电地连接阴极与阳极的熔断体，其可通过施加编程电流来编程。阳极和熔丝链路各自包括形成在多晶硅层上的多晶硅层和硅化物层，并且阴极包括多晶硅层和形成在阴极的多晶硅层的预定部分上的部分硅化物层，其位于阴极附近阴极和熔断体连接处的连接处。

9. 发明申请

US20100038747A1 ELECTRICALLY PROGRAMMABLE FUSE AND FABRICATION METHOD 有权
标题翻译：电可编程保险丝和制造方法
公开(公告)号：US20100038747A1
公开(公告)日：2010-02-18
申请号：US12192387
申请日：2008-08-15
申请人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
发明人： Kaushik Chanda , Ronald G. Filippi , Joseph M. Lukaitis , Ping-Chuan Wang
IPC分类号： H01L21/768 , H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： An electrically programmable fuse includes an anode, a cathode, and a fuse link conductively connecting the cathode with the anode, which is programmable by applying a programming current. The anode and the fuse link each include a polysilicon layer and a silicide layer formed on the polysilicon layer, and the cathode includes the polysilicon layer and a partial silicide layer formed on a predetermined portion of the polysilicon layer of the cathode located adjacent to a cathode junction where the cathode and the fuse link meet.
摘要翻译：电可编程保险丝包括阳极，阴极和导电地连接阴极与阳极的熔断体，其可通过施加编程电流来编程。阳极和熔丝链路各自包括形成在多晶硅层上的多晶硅层和硅化物层，并且阴极包括多晶硅层和形成在阴极的多晶硅层的预定部分上的部分硅化物层，其位于阴极附近阴极和熔断体连接处的连接处。

10. 发明授权

US08652922B2 Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture 有权
标题翻译：紧凑的热控薄膜电阻器，利用基板触点和制造方法
公开(公告)号：US08652922B2
公开(公告)日：2014-02-18
申请号：US13008459
申请日：2011-01-18
申请人： Joseph M. Lukaitis , Jed H. Rankin , Robert R. Robison , Dustin K. Slisher , Timothy D. Sullivan
发明人： Joseph M. Lukaitis , Jed H. Rankin , Robert R. Robison , Dustin K. Slisher , Timothy D. Sullivan
IPC分类号： H01L21/20
CPC分类号： H01L28/20 , H01L27/0207 , H01L27/1203
摘要： A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate and forming a trench in the resistor and into the substrate. The method also includes forming a liner on sidewalls of the trench and forming a core comprising a high thermal conductivity material in the trench and on the liner.
摘要翻译：形成半导体结构的方法包括在衬底上的绝缘体层上形成电阻器，并在电阻器中形成沟槽并进入衬底。该方法还包括在沟槽的侧壁上形成衬垫，并在沟槽和衬垫上形成包括高导热性材料的芯。

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