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1. 发明授权

US08748271B2 LDMOS with improved breakdown voltage 有权
标题翻译： LDMOS具有改善的击穿电压
公开(公告)号：US08748271B2
公开(公告)日：2014-06-10
申请号：US13046313
申请日：2011-03-11
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
IPC分类号： H01L29/772 , H01L29/40 , H01L29/49 , H01L29/78 , H01L29/51 , H01L29/66 , H01L29/423
CPC分类号： H01L29/7816 , H01L29/402 , H01L29/42368 , H01L29/495 , H01L29/4983 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66681
摘要： An LDMOS is formed with a field plate over the n− drift region, coplanar with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second coplanar gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack of a high-k metal gate and the second gate stack of a field plate on a gate oxide layer, forming the first and second gate stacks with different gate electrode materials on a common gate oxide, and forming the gate stacks separated from each other and with different gate dielectric materials.
摘要翻译： LDMOS在n-漂移区上形成有与栅叠层共面的场板，并且具有比栅叠层更高的功函数。实施例包括形成第一导电类型的阱，具有由第二导电类型阱包围的源，在衬底中具有漏极，在衬底上在第一阱的一部分上形成第一和第二共面栅叠层，分别调整第一和第二栅极堆叠的功函数，以获得第二栅极堆叠的较高功函数。其他实施例包括在栅极氧化物层上形成高k金属栅极的第一栅极堆叠和场板的第二栅极堆叠，在公共栅极氧化物上形成具有不同栅电极材料的第一和第二栅极堆叠，以及形成栅极堆叠彼此分离并具有不同的栅极电介质材料。

2. 发明授权

US08492235B2 FinFET with stressors 有权
公开(公告)号：US08492235B2
公开(公告)日：2013-07-23
申请号：US12980375
申请日：2010-12-29
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L29/0649 , H01L29/0847 , H01L29/1037 , H01L29/1054 , H01L29/41783 , H01L29/66795 , H01L29/7848 , H01L29/7849
摘要： A fin type transistor includes a dielectric layer on a substrate surface which serves to isolate the gate of the transistor from the substrate. The dielectric layer includes a non-selectively etched surface to produce top portions of fin structures which have reduced height variations across the wafer. The fin type transistor may also include a buried stressor and/or raised or embedded raised S/D stressors to cause a strain in the channel to improve carrier mobility.

3. 发明申请

US20120038009A1 Novel methods to reduce gate contact resistance for AC reff reduction 有权
标题翻译：降低栅极接触电阻的新方法
公开(公告)号：US20120038009A1
公开(公告)日：2012-02-16
申请号：US12806354
申请日：2010-08-11
申请人： Eng Huat Toh , Elgin Quek , Chunshan Yin , Chung Foong Tan , Jae Gon Lee
发明人： Eng Huat Toh , Elgin Quek , Chunshan Yin , Chung Foong Tan , Jae Gon Lee
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/517
摘要： A method (and semiconductor device) of fabricating a semiconductor device provides a field effect transistor (FET) with reduced gate contact resistance (and series resistance) for improved device performance. An impurity is implanted or deposited in the gate stack in an impurity region between the metal gate electrode and the gate contact layer. An anneal process is performed that converts the impurity region into a segregation layer which lowers the schottky barrier height (SBH) of the interface between the metal gate electrode (e.g., silicide) and gate contact layer (e.g., amorphous silicon). This results in lower gate contact resistance and effectively lowers the device's AC Reff.
摘要翻译：制造半导体器件的方法（和半导体器件）提供具有降低的栅极接触电阻（和串联电阻）的场效应晶体管（FET），以提高器件性能。在金属栅极电极和栅极接触层之间的杂质区域中将杂质注入或沉积在栅极堆叠中。执行退火处理，其将杂质区域转换成偏析层，其降低金属栅电极（例如，硅化物）和栅极接触层（例如非晶硅）之间的界面的肖特基势垒高度（SBH）。这导致较低的栅极接触电阻并有效降低器件的AC Reff。

4. 发明申请

US20120018815A1 Semiconductor device with reduced contact resistance and method of manufacturing thereof 有权
标题翻译：具有降低的接触电阻的半导体器件及其制造方法
公开(公告)号：US20120018815A1
公开(公告)日：2012-01-26
申请号：US12804487
申请日：2010-07-22
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Shiang Yang Ong , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Shiang Yang Ong , Elgin Quek
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7833 , H01L21/26506 , H01L21/28556 , H01L21/324 , H01L29/0847 , H01L29/41725 , H01L29/66575
摘要： A method (and semiconductor device) of fabricating a semiconductor device provides a filed effect transistor (FET) with reduced contact resistance (and series resistance) for improved device performance. An impurity is implanted in the source/drain (S/D) regions after contact silicide formation and a spike anneal process is performed that lowers the schottky barrier height (SBH) of the interface between the silicide and the lower junction region of the S/D regions. This results in lower contact resistance and reduces the thickness (and Rs) of the region at the silicide-semiconductor interface.
摘要翻译：制造半导体器件的方法（和半导体器件）提供具有降低的接触电阻（和串联电阻）的场效应晶体管（FET），以提高器件性能。在接触硅化物形成之后，在源极/漏极（S / D）区域中注入杂质，并且进行尖峰退火处理，其降低硅化物和S / D层的下部结区之间的界面的肖特基势垒高度（SBH） D区。这导致较低的接触电阻并且减小了硅化物半导体界面处的区域的厚度（和Rs）。

5. 发明授权

US08750037B2 Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof 有权
标题翻译：利用冲击电离和隧穿的非易失性存储器及其制造方法
公开(公告)号：US08750037B2
公开(公告)日：2014-06-10
申请号：US12456440
申请日：2009-06-16
申请人： Eng Huat Toh , Chung Foong Tan , Shyue Seng Tan , Jae Gon Lee , Elgin Quek
发明人： Eng Huat Toh , Chung Foong Tan , Shyue Seng Tan , Jae Gon Lee , Elgin Quek
IPC分类号： G11C16/04
CPC分类号： H01L29/7885 , G11C16/0408 , H01L29/42336 , H01L29/66825
摘要： A non-volatile memory device (and method of manufacture) is disclosed and structured to enable a write operation using an ionization impact process in a first portion of the device and a read operation using a tunneling process in a second portion of the device. The non-volatile memory device (1) increases hot carrier injection efficiency, (2) decreases power consumption, and (3) enables voltage and device scaling in the non-volatile memory devices.
摘要翻译：公开并构造了非易失性存储器件（和制造方法），以使得能够在器件的第一部分中使用电离冲击处理的写入操作以及在器件的第二部分中使用隧道工艺的读取操作。非易失性存储器件（1）增加了热载流子注入效率，（2）降低功耗，（3）使非易失性存储器件中的电压和器件缩放。

6. 发明授权

US08470700B2 Semiconductor device with reduced contact resistance and method of manufacturing thereof 有权
公开(公告)号：US08470700B2
公开(公告)日：2013-06-25
申请号：US12804487
申请日：2010-07-22
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Shiang Yang Ong , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Shiang Yang Ong , Elgin Quek
IPC分类号： H01L21/26
CPC分类号： H01L29/7833 , H01L21/26506 , H01L21/28556 , H01L21/324 , H01L29/0847 , H01L29/41725 , H01L29/66575
摘要： A method (and semiconductor device) of fabricating a semiconductor device provides a filed effect transistor (FET) with reduced contact resistance (and series resistance) for improved device performance. An impurity is implanted in the source/drain (S/D) regions after contact silicide formation and a spike anneal process is performed that lowers the schottky barrier height (SBH) of the interface between the silicide and the lower junction region of the S/D regions. This results in lower contact resistance and reduces the thickness (and Rs) of the region at the silicide-semiconductor interface.

7. 发明申请

US20120228705A1 LDMOS WITH IMPROVED BREAKDOWN VOLTAGE 有权
标题翻译： LDMOS具有改进的断电电压
公开(公告)号：US20120228705A1
公开(公告)日：2012-09-13
申请号：US13046332
申请日：2011-03-11
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7816 , H01L29/42364 , H01L29/42368 , H01L29/42372 , H01L29/495 , H01L29/4958 , H01L29/4966 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66681
摘要： An LDMOS is formed with a second gate stack over the n− drift region, having a common gate electrode with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, the first and second gate stacks sharing a common gate electrode, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack with a first high-k dielectric and the second gate stack with a second high-k dielectric, and forming the first and second gate stacks with asymmetric dielectrics.
摘要翻译： LDMOS在n漂移区上形成有第二栅极堆叠，其具有与栅极堆叠相同的公共栅电极，并且具有比栅极堆叠更高的功函数。实施例包括形成第一导电类型的阱，具有由第二导电类型阱包围的源，在衬底中具有漏极，在衬底上在第一阱的一部分上形成第一和第二栅极叠层，第二阱，第一和第二栅极堆叠共享公共栅极电极，并且调谐第一和第二栅极堆叠的功函数以获得用于第二栅极堆叠的较高功函数。其他实施例包括用第一高k电介质形成第一栅极堆叠，以及用第二高k电介质形成第二栅极堆叠，以及用不对称电介质形成第一和第二栅极堆叠。

8. 发明申请

US20120228695A1 LDMOS WITH IMPROVED BREAKDOWN VOLTAGE 有权
标题翻译： LDMOS具有改进的断电电压
公开(公告)号：US20120228695A1
公开(公告)日：2012-09-13
申请号：US13046313
申请日：2011-03-11
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/7816 , H01L29/402 , H01L29/42368 , H01L29/495 , H01L29/4983 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66681
摘要： An LDMOS is formed with a field plate over the n− drift region, coplanar with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second coplanar gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack of a high-k metal gate and the second gate stack of a field plate on a gate oxide layer, forming the first and second gate stacks with different gate electrode materials on a common gate oxide, and forming the gate stacks separated from each other and with different gate dielectric materials.
摘要翻译： LDMOS在n-漂移区上形成有与栅叠层共面的场板，并且具有比栅叠层更高的功函数。实施例包括形成第一导电类型的阱，具有由第二导电类型阱包围的源，在衬底中具有漏极，在衬底上在第一阱的一部分上形成第一和第二共面栅叠层，分别调整第一和第二栅极堆叠的功函数，以获得第二栅极堆叠的较高功函数。其他实施例包括在栅极氧化物层上形成高k金属栅极的第一栅极堆叠和场板的第二栅极堆叠，在公共栅极氧化物上形成具有不同栅电极材料的第一和第二栅极堆叠，以及形成栅极堆叠彼此分离并具有不同的栅极电介质材料。

9. 发明申请

US20100315884A1 Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof 有权
标题翻译：利用冲击电离和隧穿的非易失性存储器及其制造方法
公开(公告)号：US20100315884A1
公开(公告)日：2010-12-16
申请号：US12456440
申请日：2009-06-16
申请人： Eng Huat Toh , Chung Foong Tan , Shyue Seng Tan , Jae Gon Lee , Elgin Quek
发明人： Eng Huat Toh , Chung Foong Tan , Shyue Seng Tan , Jae Gon Lee , Elgin Quek
IPC分类号： G11C16/04 , H01L29/788 , H01L21/336
CPC分类号： H01L29/7885 , G11C16/0408 , H01L29/42336 , H01L29/66825
摘要： A non-volatile memory device (and method of manufacture) is disclosed and structured to enable a write operation using an ionization impact process in a first portion of the device and a read operation using a tunneling process in a second portion of the device. The non-volatile memory device (1) increases hot carrier injection efficiency, (2) decreases power consumption, and (3) enables voltage and device scaling in the non-volatile memory devices.
摘要翻译：公开并构造了非易失性存储器件（和制造方法），以使得能够在器件的第一部分中使用电离冲击处理的写入操作以及在器件的第二部分中使用隧道工艺的读取操作。非易失性存储器件（1）增加了热载流子注入效率，（2）降低功耗，（3）使非易失性存储器件中的电压和器件缩放。

10. 发明授权

US09034711B2 LDMOS with two gate stacks having different work functions for improved breakdown voltage 有权
标题翻译： LDMOS具有两个栅极叠层，具有不同的功能，可提高击穿电压
公开(公告)号：US09034711B2
公开(公告)日：2015-05-19
申请号：US13046332
申请日：2011-03-11
申请人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
发明人： Eng Huat Toh , Jae Gon Lee , Chung Foong Tan , Elgin Quek
IPC分类号： H01L21/336 , H01L29/78 , H01L29/423 , H01L29/51 , H01L29/49 , H01L29/66
CPC分类号： H01L29/7816 , H01L29/42364 , H01L29/42368 , H01L29/42372 , H01L29/495 , H01L29/4958 , H01L29/4966 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545 , H01L29/66681
摘要： An LDMOS is formed with a second gate stack over the n− drift region, having a common gate electrode with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, the first and second gate stacks sharing a common gate electrode, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack with a first high-k dielectric and the second gate stack with a second high-k dielectric, and forming the first and second gate stacks with asymmetric dielectrics.
摘要翻译： LDMOS在n漂移区上形成有第二栅极堆叠，其具有与栅极堆叠相同的公共栅电极，并且具有比栅极堆叠更高的功函数。实施例包括形成第一导电类型的阱，具有由第二导电类型阱包围的源，在衬底中具有漏极，在衬底上在第一阱的一部分上形成第一和第二栅极叠层，第二阱，第一和第二栅极堆叠共享公共栅极电极，并且调谐第一和第二栅极堆叠的功函数以获得用于第二栅极堆叠的较高功函数。其他实施例包括用第一高k电介质形成第一栅极堆叠，以及用第二高k电介质形成第二栅极堆叠，以及用不对称电介质形成第一和第二栅极堆叠。

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