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1. 发明专利

JPH02216819A SEPARATION VALVE 失效
公开(公告)号：JPH02216819A
公开(公告)日：1990-08-29
申请号：JP8669989
申请日：1989-04-05
申请人： ENERGY CONVERSION DEVICES INC
发明人： DEBITSUTO EE GATSUTASO , MASATSUGU IZU
IPC分类号： H01L21/302 , C23C14/56 , C23C16/54 , F16J15/16 , H01L21/205 , H01L21/3065 , H01L21/31 , H01L31/04
摘要： PURPOSE: To manufacture a high-performance semiconductor device in which layers having different chemical compositions are homogeneously formed and joined with each other in excellent states by changing the course of substrates continuously passed through a plurality of chambers and the arrangement of the chambers in accordance with the alteration of the course. CONSTITUTION: A supply reel 12 and take-up reel 16 constitute a drive means and intermediate idler reels 20, 22, 24, and 26 constitute a guide means. When such a variable as the impurity, the other component of a reactive gas, the arranging order of chambers between a supply section 14 and take-up section 18 is changed, the arrangement of layers in the cross section of a semiconductor also changes accordingly. In such a continuous vapor-deposition method that an intrinsic layer (I-type layer) vapor-deposition chamber 30 is considerably longer than a P- or N-type layer vapor-deposition chamber 28 or 32, a film substrate 10 advances to the take-up reel 16 from the supply reel 12 at a substantially constant speed. Since an N-type layer, an intrinsic layer, and a P-type are continuously vapordeposited on various parts of the advancing film substrate 10, the thickness of the layer which is the function of the time spend in an arbitrary chamber decides the relative length of the chamber.

2. 发明专利

JPS57117992A Film for forming picture with improved passivation layer 失效
标题翻译：用改进的钝化层形成图像的电影
公开(公告)号：JPS57117992A
公开(公告)日：1982-07-22
申请号：JP12182680
申请日：1980-09-04
申请人： Energy Conversion Devices Inc
发明人： MASATSUGU IZU , BUINSENTO DEIBITSUDO KIYANNERA
IPC分类号： B41M5/26 , G03C1/705 , G03C1/725 , G03C5/56
CPC分类号： G03C5/56 , G03C1/705

3. 发明专利

JPS5743413A Semiconductor element and method of producing same 失效
标题翻译：半导体元件及其制造方法
公开(公告)号：JPS5743413A
公开(公告)日：1982-03-11
申请号：JP7335681
申请日：1981-05-15
申请人： Energy Conversion Devices Inc
发明人： SUTANFUOODO AARU OBUSHINSUKII , BINSENTO DEII KIYANERA , MASATSUGU IZU
IPC分类号： H01L31/04 , C23C16/517 , C23C16/54 , H01L21/205 , H01L27/142 , H01L31/16 , H01L31/18
CPC分类号： C23C16/54 , C23C16/517 , H01L31/046 , H01L31/18 , Y02E10/50

4. 发明专利

JPS5446049A HIGH SENSITIVE IMAGE FORMING FILM * PRODUCTION THEREOF AND FORMING OF IMAGE BY USING SAID FILM 失效
公开(公告)号：JPS5446049A
公开(公告)日：1979-04-11
申请号：JP10239378
申请日：1978-08-24
申请人： ENERGY CONVERSION DEVICES INC
发明人： MASATSUGU IZU , BUINSENTO DEIBITSUDO KIYANNERA
IPC分类号： B41M5/28 , B41M5/36 , G03C1/705 , G03C5/56

5. 发明专利

JPH0572756B2 失效
公开(公告)号：JPH0572756B2
公开(公告)日：1993-10-12
申请号：JP19692883
申请日：1983-10-20
申请人： ENERGY CONVERSION DEVICES INC , CANON KK
发明人： MASATSUGU IZU , UINSENTO DEIUITSUDO KYANNERA
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20

6. 发明专利

JPH02168676A METHOD AND APPARATUS FOR 失效
公开(公告)号：JPH02168676A
公开(公告)日：1990-06-28
申请号：JP15207489
申请日：1981-05-15
申请人： ENERGY CONVERSION DEVICES INC
发明人： SUTANFUOODO AARU OBUSHINSUKII , BINSENTO DEII KIYANERA , MASATSUGU IZU
IPC分类号： H01L31/04 , C23C16/517 , C23C16/54 , H01L21/205 , H01L27/142 , H01L31/046 , H01L31/16 , H01L31/18
摘要： PURPOSE: To improve photoelectric converting efficiency by making an N-type semiconductor layer an amorphous silicon layer and making a P-type semiconductor layer an amorphous silicon layer including crystallites of silicon. CONSTITUTION: In a photovoltaic element with an N-type and P-type semiconductor layers as semiconductor layers, the N-type semiconductor layer is an amorphous silicon layer and the P-type semiconductor layer is an amorphous silicon layer including crystallites of silicon. Namely, as the P-type semiconductor layer is the amorphous silicon layer including crystallites of silicon, resistivity is reduced, namely the conductivity is increased, and the mobility of positive hole is increased to improve the collecting efficiency of light generating carriers. In addition, the band gas is kept large and desirably corresponds to the sunlight spectrum to eliminate bad influence on the photon absorption in a photoactive and photosensitive layer. Thereby, photoelectric converting efficiency and energy converting efficiency are improved.

7. 发明专利

JPS6122622A Method and device for producing photovoltaic power panel 失效
标题翻译：用于生产光伏电源板的方法和装置
公开(公告)号：JPS6122622A
公开(公告)日：1986-01-31
申请号：JP7752585
申请日：1985-04-11
申请人： Energy Conversion Devices Inc
发明人： SUTANFUOODO AARU OBUSHINSUKII , BINSENTO DEII KIYANERA , MASATSUGU IZU
IPC分类号： H01L31/04 , C23C16/517 , C23C16/54 , H01L21/205 , H01L27/142 , H01L31/16 , H01L31/18
CPC分类号： C23C16/54 , C23C16/517 , H01L31/046 , H01L31/18 , Y02E10/50

8. 发明专利

JPS60211883A Electrically plated substrate 失效
标题翻译：电镀基材
公开(公告)号：JPS60211883A
公开(公告)日：1985-10-24
申请号：JP4632685
申请日：1985-03-08
申请人： Energy Conversion Devices Inc
发明人： JIYOZEFU JIEI HANAKU , PUREEMU NASU , MASATSUGU IZU , JIEIMUZU YANGU
IPC分类号： H01L31/042 , C25D1/04 , H01L21/288 , H01L27/142 , H01L31/0392 , H01L31/04 , H01L31/052
CPC分类号： C25D1/04 , H01L21/2885 , H01L31/03921 , H01L31/046 , H01L31/0463 , H01L31/0547 , Y02E10/52

9. 发明专利

JPS59155123A Glow discharge depositing device 失效
标题翻译：玻璃放电沉积装置
公开(公告)号：JPS59155123A
公开(公告)日：1984-09-04
申请号：JP24182983
申请日：1983-12-21
申请人： Energy Conversion Devices Inc
发明人： PUREEMU NASU , MASATSUGU IZU
IPC分类号： H01L31/04 , C23C16/509 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32018 , C23C16/509

10. 发明专利

JPS5999780A LARGE AREA PHOTOCELL AND METHOD OF PRODUCING SAME 失效
公开(公告)号：JPS5999780A
公开(公告)日：1984-06-08
申请号：JP20977083
申请日：1983-11-08
申请人： ENERGY CONVERSION DEVICES INC
发明人： MASATSUGU IZU , PUREEMU NASU
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0216 , H01L31/042 , H01L31/20

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