会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • Light emitting diode die with at least one phosphor layer and method for forming the same
    • 具有至少一个荧光体层的发光二极管管芯及其形成方法
    • US20070145884A1
    • 2007-06-28
    • US11509509
    • 2006-08-22
    • Enboa WuTun-Yen Kan
    • Enboa WuTun-Yen Kan
    • H01J1/62H01J63/04
    • H05B33/10
    • The present application discloses a light emitting diode die with at least one phosphor layer, comprising a substrate having a first surface and a second surface opposing to the first surface; a light-emitting structure being formed on the first surface and emitting a primary light with a specific wavelength while being driven by a voltage wherein the primary light is capable of passing through the substrate; and, at least one phosphor layer with plate-shaped structure formed on the second surface, wherein at least one phosphor layer comprises at least one type of organic material and at least one type of phosphor substance that absorbs and converts part of the primary light to thereby emit at least a secondary light with a different wavelength from the specific wavelength. In addition, the present invention discloses methods for forming a light emitting diode die with at least one phosphor layer.
    • 本申请公开了一种具有至少一个磷光体层的发光二极管管芯,其包括具有与第一表面相对的第一表面和第二表面的衬底; 发光结构形成在第一表面上并发射具有特定波长的初级光,同时被初级光能够通过基板的电压驱动; 并且至少一个具有板状结构的磷光体层形成在第二表面上,其中至少一个磷光体层包括至少一种类型的有机材料和至少一种类型的磷光体物质,其吸收并转换部分原始光, 从而发射至少具有与特定波长不同波长的二次光。 此外,本发明公开了用于形成具有至少一个荧光体层的发光二极管管芯的方法。
    • 7. 发明授权
    • Omni reflective optics for wide angle emission LED light bulb
    • 全向反射光学用于广角LED灯泡
    • US08672512B2
    • 2014-03-18
    • US13426627
    • 2012-03-22
    • Li ZhouKai Chiu WuEnboa Wu
    • Li ZhouKai Chiu WuEnboa Wu
    • F21V14/00
    • F21V29/505F21K9/232F21K9/60F21K9/61F21K9/64F21V3/00F21V3/063F21V3/12F21V13/02F21V29/773F21V29/86F21Y2115/10
    • A structure is provided to create an efficient light pattern conversion from a narrow angular light beam pattern of a light emitting source to a wide angle light intensity distribution for an omnidirectional lighting assembly. A heat conductive substrate includes an LED array with at least one central and at least one surrounding LED. A hollow light diverting component is positioned over the LED array; a central LED is within the hollow component while surrounding LEDs are positioned outside. Light emitted by the central LED is reflected off inner surfaces of the hollow component to be discharged from an upper opening. The outer component surface is configured to reflect light from the surrounding LEDs in azimuthal and circumferential directions towards a region below the upper opening. In this manner, plural LEDs are used to form a wide angle emission pattern suitable for use in conventional light bulb replacement devices.
    • 提供一种结构以产生从发光源的窄角度光束图案到全向照明组件的广角光强度分布的有效的光图案转换。 导热基板包括具有至少一个中心和至少一个周围LED的LED阵列。 中空光转向部件位于LED阵列上方; 中央LED在中空部件内,而周围的LED位于外部。 由中央LED发射的光从中空部件的内表面反射,从上部开口排出。 外部部件表面被配置为将方位角和圆周方向上的周围LED的光反射到上部开口下方的区域。 以这种方式,使用多个LED来形成适用于常规灯泡更换装置的广角发射图案。
    • 8. 发明申请
    • Method for wafer level package of sensor chip
    • 传感器芯片晶圆级封装方法
    • US20070224728A1
    • 2007-09-27
    • US11385882
    • 2006-03-22
    • Enboa WuRou-Ching Yang
    • Enboa WuRou-Ching Yang
    • H01L21/00
    • H01L27/14618H01L23/3114H01L2924/0002H01L2924/00
    • A method for wafer level package (WLP) of sensor chips is provided, including the steps of: providing a wafer, the wafer including a plurality of die regions, each the die region on a first surface of the wafer comprising an active area and a pad surrounding the active area; bounding a transparent protective layer to the first surface of the wafer; forming a stress buffer on a second surface of the wafer; using etching or laser drill to form a via hole at the location between two neighboring die regions through the stress buffer and the wafer to expose the pad or a conductive line between two neighboring pads; and forming a plurality of bump electrodes on the stress buffer for electrical connection to the pads through the via holes. The method can prevent pollution of the die, improve the convenience of package, reduce the manufacture cost, increase the package reliability, and solve the stress problem caused by attaching the die directly to the PCB.
    • 提供了一种用于传感器芯片的晶片级封装(WLP)的方法,包括以下步骤:提供晶片,晶片包括多个管芯区域,每个管芯区域在晶片的第一表面上包括有源区和 围绕活动区域的垫; 将透明保护层限定在晶片的第一表面上; 在所述晶片的第二表面上形成应力缓冲器; 使用蚀刻或激光钻孔在通过应力缓冲器和晶片的两个相邻管芯区域之间的位置处形成通孔,以暴露焊盘或两个相邻焊盘之间的导电线; 以及在所述应力缓冲器上形成多个凸起电极,以通过所述通孔与所述焊盘电连接。 该方法可以防止模具污染,提高包装的便利性,降低制造成本,提高包装可靠性,解决将模具直接连接到PCB所引起的应力问题。
    • 9. 发明授权
    • High reliability high voltage vertical LED arrays
    • 高可靠性高压垂直LED阵列
    • US08558254B1
    • 2013-10-15
    • US13688250
    • 2012-11-29
    • Wing Yan HoEnboa Wu
    • Wing Yan HoEnboa Wu
    • H01L29/18
    • H01L25/0753H01L33/42H01L33/62H01L2924/0002H05B33/0824H01L2924/00
    • Improved arrays of high voltage vertical-emitting LEDs that generate substantially lower heat than conventional LED arrays are provided. In particular, the present invention provides an array of high-voltage vertical LEDs each of which includes a first electrode positioned on a light-emitting face and a second electrode. A conductive matrix surrounds each LED and electrically communicates with each of the electrodes while an electrically-insulating material is positioned between adjacent diodes such that a first electrical current path is defined between the second and first electrodes through each diode. An isolating material is positioned in the conductive matrix between adjacent LEDs to isolate the adjacent second electrodes from one another. Further positioned between adjacent diodes is a material capable of permanently lowering its resistance to provide an alternate electrical pathway following a failure of an individual LED. High reliability high voltage vertical LED arrays are thereby provided.
    • 提供了改进的高压垂直发射LED阵列,其产生比常规LED阵列显着更低的热量。 特别地,本发明提供一种高压垂直LED阵列,每个高压LED包括位于发光面上的第一电极和第二电极。 导电矩阵围绕每个LED并且与每个电极电连通,而电绝缘材料位于相邻二极管之间,使得通过每个二极管在第二和第一电极之间限定第一电流路径。 绝缘材料位于相邻LED之间的导电矩阵中,以将相邻的第二电极彼此隔离。 相邻二极管之间的进一步定位是能够永久地降低其电阻以提供单独LED的故障之后的备选电路的材料。 从而提供高可靠性的高压垂直LED阵列。