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1. 发明申请

US20130002363A1 OUT-OF-PLANE RESONATOR 有权
标题翻译：超平面谐振器
公开(公告)号：US20130002363A1
公开(公告)日：2013-01-03
申请号：US13173449
申请日：2011-06-30
申请人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03B5/30
CPC分类号： H03H9/2457 , H03H9/2452 , H03H2009/02299 , H03H2009/02511
摘要： A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.
摘要翻译：微机电系统（MEMS）装置包括锚定到基板的谐振器。谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。谐振器包括锚定到基板的第一电极。第一电极包括第一电极的释放部分的第二应变梯度。第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。谐振器可以包括锚定到衬底的谐振器锚。第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。

2. 发明申请

US20120329255A1 OUT-OF-PLANE MEMS RESONATOR WITH STATIC OUT-OF-PLANE DEFLECTION 有权
标题翻译：具有静态非平面偏移的平面外平面MEMS谐振器
公开(公告)号：US20120329255A1
公开(公告)日：2012-12-27
申请号：US13599240
申请日：2012-08-30
申请人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
IPC分类号： H01L21/20
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.
摘要翻译：形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。该方法包括在衬底上形成结构层。结构层围绕电极的周边设置并具有残余膜应力梯度。该方法包括释放结构层以形成耦合到衬底的谐振器。残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。

3. 发明授权

US08258893B2 Out-of-plane MEMS resonator with static out-of-plane deflection 有权
标题翻译：具有静态超平面偏转的平面外的MEMS谐振器
公开(公告)号：US08258893B2
公开(公告)日：2012-09-04
申请号：US13173432
申请日：2011-06-30
申请人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
IPC分类号： H03H9/24 , H03H9/125 , H03H9/46
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.
摘要翻译：微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。

4. 发明授权

US07956517B1 MEMS structure having a stress inverter temperature-compensated resonator member 有权
标题翻译：具有应力逆变器温度补偿谐振器构件的MEMS结构
公开(公告)号：US07956517B1
公开(公告)日：2011-06-07
申请号：US12204713
申请日：2008-09-04
申请人： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L23/34
CPC分类号： H03H3/0076 , B81B3/0072 , B81B2201/0271 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02496 , H03H2009/02503
摘要： A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
摘要翻译：描述了具有温度补偿谐振器元件的MEMS结构。 MEMS结构包括与衬底耦合的不对称应力逆变器部件。谐振器构件容纳在不对称应力逆变器构件中并悬置在衬底上。不对称应力逆变器构件用于通过响应于温度变化在谐振器构件上引起应力来改变谐振器构件的频率的热系数。

5. 发明授权

US08674775B2 Out-of-plane resonator 有权
标题翻译：平面外谐振器
公开(公告)号：US08674775B2
公开(公告)日：2014-03-18
申请号：US13173449
申请日：2011-06-30
申请人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03B5/30
CPC分类号： H03H9/2457 , H03H9/2452 , H03H2009/02299 , H03H2009/02511
摘要： A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.
摘要翻译：微机电系统（MEMS）装置包括锚定到基板的谐振器。谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。谐振器包括锚定到基板的第一电极。第一电极包括第一电极的释放部分的第二应变梯度。第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。谐振器可以包括锚定到衬底的谐振器锚。第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。

6. 发明授权

US08629739B2 Out-of plane MEMS resonator with static out-of-plane deflection 有权
标题翻译：具有静态超平面偏转的平面外的MEMS谐振器
公开(公告)号：US08629739B2
公开(公告)日：2014-01-14
申请号：US13599240
申请日：2012-08-30
申请人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
IPC分类号： H03H9/24 , H03H3/007 , H01L21/00
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.
摘要翻译：形成微机电系统（MEMS）器件的方法包括在衬底上形成电极。该方法包括在衬底上形成结构层。结构层围绕电极的周边设置并具有残余膜应力梯度。该方法包括释放结构层以形成耦合到衬底的谐振器。残余膜应力梯度将谐振器的第一部分偏离由电极表面限定的平面。

7. 发明申请

US20110260810A1 OUT-OF-PLANE MEMS RESONATOR WITH STATIC OUT-OF-PLANE DEFLECTION 有权
标题翻译：具有静态非平面偏移的平面外平面MEMS谐振器
公开(公告)号：US20110260810A1
公开(公告)日：2011-10-27
申请号：US13173432
申请日：2011-06-30
申请人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
发明人： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
IPC分类号： H03H9/24
CPC分类号： H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
摘要： A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.
摘要翻译：微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。

8. 发明授权

US08669831B2 Method for temperature compensation in MEMS resonators with isolated regions of distinct material 有权
标题翻译：具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US08669831B2
公开(公告)日：2014-03-11
申请号：US12950519
申请日：2010-11-19
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03H9/00 , H03H9/24 , H03H9/21 , H03H3/013
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

9. 发明申请

US20100093125A1 METHOD FOR TEMPERATURE COMPENSATION IN MEMS RESONATORS WITH ISOLATED REGIONS OF DISTINCT MATERIAL 有权
标题翻译：具有隔离材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US20100093125A1
公开(公告)日：2010-04-15
申请号：US12638919
申请日：2009-12-15
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H01L21/30
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

10. 发明授权

US07639104B1 Method for temperature compensation in MEMS resonators with isolated regions of distinct material 有权
标题翻译：具有不同材料隔离区域的MEMS谐振器中的温度补偿方法
公开(公告)号：US07639104B1
公开(公告)日：2009-12-29
申请号：US11716115
申请日：2007-03-09
申请人： Emmanuel P. Quevy , David H. Bernstein
发明人： Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03H9/00
CPC分类号： B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
摘要： MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material. In a specific embodiment, the shape, dimensions, location and arrangement of a second material comprising silicon dioxide is tailored so that the resonator comprising a first material of SiGe will have a TCF of a much lower magnitude than that of either a homogeneous SiGe or homogeneous silicon dioxide resonator.
摘要翻译：包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。第一种材料具有与第二种材料不同的杨氏模量温度系数。在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。在一个这样的实施例中，第一材料是半导体，第二材料是电介质。在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。在具体实施例中，包括二氧化硅的第二材料的形状，尺寸，位置和布置被定制，使得包括SiGe的第一材料的谐振器将具有比均匀SiGe或均质SiGe的TCF低得多的TCF 二氧化硅谐振器。

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