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1. 发明申请

US20110248602A1 ACOUSTIC RESONATOR COMPRISING AN ELECTRET AND METHOD OF PRODUCING SAID RESONATOR, APPLICATION TO SWITCHABLE COUPLED RESONATOR FILTERS 有权
标题翻译：包含电气的声学谐振器和产生均匀共振器的方法，应用于可切换的耦合谐振器滤波器
公开(公告)号：US20110248602A1
公开(公告)日：2011-10-13
申请号：US12975974
申请日：2010-12-22
申请人： Emmanuel DEFAY , Sebastien Boisseau , Ghislain Despesse , Brice Ivira , Alexandre Reinhardt
发明人： Emmanuel DEFAY , Sebastien Boisseau , Ghislain Despesse , Brice Ivira , Alexandre Reinhardt
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H9/02015 , H03H3/04 , H03H9/02031 , H03H9/173 , H03H9/175 , H03H9/583 , H03H9/584 , H03H9/585 , H03H2003/0414 , H03H2009/02196 , Y10T29/42
摘要： Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.
摘要翻译：包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。确定该电场的强度以将谐振器的谐振频率偏移所需的值。压电层可以包含电荷本身构成驻极体层。

2. 发明申请

US20130106243A1 Acoustic Wave Electromechanical Device Comprising a Transduction Region and an Extended Cavity 有权
标题翻译：包括传导区和扩展腔的声波机电装置
公开(公告)号：US20130106243A1
公开(公告)日：2013-05-02
申请号：US13456026
申请日：2012-04-25
申请人： Alexandre REINHARDT , Emmanuel DEFAY , Francois PERRUCHOT
发明人： Alexandre REINHARDT , Emmanuel DEFAY , Francois PERRUCHOT
IPC分类号： H03H9/25
CPC分类号： H03H9/25 , H03H3/02 , H03H3/08 , H03H9/02228 , H03H9/02622 , H03H9/02637 , H03H9/02669 , H03H9/02763 , H03H9/02803 , H03H9/0542 , H03H9/17 , H03H9/542 , H03H9/6403 , H03H2009/02165
摘要： An electromechanical device having a resonator using acoustic waves propagating laterally within a piezoelectric plane resonant structure and electrodes on a face of said structure. The resonant structure comprises: a transduction region having a transduction length and generating acoustic waves; a free propagation region for the acoustic waves, adjacent to the transduction region and defined the plane of the transduction region; the resonant structure length being equal to an integer number of half-wavelengths, the resonance frequency of said resonator equaling the average propagation velocity of the wave within the structure divided by said wavelength, to adjust the quality factor of the resonator fixed by the length of the resonant structure and the coupling coefficient fixed by the ratio of the transduction length over the length of the resonant structure; the resonant structure defined by the assembly of the transduction region and the propagation region being laterally bounded by reflection regions.
摘要翻译：一种机电装置，其具有使用在压电平面共振结构内横向传播的声波和在所述结构的面上的电极的谐振器。谐振结构包括：具有转导长度并产生声波的转导区域; 用于声波的自由传播区域，邻近转导区域并限定换能区域的平面; 谐振结构长度等于半波长的整数，所述谐振器的谐振频率等于结构中的波的平均传播速度除以所述波长，以调整谐振器的质量因子固定的长度谐振结构和耦合系数由谐振结构长度上的换能长度比固定; 由转导区域和传播区域的组装限定的共振结构由反射区域横向界定。

3. 发明申请

US20110080069A1 PIEZOELECTRIC ACTUATION STRUCTURE INCLUDING AN INTEGRATED PIEZORESISTIVE STRAIN GAUGE AND ITS PRODUCTION METHOD 有权
标题翻译：包括一体化PIEZORESISTIVE应变计的压电致动结构及其生产方法
公开(公告)号：US20110080069A1
公开(公告)日：2011-04-07
申请号：US12898292
申请日：2010-10-05
申请人： Matthieu CUEFF , Emmanuel DEFAY , François PERRUCHOT , Patrice REY
发明人： Matthieu CUEFF , Emmanuel DEFAY , François PERRUCHOT , Patrice REY
IPC分类号： H02N2/00 , H01L41/22
CPC分类号： H01L41/094 , H01L41/0825 , H01L41/29 , H01L41/318 , H01L41/332 , Y10T29/42
摘要： The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure.
摘要翻译：本发明涉及一种压电致动结构，其包括至少一个应变计和至少一个致动器，其由布置在底部电极层和顶部电极层之间的至少一层压电材料层的衬底的表面上的堆叠产生，形成致动器的堆的至少一部分被布置在衬底中产生的腔的上方，其特征在于应变计是位于顶电极层和/或底电极层中的压阻计，所述层包括电极不连续使得可以制造所述压阻计。本发明还涉及这种结构的制造方法。

4. 发明申请

US20120007666A1 DEVICE FOR IMPEDANCE MATCHING A COMPONENT, COMPRISING A FILTER HAVING MATCHABLE IMPEDANCE, BASED ON A PEROVSKITE TYPE MATERIAL 有权
标题翻译：用于阻抗匹配的组件，包含具有匹配阻抗的过滤器，基于PEROVSKITE型材料
公开(公告)号：US20120007666A1
公开(公告)日：2012-01-12
申请号：US13173219
申请日：2011-06-30
申请人： Jean-Baptiste DAVID , Christophe BILLARD , Emmanuel DEFAY
发明人： Jean-Baptiste DAVID , Christophe BILLARD , Emmanuel DEFAY
IPC分类号： H04B1/10
CPC分类号： H03H9/02031 , H03H7/40
摘要： A device comprises at the input a first component (PA) having a first output impedance (Z1), at the output a second component (ANT) having a second input impedance (Z2), and an impedance-matching network between said first and second components. Because the first and/or the second impedance vary/varies, said impedance-matching network comprises a filter (Fadp), with an impedance that is matchable to the first and second impedances, located between said first and second components and comprising at least two acoustic wave coupled resonators. At least one of the resonators comprises a perovskite type material and means for applying a voltage to said resonator, which enable the permittivity and the impedance thereof to be varied.
摘要翻译：一种装置包括在输入端具有第一输出阻抗（Z1）的第一分量（PA），在输出处包括具有第二输入阻抗（Z2）的第二分量（ANT）和在所述第一和第二输出阻抗之间的阻抗匹配网络组件。由于第一和/或第二阻抗变化/变化，所述阻抗匹配网络包括滤波器（Fadp），其阻抗与第一和第二阻抗匹配，位于所述第一和第二组件之间，并且包括至少两个声波耦合谐振器。谐振器中的至少一个包括钙钛矿型材料和用于向所述谐振器施加电压的装置，其能够改变介电常数和阻抗。

5. 发明申请

US20110061215A1 PROCESS FOR FABRICATING AN OPTIMALLY-ACTUATING PIEZOELECTRIC MEMBRANE 有权
标题翻译：制造最佳实施压电膜的工艺
公开(公告)号：US20110061215A1
公开(公告)日：2011-03-17
申请号：US12881955
申请日：2010-09-14
申请人： Emmanuel DEFAY , Gwenaël LE RHUN
发明人： Emmanuel DEFAY , Gwenaël LE RHUN
IPC分类号： H01L41/22
CPC分类号： H01L41/0973 , B41J2/14233 , B41J2/161 , H01L41/047 , H01L41/053 , H01L41/25 , H01L41/29 , H01L41/314 , H01L41/317 , H01L41/318 , H01L41/43 , H01L41/47 , Y10T29/42 , Y10T29/49155 , Y10T29/49156 , Y10T29/49401
摘要： In a process for fabricating a membrane, including, on a substrate, a thin-film multilayer including a film of piezoelectric material placed between a top electrode film and a bottom electrode film and an elastic film supporting said piezoelectric film, the process includes: determining at least one concavity/convexity curvature of said membrane along an axis parallel to the plane of the films so that at least one inflection point is defined, said point allowing a first region and a second region, corresponding to a concave part and a convex part or vice versa, to be isolated; depositing, on the surface of the substrate, a thin-film multilayer including at least one film of piezoelectric material, one bottom electrode film and one top electrode film; and structuring at least one of the electrode films to define at least said first membrane region, in which an electric field perpendicular to the plane of the films may be applied, and at least said second region, in which an electric field parallel to the plane of the films may be applied.
摘要翻译：在制造膜的方法中，包括在基板上的包括放置在顶电极膜和底电极膜之间的压电材料膜的薄膜多层膜和支撑所述压电膜的弹性膜，所述方法包括：确定所述膜沿着平行于所述膜的平面的轴线的至少一个凹凸曲率，使得至少一个拐点被限定，所述点允许对应于凹部和凸部的第一区域和第二区域或反之亦然，被隔离; 在基板的表面上沉积包括至少一层压电材料薄膜，一个底部电极薄膜和一个顶部电极薄膜的薄膜多层膜; 并且构造至少一个所述电极膜以至少限定所述第一膜区域，其中可以施加垂直于所述膜的平面的电场，以及至少所述第二区域，其中平行于所述平面的电场的膜可以被应用。

6. 发明申请

US20120306322A1 Electrical Component Comprising a Material with a Perovskite Structure and Optimized Electrodes and Fabrication Process 有权
标题翻译：包含钙钛矿结构和优化电极的材料的电气部件和制造工艺
公开(公告)号：US20120306322A1
公开(公告)日：2012-12-06
申请号：US13481476
申请日：2012-05-25
申请人： Matthieu CUEFF , Emmanuel DEFAY , Gwenaël LE RHUN
发明人： Matthieu CUEFF , Emmanuel DEFAY , Gwenaël LE RHUN
IPC分类号： H01L41/04 , H01L41/24 , B05D5/12 , H01L41/047 , H01L41/18
CPC分类号： H01L41/29 , H01L41/0477 , H01L41/0478 , H01L41/0815
摘要： An electrical component comprises a lead-based perovskite crystal material layer between a lower electrode on the surface of a substrate and an upper electrode, characterized in that the lower electrode comprises a stabilizing first layer made of a first material and a seeding second layer made of a second material, the first and second materials having the same chemical composition but different structural parameters and/or densities. A process for fabricating a component is also provided, in which the material with a perovskite structure may be PZT with a (100) or (111) orientation.
摘要翻译：电气部件包括在基板表面的下电极和上电极之间的铅基钙钛矿晶体材料层，其特征在于，所述下电极包括由第一材料制成的稳定化第一层和由第二材料，第一和第二材料具有相同的化学组成但不同的结构参数和/或密度。还提供了一种制造组件的方法，其中具有钙钛矿结构的材料可以是具有（100）或（111）取向的PZT。

7. 发明申请

US20120145667A1 Process for Fabricating an Acoustic Wave Resonator Comprising a Suspended Membrane 有权
标题翻译：制造包含悬浮膜的声波谐振器的方法
公开(公告)号：US20120145667A1
公开(公告)日：2012-06-14
申请号：US13314844
申请日：2011-12-08
申请人： Bruno IMBERT , Emmanuel DEFAY , Chrystel DEGUET , Hubert MORICEAU , Mathieu PIJOLAT
发明人： Bruno IMBERT , Emmanuel DEFAY , Chrystel DEGUET , Hubert MORICEAU , Mathieu PIJOLAT
IPC分类号： B32B37/30 , C23F1/02 , B32B38/00 , B32B37/14
CPC分类号： H03H3/08 , B32B37/30 , H03H3/00 , H03H3/02 , H03H9/173 , H03H2003/021
摘要： A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.
摘要翻译：一种用于制造包括压电材料层的悬浮膜的声波谐振器的方法，包括以下步骤：在第一衬底的表面上制备包括至少一层第一压电材料的第一堆叠; 制备包括至少一个第二基底的第二叠层; 通过沉积或产生具有受控尺寸的颗粒的至少一个非结合起始区的产生，离开所述堆之一的表面在随后的结合步骤之前局部地赋予突出的纳米结构; 由于存在非结合起始区，所述两个堆叠的直接结合在堆叠之间产生泡罩; 以及使所述第一叠层变薄以至少消除所述第一衬底。

8. 发明申请

US20120056299A1 Integrated Capacitor Comprising an Electrically Insulating Layer Made of an Amorphous Perovskite-Type Material and Manufacturing Process 有权
标题翻译：包含由非晶态钙钛矿型材料制成的电绝缘层的集成电容器和制造工艺
公开(公告)号：US20120056299A1
公开(公告)日：2012-03-08
申请号：US13225451
申请日：2011-09-04
申请人： Emmanuel DEFAY , Gwenaël LE RHUN , Aurélien SUHM
发明人： Emmanuel DEFAY , Gwenaël LE RHUN , Aurélien SUHM
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/55 , H01L21/02197 , H01L21/02282 , H01L28/40 , H01L28/65
摘要： An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.
摘要翻译：集成电容器包括被称为基于钙钛矿型结晶材料的功能介电材料的介电材料层，位于衬底表面处的称为底部电极的至少一个第一电极和称为顶部电极的至少一个第二电极所述电极通过电绝缘材料层电绝缘，以允许顶部电极上的至少一个接触。电绝缘材料由钙钛矿型非晶介质材料制成，其介电常数低于钙钛矿型结晶材料的介电常数。接触由与电绝缘介电层水平面接触的蚀刻接触层形成，其表面平行于层的平面。还提供了一种用于制造这种集成电容器的工艺。

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