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1. 发明授权

US07268079B2 Method for fabricating a semiconductor having a field zone 有权
标题翻译：具有场区的半导体的制造方法
公开(公告)号：US07268079B2
公开(公告)日：2007-09-11
申请号：US11207525
申请日：2005-08-19
申请人： Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Reiner Barthelmess
发明人： Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Reiner Barthelmess
IPC分类号： H01L21/332
CPC分类号： H01L29/74 , H01L29/0619 , H01L29/7395
摘要： A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.
摘要翻译：一种制造半导体的方法以及具有半导体本体的半导体元件的至少一个第二半导体区域，该半导体元件具有第一半导体区域。通过蚀刻方法将布置在半导体主体的边缘区域中的至少一个场区的尺寸减小。在另一个实施例中，半导体主体在第一半导体区外部的部分被部分去除。然后在部分去除的区域中制造至少一个第二半导体区。

2. 发明申请

US20060051923A1 Method for fabricating field rings 有权
标题翻译：制造现场环的方法
公开(公告)号：US20060051923A1
公开(公告)日：2006-03-09
申请号：US11207525
申请日：2005-08-19
申请人： Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Reiner Barthelmess
发明人： Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Reiner Barthelmess
IPC分类号： H01L21/336
CPC分类号： H01L29/74 , H01L29/0619 , H01L29/7395
摘要： A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.
摘要翻译：一种制造半导体的方法以及具有半导体本体的半导体元件的至少一个第二半导体区域，该半导体元件具有第一半导体区域。通过蚀刻方法将布置在半导体主体的边缘区域中的至少一个场区的尺寸减小。在另一个实施例中，半导体主体在第一半导体区外部的部分被部分去除。然后在部分去除的区域中制造至少一个第二半导体区。

3. 发明授权

US07511353B2 Semiconductor diode and production method suitable therefor 有权
标题翻译：半导体二极管及其适用的生产方法
公开(公告)号：US07511353B2
公开(公告)日：2009-03-31
申请号：US10971572
申请日：2004-10-22
申请人： Anton Mauder , Frank Hille , Vytla Rajeev Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
发明人： Anton Mauder , Frank Hille , Vytla Rajeev Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
IPC分类号： H01L29/72
CPC分类号： H01L21/263 , H01L29/32 , H01L29/6609 , H01L29/861
摘要： A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).
摘要翻译：半导体二极管（30）具有设置在阳极（32）和阴极（33）之间的阳极（32），阴极（33）和半导体体积（31）。位于阴极（33）前方的半导体体积（31）的区域（34）内的电子迁移率和/或空穴迁移率相对于半导体体积（31）的其余部分减小。

4. 发明申请

US20050116249A1 Semiconductor diode and production method suitable therefor 有权
标题翻译：半导体二极管及其适用的生产方法
公开(公告)号：US20050116249A1
公开(公告)日：2005-06-02
申请号：US10971572
申请日：2004-10-22
申请人： Anton Mauder , Frank Hille , Vytla Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
发明人： Anton Mauder , Frank Hille , Vytla Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
IPC分类号： H01L21/329 , H01L29/32 , H01L29/861 , H01L21/00
CPC分类号： H01L21/263 , H01L29/32 , H01L29/6609 , H01L29/861
摘要： A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).
摘要翻译：半导体二极管（30）具有设置在阳极（32）和阴极（33）之间的阳极（32），阴极（33）和半导体体积（31）。位于阴极（33）前方的半导体体积（31）的区域（34）内的电子迁移率和/或空穴迁移率相对于半导体体积（31）的其余部分减小。

5. 发明授权

US07781842B2 Semiconductor device and method for producing it 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07781842B2
公开(公告)日：2010-08-24
申请号：US12112624
申请日：2008-04-30
申请人： Franz Hirler , Elmar Falck , Hans-Joachim Schulze
发明人： Franz Hirler , Elmar Falck , Hans-Joachim Schulze
IPC分类号： H01L27/07 , H01L29/08
CPC分类号： H01L29/7816 , H01L29/0619 , H01L29/0696 , H01L29/407 , H01L29/66681
摘要： A semiconductor device which has a semiconductor body and a method for producing it. At the semiconductor body, a first electrode which is electrically connected to a first near-surface zone of the semiconductor body and a second electrode which is electrically connected to a second zone of the semiconductor body are arranged. A drift section is arranged between the first and the second electrode. In the drift section, a coupling structure is provided for at least one field plate arranged in the drift section. The coupling structure has a floating first area doped complementarily to the drift section and a second area arranged in the first area. The second area forms a locally limited punch-through effect or an ohmic contact to the drift section, and the field plate is electrically connected at least to the second area.
摘要翻译：具有半导体本体的半导体器件及其制造方法。在半导体本体上，配置电连接到半导体主体的第一近表面区域的第一电极和与半导体本体的第二区域电连接的第二电极。漂移部分设置在第一和第二电极之间。在漂移部分中，为布置在漂移部分中的至少一个场板提供耦合结构。耦合结构具有与漂移部分互补地掺杂的浮置的第一区域和布置在第一区域中的第二区域。第二区域形成局部有限的穿通效应或者与漂移部分的欧姆接触，并且场板至少电连接到第二区域。

6. 发明授权

US07750428B2 Semiconductor device and method for producing it 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07750428B2
公开(公告)日：2010-07-06
申请号：US12112279
申请日：2008-04-30
申请人： Franz Hirler , Elmar Falck , Hans-Joachim Schulze
发明人： Franz Hirler , Elmar Falck , Hans-Joachim Schulze
IPC分类号： H01L29/739 , H01L29/78 , H01L29/423 , H01L21/76 , H01L21/58
CPC分类号： H01L29/8611 , H01L21/765 , H01L29/0619 , H01L29/0638 , H01L29/402 , H01L29/404 , H01L29/7395 , H01L29/7811
摘要： A semiconductor device with a field ring in an edge pattern of a semiconductor body with a central cell area and with field plate discharge pattern. The edge pattern exhibits at least one horizontal field plate which is arranged with one end over the field ring and with its other end on insulating layers towards the edge of the semiconductor body. A first ring-shaped area of a type of conduction doped complementary to a drift section material exhibits a field ring effect. A second highly doped ring-shaped area which contacts the one end of the horizontal field plate and forms a pn junction with the first ring-shaped area and which is arranged within the first area exhibits a locally limited punch-through effect or a resistive contact to the drift section material.
摘要翻译：一种半导体器件，具有具有中心单元区域和场板放电图案的半导体本体的边缘图案中的场环。边缘图案显示出至少一个水平场板，其一端设置在场环上，其另一端朝向半导体本体的边缘的绝缘层上。与漂移部分材料互补的导电掺杂类型的第一环形区域表现出场环效应。接触水平场板的一端并与第一环形区域形成pn结并且布置在第一区域内的第二高度掺杂的环形区域表现出局部有限的穿通效应或电阻接触到漂移段材料。

7. 发明授权

US07635909B2 Semiconductor diode and IGBT 有权
标题翻译：半导体二极管和IGBT
公开(公告)号：US07635909B2
公开(公告)日：2009-12-22
申请号：US11023040
申请日：2004-12-23
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
IPC分类号： H01L29/866 , H01L29/06
CPC分类号： H01L29/0834 , H01L29/7395 , H01L29/861
摘要： A semiconductor diode has an anode, a cathode and a semiconductor volume provided between anode and cathode. A plurality of semiconductor zones are formed in the semiconductor volume, which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode. The semiconductor zones are spaced apart from the cathode.
摘要翻译：半导体二极管具有阳极，阴极和设置在阳极和阴极之间的半导体体积。在半导体体积中形成多个半导体区域，这些半导体区域相对于它们的紧邻环境被反向掺杂，彼此间隔开并设置在阴极附近。半导体区域与阴极间隔开。

8. 发明申请

US20050230702A1 High-voltage diode with optimized turn-off method and corresponding optimization method 有权
标题翻译：具有优化关断方式的高压二极管及相应的优化方法
公开(公告)号：US20050230702A1
公开(公告)日：2005-10-20
申请号：US10999111
申请日：2004-11-29
申请人： Veli Kartal , Hans-Joachim Schulze , Anton Mauder , Elmar Falck
发明人： Veli Kartal , Hans-Joachim Schulze , Anton Mauder , Elmar Falck
IPC分类号： H01L29/32 , H01L29/36 , H01L29/861 , H01L29/24
CPC分类号： H01L21/263 , H01L29/32 , H01L29/36 , H01L29/8611
摘要： The invention realizes a high-voltage diode with a turn-off behavior that is optimized in a targeted manner. By means of an irradiation either only from the side of the n+-conducting cathode emitter (6) or from both sides, i.e. from the side of the n+-conducting cathode emitter (6) and from the side of the p+-conducting anode emitter (4), it is possible to obtain a soft recovery behavior of the component by means of a targeted setting of the lifetime of the charge carriers without in this case increasing the on-state losses.
摘要翻译：本发明实现了以目标方式优化的关断行为的高压二极管。通过仅从n + + / - 导电阴极发射器（6）的侧面或从两侧即即从n + 阴极发射极（6），并且从p + / - 导电阳极发射极（4）的一侧可以通过目标设定的寿命获得组件的软恢复行为在这种情况下，电荷载体增加了导通状态损耗。

9. 发明授权

US07696600B2 IGBT device and related device having robustness under extreme conditions 有权
标题翻译： IGBT器件及相关器件在极端条件下具有鲁棒性
公开(公告)号：US07696600B2
公开(公告)日：2010-04-13
申请号：US11713226
申请日：2007-03-02
申请人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
发明人： Anton Mauder , Hans-Joachim Schulze , Frank Pfirsch , Elmar Falck , Josef Lutz
IPC分类号： H01L29/10 , H01L29/72
CPC分类号： H01L29/0834 , H01L29/7395 , H01L29/861
摘要： A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.
摘要翻译： IGBT形式的半导体器件具有前侧触点，后侧触点和设置在前侧触点和后侧触点之间的半导体体。半导体体积包括用于空间地限定可以形成在半导体体积中的电场的场停止层。半导体体积还包括多个半导体区域，多个半导体区域彼此间隔开并且相对于相邻区域反向掺杂。多个半导体区域位于场停止层内。

10. 发明授权

US07233031B2 Vertical power semiconductor component 有权
标题翻译：垂直功率半导体元件
公开(公告)号：US07233031B2
公开(公告)日：2007-06-19
申请号：US10886007
申请日：2004-07-07
申请人： Anton Mauder , Holger Rüthing , Gerhard Miller , Hans Joachim Schulze , Josef Georg Bauer , Elmar Falck
发明人： Anton Mauder , Holger Rüthing , Gerhard Miller , Hans Joachim Schulze , Josef Georg Bauer , Elmar Falck
IPC分类号： H01L29/74
CPC分类号： H01L29/861 , H01L29/0834 , H01L29/402 , H01L29/404 , H01L29/417 , H01L29/41741 , H01L29/7395
摘要： A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.
摘要翻译：垂直功率半导体部件，例如二极管或IGBT，其中在衬底的背面形成有后侧发射极或阴极发射极，并且由此至少部分覆盖其的后侧金属层由事实上，在部件的边缘区域中，提供了用于减少从后侧发射器或阴极发射器进入所述边缘部分的电荷载流子注入的注入衰减装置。

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