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    • 6. 发明授权
    • Variable-capacitance diode element having wide capacitance variation
range
    • 具有宽电容变化范围的变容二极管元件
    • US5017950A
    • 1991-05-21
    • US466204
    • 1990-01-17
    • Takeshi Kasahara
    • Takeshi Kasahara
    • H01L29/93
    • H01L29/93
    • A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductvity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.S is reduced, so that the quality factor Q is enhanced.
    • 公开了一种变容二极管元件,其包括具有第一导电类型的外延层的第一导电类型的半导体衬底,设置在其主表面部分上,所述外延层具有比所述半导体衬底更高的电阻率; 所述第一导电类型的第一扩散层扩散在所述外延层中并且具有比所述外延层的电阻率低的电阻率; 由所述第一扩散层包围并具有比所述第一扩散层低的电阻率的第二导电类型的第二扩散层; 以及覆盖所述第一扩散层的主表面的暴露部分和所述扩散层的主表面的暴露部分的小扩散长度的第二导电类型的第三扩散层。 通过这样的结构,二极管元件的电容变化范围变宽,高频串联电阻RS减小,从而提高品质因数Q。
    • 7. 发明授权
    • Variable capacitance diode element having wide capacitance variation
range
    • 具有宽电容变化范围的可变电容二极管元件
    • US4987459A
    • 1991-01-22
    • US466244
    • 1990-01-17
    • Takeshi Kasahara
    • Takeshi Kasahara
    • H01L29/93
    • H01L29/93Y10S148/004Y10S257/913
    • A variable-capacitance diode element having a wide capacitance variation range is disclosed which comprises an epitaxial layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type; a diffusion layer of the first conductivity type which is formed in the epitaxial layer with a higher concentration than said epitaxial layer by means of ion implantation; at least one diffusion layer of a second conductivity type which is formed in the diffusion layer of the first conductivity type so as to define PN junction; and a first-conductivity type buried layer of a low resistivity which is formed the boundary portion between the semiconductor substrate and the epitaxial layer where a depletion layer reaches which occurs in response to a reverse bias voltage being applied to the PN junction, whereby the depletion layer is caused to extend to a maximum possible effect.
    • 公开了具有宽电容变化范围的变容二极管元件,其包括设置在第一导电类型的半导体衬底上的第一导电类型的外延层; 通过离子注入在所述外延层中形成的浓度比所述外延层高的第一导电类型的扩散层; 至少一个第二导电类型的扩散层,其形成在第一导电类型的扩散层中以限定PN结; 以及低电阻率的第一导电型掩埋层,其形成半导体衬底和外延层之间的边界部分,其中耗尽层到达其上,其响应于向PN结施加的反向偏置电压而发生,从而消耗 导致层扩展到最大可能的效果。