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1. 发明授权

US07092224B2 Magnetic tunnel effect type magnetic head, and method of producing same 失效
标题翻译：磁隧道效应型磁头及其制造方法
公开(公告)号：US07092224B2
公开(公告)日：2006-08-15
申请号：US11091040
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.
摘要翻译：一种磁隧道效应型磁头，包括形成在第一软磁性导电层上的第一软磁性导电层，该第一软磁性导电层提供下部屏蔽层24，金属氧化物层25和第一非磁性导电层，以提供较低的间隙层26，形成在第一非磁性导电层上以提供磁性隧道结元件27的磁性隧道结层34，形成在磁性隧道结层34上以提供上间隙层28的第二非磁性导电层; 以及形成在第二非磁性导电层上以提供上屏蔽层29的第二软磁导电层，下间隙层26中的金属氧化物层25形成在至少磁性隧道结层27下面。

2. 发明申请

US20050168884A1 Magnetic tunnel effect type magnetic head, and method of producing same 失效
标题翻译：磁隧道效应型磁头及其制造方法
公开(公告)号：US20050168884A1
公开(公告)日：2005-08-04
申请号：US11091084
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the:magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.
摘要翻译：一种磁隧道效应型磁头，包括形成在第一软磁性导电层上的第一软磁性导电层，该第一软磁性导电层提供下部屏蔽层24，金属氧化物层25和第一非磁性导电层，以提供较低的间隙层26，形成在第一非磁性导电层上以提供磁性隧道结元件27的磁性隧道结层34，形成在磁性隧道结层34上以提供上间隙层28的第二非磁性导电层; 以及形成在第二非磁性导电层上以提供上屏蔽层29的第二软磁导电层，下间隙层26中的金属氧化物层25形成在至少磁性隧道结层27下面。

3. 发明授权

US06678126B2 Magnetoresistance-effect magnetic head 失效
标题翻译：磁阻效应磁头
公开(公告)号：US06678126B2
公开(公告)日：2004-01-13
申请号：US10046501
申请日：2001-10-19
申请人： Toru Katakura , Takuji Matsuo , Eiji Nakashio , Junichi Sugawara , Seiji Onoe
发明人： Toru Katakura , Takuji Matsuo , Eiji Nakashio , Junichi Sugawara , Seiji Onoe
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3916 , G11B2005/3996
摘要： The part of an MR element 25 which lies close to a medium-facing surface 10a overlaps that part of a flux-guiding element 24 which lies remote from the medium-facing surface 10a, with a second gap film 23b interposed between the elements 24 and 25. Further, the MR element 25 overlaps the flux-guiding element 24 for a distance that falls within a range of 15 to 25% of the length of the MR height of the element 25 as measured in a direction perpendicular to the medium-facing surface 10a.
摘要翻译：靠近中间面10a的MR元件25的部分与远离中介面10a的磁通引导元件24的一部分重叠，第二间隙膜23b置于元件24和此外，MR元件25与磁通引导元件24重叠一段距离，该距离落在元件25的MR高度的长度的15至25％的范围内，在与中间面向垂直的方向上测量表面10a。

4. 发明申请

US20050168883A1 Magnetic tunnel effect type magnetic head, and method of producing same 失效
标题翻译：磁隧道效应型磁头及其制造方法
公开(公告)号：US20050168883A1
公开(公告)日：2005-08-04
申请号：US11091040
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.
摘要翻译：一种磁隧道效应型磁头，包括形成在第一软磁性导电层上的第一软磁性导电层，该第一软磁性导电层提供下部屏蔽层24，金属氧化物层25和第一非磁性导电层，以提供较低的间隙层26，形成在第一非磁性导电层上以提供磁性隧道结元件27的磁性隧道结层34，形成在磁性隧道结层34上以提供上间隙层28的第二非磁性导电层; 以及形成在第二非磁性导电层上以提供上屏蔽层29的第二软磁导电层，下间隙层26中的金属氧化物层25形成在至少磁性隧道结层27下面。

5. 发明授权

US06873502B2 Magnetic tunnel effect type magnetic head, and method of producing same 失效
标题翻译：磁隧道效应型磁头及其制造方法
公开(公告)号：US06873502B2
公开(公告)日：2005-03-29
申请号：US09898259
申请日：2001-07-03
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , H01L43/12 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.
摘要翻译：一种磁隧道效应型磁头，包括形成在第一软磁性导电层上的第一软磁性导电层，该第一软磁性导电层提供下部屏蔽层24，金属氧化物层25和第一非磁性导电层，以提供较低的间隙层26，形成在第一非磁性导电层上以提供磁性隧道结元件27的磁性隧道结层34，形成在磁性隧道结层34上以提供上间隙层28的第二非磁性导电层; 以及形成在第二非磁性导电层上以提供上屏蔽层29的第二软磁导电层，下间隙层26中的金属氧化物层25形成在至少磁性隧道结层27下面。

6. 发明授权

US07092225B2 Magnetic tunnel effect type magnetic head, and method of producing same 失效
公开(公告)号：US07092225B2
公开(公告)日：2006-08-15
申请号：US11091084
申请日：2005-03-28
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara , Toru Katakura
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer 24, a metal oxide layer 25 and a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer 26, a magnetic tunnel junction layer 34 formed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element 27, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layer 34 to provide an upper gap layer 28; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer 29, the metal oxide layer 25 in the lower gap layer 26 being formed beneath at least the magnetic tunnel junction layer 27.

7. 发明授权

US07511928B2 Magnetic tunnel effect type magnetic head, and recorder/player 有权
公开(公告)号：US07511928B2
公开(公告)日：2009-03-31
申请号：US11158117
申请日：2005-06-20
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： In a magnetic tunnel effect type magnetic head 20 having a magnetic tunnel junction element 26 sandwiched with conductive gap layers 25 and 27 between a pair of magnetic shielding layers 24 and 28, the conductive gap layers 25 and 27 are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head 20 can have an improved face opposite to a magnetic recording medium.

8. 发明授权

US07057860B2 Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element, and recorder/player 有权
标题翻译：具有磁性隧道结元件的磁隧道效应型磁头和记录器/播放器
公开(公告)号：US07057860B2
公开(公告)日：2006-06-06
申请号：US10769396
申请日：2004-01-30
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： In a magnetic tunnel effect type magnetic head 20 having a magnetic tunnel junction element 26 sandwiched with conductive gap layers 25 and 27 between a pair of magnetic shielding layers 24 and 28, the conductive gap layers 25 and 27 are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head 20 can have an improved face opposite to a magnetic recording medium.
摘要翻译：在具有被导电间隙层25和27夹在一对磁屏蔽层24和28之间的磁性隧道结元件26的磁隧道效应型磁头20中，导电间隙层25和27由至少一个非磁性金属含有选自Ta，Ti，Cr，W，Mo，V，Nb和Zr的金属元素的层。因此，磁头20可以具有与磁记录介质相对的改进的面。

9. 发明授权

US06704178B2 Multichannel magnetic head using magnetoresistive effect 失效
标题翻译：多通道磁头采用磁阻效应
公开(公告)号：US06704178B2
公开(公告)日：2004-03-09
申请号：US10092911
申请日：2002-03-07
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3909 , G11B5/3948 , G11B5/3967
摘要： A multichannel magnetic head utilizing the magnetoresistive effect comprises a plurality of magnetoresistive effect type reproducing magnetic head elements arrayed between a first and second magnetic shield and electrodes wherein the reproducing magnetic head elements are arrayed in parallel on at least the first magnetic shield and electrode. Electrodes on one side are constructed commonly by the first magnetic shield and led out as a single common terminal decreasing the number of terminals. Therefore, the number of the terminals in the multichannel magnetic head using the magnetoresistive effect can be decreased, the multichannel magnetic head can be miniaturized, the occurrence of a short-circuit between the terminals or between the leads can be removed, the occurrence of fluctuations of element characteristics can be removed, the multichannel magnetic head using the magnetoresistive effect can become highly reliable and a yield of the multichannel magnetic head using the magnetoresistive effect can be improved.
摘要翻译：利用磁阻效应的多通道磁头包括排列在第一和第二磁屏蔽之间的多个磁阻效应型再现磁头元件和电极，其中再生磁头元件至少在第一磁屏蔽和电极上平行排列。一方面的电极通常由第一磁屏蔽构成，并作为单个公共端引出，减少端子数量。因此，可以减少使用磁阻效应的多通道磁头中的端子数量，可以使多通道磁头小型化，能够消除端子之间或引线之间的短路的发生，发生波动可以去除元件特性，使用磁阻效应的多通道磁头可以变得高可靠性，并且可以提高使用磁阻效应的多通道磁头的产量。

10. 发明授权

US06909584B2 Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element sandwiched with conductive gap layers between a pair of magnetic shielding layers 有权
标题翻译：磁隧道效应型磁头，其具有夹在一对磁屏蔽层之间的导电间隙层的磁性隧道结元件
公开(公告)号：US06909584B2
公开(公告)日：2005-06-21
申请号：US09897236
申请日：2001-07-02
申请人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
发明人： Eiji Nakashio , Seiji Onoe , Junichi Sugawara
IPC分类号： G01R33/09 , G11B5/39 , G11B5/40 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： In a magnetic tunnel effect type magnetic head (20) having a magnetic tunnel junction element (26) sandwiched with conductive gap layers (25) and (27) between a pair of magnetic shielding layers (24) and (28), the conductive gap layers (25) and (27) are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head (20) can have an improved face opposite to a magnetic recording medium.
摘要翻译：在具有夹在一对磁屏蔽层（24）和（28）之间的导电间隙层（25）和（27）的磁性隧道结元件（26）的磁隧道效应型磁头（20）中，导电间隙层（25）和（27）由至少一个含有选自Ta，Ti，Cr，W，Mo，V，Nb和Zr的金属元素的非磁性金属层形成。因此，磁头（20）可以具有与磁记录介质相对的改进面。

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