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    • 10. 发明授权
    • Semiconductor device assembly having a stress-relieving buffer layer
    • 具有应力消除缓冲层的半导体器件组件
    • US07875972B2
    • 2011-01-25
    • US12491517
    • 2009-06-25
    • Virendra R. JadhavKamal K. SikkaJiantao Zheng
    • Virendra R. JadhavKamal K. SikkaJiantao Zheng
    • H01L23/34
    • H01L23/3735H01L2224/73204H01L2224/73253H01L2224/83951
    • Disclosed is a multilayer thermal interface material which includes a first layer of metallic thermal interface material, a buffer layer and preferably a second layer of thermal interface material which may be metallic or nonmetallic. The multilayer thermal interface material is used in conjunction with a semiconductor device assembly of a chip carrier substrate, a heat spreader for attaching to the substrate, a semiconductor device mounted on the substrate and underneath the heat spreader and the multilayer thermal interface material interposed between the heat spreader and the semiconductor device. The heat spreader has a first coefficient of thermal expansion (CTE), CTE1, the buffer layer has a second CTE, CTE2, and the semiconductor device has a third CTE, CTE3, wherein CTE1>CTE2>CTE3.
    • 公开了一种多层热界面材料,其包括金属热界面材料的第一层,缓冲层,优选为第二层热界面材料,其可以是金属或非金属的。 多层热界面材料与芯片载体衬底的半导体器件组件,用于附接到衬底的散热器,安装在衬底上的散热器和放置在散热器下方的多层热界面材料结合使用 散热器和半导体器件。 散热器具有第一热膨胀系数(CTE),CTE1,缓冲层具有第二CTE,CTE2,半导体器件具有第三个CTE CTE3,其中CTE1> CTE2> CTE3。