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    • 6. 发明授权
    • X-ray detector comprising a directly converting semiconductor layer and calibration method for such an X-ray detector
    • X射线检测器包括直接转换半导体层和用于这种X射线检测器的校准方法
    • US08389928B2
    • 2013-03-05
    • US13088448
    • 2011-04-18
    • Peter HackenschmiedChristian SchröterMatthias Strassburg
    • Peter HackenschmiedChristian SchröterMatthias Strassburg
    • G01D18/00
    • G01T1/249G01T1/247G01T7/005
    • An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. One embodiment includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking into account of the present polarization state without using X-ray radiation. Another embodiment additionally relates to a calibration method for such an X-ray detector.
    • X射线检测器包括用于将入射辐射转换成具有半导体层的带隙能量特性的电信号的直接转换半导体层和用于将光耦合到半导体层中的至少一个光源,其中所产生的光用于 入射X射线量子点的模拟具有高于半导体层带隙能量的能量。 一个实施例包括至少一个评估单元,用于根据当光耦合到半导体层中时产生的电信号计算评估信号;以及至少一个校准单元,用于基于评估信号校准至少一个脉冲鉴别器。 这提供了在不使用X射线辐射的情况下考虑到目前的极化状态来快速重复地校准X射线检测器的先决条件。 另一个实施例另外涉及这种X射线检测器的校准方法。
    • 8. 发明申请
    • X-RAY RADIATION DETECTOR FOR DETECTING IONIZING RADIATION, IN PARTICULAR FOR USE IN A CT SYSTEM
    • 用于检测放射性的X射线辐射检测器,特别适用于CT系统
    • US20100246758A1
    • 2010-09-30
    • US12731179
    • 2010-03-25
    • Peter HackenschmiedChristian SchröterMatthias Strassburg
    • Peter HackenschmiedChristian SchröterMatthias Strassburg
    • G01T1/24A61B6/03
    • G01T1/249G01T1/24
    • An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.
    • 公开了一种用于检测电离辐射的X射线辐射检测器,特别是用于CT系统中的多个检测器元件。 在至少一个实施例中,每个检测器元件包括用作检测器材料的半导体,其具有面向辐射的上侧和背离辐射的下侧,至少两个电极,其中一个电极形成在半导体的上侧 通过金属化层,并且所有检测器元件的总和形成基部,其在每个点处具有基准法线。 在至少一个实施例中,本发明的区别在于,半导体的上侧具有在每个点处具有表面法线的表面结构,其中表面法线至少部分地对准与基准法线的角度。 在至少一个实施例中,本发明还涉及一种具有X射线辐射检测器的CT系统,其有利地包括根据本发明的至少一个实施例构造的多个检测器元件。
    • 9. 发明授权
    • X-ray radiation detector for detecting ionizing radiation, in particular for use in a CT system
    • 用于检测电离辐射的X射线辐射检测器,特别用于CT系统中
    • US08466423B2
    • 2013-06-18
    • US12731179
    • 2010-03-25
    • Peter HackenschmiedChristian SchröterMatthias Strassburg
    • Peter HackenschmiedChristian SchröterMatthias Strassburg
    • G01T1/24
    • G01T1/249G01T1/24
    • An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.
    • 公开了一种用于检测电离辐射的X射线辐射检测器,特别是用于CT系统中的多个检测器元件。 在至少一个实施例中,每个检测器元件包括用作检测器材料的半导体,其具有面向辐射的上侧和背离辐射的下侧,至少两个电极,其中一个电极形成在半导体的上侧 通过金属化层,并且所有检测器元件的总和形成基部,其在每个点处具有基准法线。 在至少一个实施例中,本发明的区别在于,半导体的上侧具有在每个点处具有表面法线的表面结构,其中表面法线至少部分地对准与基准法线的角度。 在至少一个实施例中,本发明还涉及一种具有X射线辐射检测器的CT系统,其有利地包括根据本发明的至少一个实施例构造的多个检测器元件。