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1. 发明申请

WO2005090648A3 ELECTROLYTIC PROCESSING APPARATUS AND ELECTROLYTIC PROCESSING METHOD 审中-公开
公开(公告)号：WO2005090648A3
公开(公告)日：2005-09-29
申请号：PCT/JP2005/005301
申请日：2005-03-16
申请人： EBARA CORPORATION , NOJI, Ikutaro , YASUDA, Hozumi , IIZUMI, Takeshi , KOBATA, Itsuki , HIROKAWA, Kazuto , SAITO, Takayuki , SUZUKI, Tsukuru , TOMA, Yasushi , KODERA, Akira
发明人： NOJI, Ikutaro , YASUDA, Hozumi , IIZUMI, Takeshi , KOBATA, Itsuki , HIROKAWA, Kazuto , SAITO, Takayuki , SUZUKI, Tsukuru , TOMA, Yasushi , KODERA, Akira
IPC分类号： C25F3/00
摘要： An electrolytic processing apparatus can maintain a difference in electric resistance between a recessed portion and a raised portion in the surface of a workpiece, thereby providing a processed surface with improved flatness. The electrolytic processing apparatus including: a processing electrode capable of bringing into contact with or closing to a workpiece; a feeding electrode for feeding electricity to the workpiece; a contact member disposed between the workpiece and at least one of the processing electrode and the feeding electrode, the degree of deformation of said contact member by a contact load applied from the workpiece being smal

2. 发明申请

WO2003098676A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：WO2003098676A1
公开(公告)日：2003-11-27
申请号：PCT/JP2003/006130
申请日：2003-05-16
申请人： EBARA CORPORATION , SHIRAKASHI, Mitsuhiko , YASUDA, Hozumi , KUMEKAWA, Masayuki , KOBATA, Itsuki
发明人： SHIRAKASHI, Mitsuhiko , YASUDA, Hozumi , KUMEKAWA, Masayuki , KOBATA, Itsuki
IPC分类号： H01L21/3063
CPC分类号： H01L21/02087 , B23H5/04 , B23H5/08 , B24B37/345 , C25F3/00 , C25F7/00 , H01L21/0209 , H01L21/32115 , H01L21/6708 , H01L21/6715 , H01L21/67173 , H01L21/67219 , H01L21/6723 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76873
摘要： There is provided a substrate processing apparatus which can process a substrate by using an electrolytic processing method, while reducing a load upon a CMP processing to the least possible extent. The substrate processing apparatus of the present invention includes: an electrolytic processing unit (36) for electrolytically removing the surface of the substrate W having a to-be-processed film formed in said surface, said unit including a feeding section (373) that comes into contact with said surface of the substrate W; a bevel-etching unit (48) for etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding section (373) in the electrolytic processing unit (36); a chemical mechanical polishing unit (34) for chemically and mechanically polishing the surface of the substrate.
摘要翻译：提供了一种基板处理装置，其可以通过使用电解处理方法来处理基板，同时尽可能减少CMP处理时的负载。本发明的基板处理装置包括：电解处理单元，用于电解去除在所述表面上形成的待处理膜的基板W的表面，所述单元包括来自的进料部分（373）与基板W的所述表面接触; 斜面蚀刻单元（48），用于在电解处理单元（36）中与已经与供电部分（373）接触的部分处去除未处理的被处理膜; 化学机械抛光单元（34），用于化学和机械地抛光衬底的表面。

3. 发明申请

WO2003065432A1 ELECTROLYTIC PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：电解处理装置和基板处理装置及方法
公开(公告)号：WO2003065432A1
公开(公告)日：2003-08-07
申请号：PCT/JP2003/001024
申请日：2003-01-31
申请人： EBARA CORPORATION , SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , YASUDA, Hozumi , KOBATA, Itsuki , NOJI, Ikutaro , YOSHIDA, Kaori
发明人： SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , YASUDA, Hozumi , KOBATA, Itsuki , NOJI, Ikutaro , YOSHIDA, Kaori
IPC分类号： H01L21/304
CPC分类号： C25F7/00 , B23H3/00 , B23H3/04 , B23H3/08 , B23H5/08 , B24B37/04 , C25F3/00 , C25F5/00 , H01L21/32115 , H01L21/3212
摘要： The present invention alleviates workloads in chemical-mechanical polishing (CMP) by replacing all or a portion of the substrate processing by means of chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like and enables processing insuring the higher flatness with the higher efficiency. The electrolytic processing apparatus according to the present invention comprises a chemical-mechanical polishing section 24 for chemically-mechanically polishing a surface of a substrate of a substrate, an electrolytic processing section 26 having a processing electrode and a feeding electrode and also having an ion exchanger 48 provided at least either between the substrate and the processing electrode or between the substrate and the feeding electrode for electrolytically processing a surface of a workpiece under the existence of a solution by applying a voltage between the processing electrode and the feeding electrode; and a top ring 74 capable of freely moving between the chemical-mechanical polishing section 24 and the processing electrode section 26.
摘要翻译：本发明通过使用去离子水，超纯水等的电解处理通过化学机械抛光替换基板处理的全部或一部分来减轻化学机械抛光（CMP）的工作量，并且能够加工确保较高的平坦度与效率更高。根据本发明的电解处理装置包括：化学机械抛光基板表面的化学机械抛光部分24;具有处理电极和馈电电极并且还具有离子交换器的电解处理部分26 48设置在所述基板和所述处理电极之间，或者所述基板和所述馈电电极之间，至少在所述处理电极和所述馈电电极之间施加电压，以在溶液存在下电解处理所述工件的表面; 以及能够在化学机械抛光部24和处理电极部26之间自由移动的顶环74。

4. 发明申请

WO2006049269A1 POLISHING APPARATUS 审中-公开
标题翻译：抛光装置
公开(公告)号：WO2006049269A1
公开(公告)日：2006-05-11
申请号：PCT/JP2005/020334
申请日：2005-10-31
申请人： EBARA CORPORATION , NABEYA, Osamu , TOGAWA, Tetsuji , FUKUSHIMA, Makoto , YASUDA, Hozumi
发明人： NABEYA, Osamu , TOGAWA, Tetsuji , FUKUSHIMA, Makoto , YASUDA, Hozumi
IPC分类号： H01L21/304 , B24B37/04
CPC分类号： B24B37/20 , B24B37/005 , B24B37/10 , B24B37/105 , B24B37/30 , B24B37/32 , B24B47/22 , B24B49/00 , B24B49/16
摘要： A polishing apparatus (1) has a polishing pad (22), a top ring (20) for holding a semiconductor wafer (W), a vertical movement mechanism (24) operable to move the top ring (20) in a vertical direction, a distance measuring sensor (46) operable to detect a position of the top ring (20) when a lower surface of the top ring (20) is brought into contact with the polishing pad (22), and a controller (47) operable to calculate an optimal position of the top ring (20) to polish the semiconductor wafer (W) based on the position detected by the distance measuring sensor (46). The vertical movement mechanism (24) includes a ball screw mechanism (30, 32, 38, 42) operable to move the top ring (20) to the optimal position.
摘要翻译：抛光装置（1）具有抛光垫（22），用于保持半导体晶片（W）的顶环（20），可垂直移动顶环（20）的垂直移动机构（24）距离测量传感器（46），当所述顶环（20）的下表面与所述抛光垫（22）接触时，可操作以检测所述顶环（20）的位置;以及控制器（47），其可操作以基于由距离测量传感器（46）检测到的位置，计算顶环（20）的最佳位置以对半导体晶片（W）进行抛光。垂直运动机构（24）包括可操作以将顶环（20）移动到最佳位置的滚珠丝杆机构（30,32,38,42）。

5. 发明申请

WO2005006425A1 ELECTROLYTIC PROCESSING APPARATUS AND ELECTROLYTIC PROCESSING METHOD 审中-公开
标题翻译：电解处理设备和电解处理方法
公开(公告)号：WO2005006425A1
公开(公告)日：2005-01-20
申请号：PCT/JP2004/010362
申请日：2004-07-14
申请人： EBARA CORPORATION , NOJI, Ikutaro , YASUDA, Hozumi , IIZUMI, Takeshi , HIROKAWA, Kazuto , KOBATA, Itsuki
发明人： NOJI, Ikutaro , YASUDA, Hozumi , IIZUMI, Takeshi , HIROKAWA, Kazuto , KOBATA, Itsuki
IPC分类号： H01L21/3063
CPC分类号： C25F3/00 , C25F7/00
摘要： The present invention provides an electrolytic processing apparatus and an electrolytic processing method which can effectively prevent the formation of pits that would impair the quality of the processed product. The electrolytic processing apparatus including: a processing electrode (210) for processing a workpiece; a feeding electrode (212) for feeding electricity to the workpiece; a power source (232) for applying a voltage between the processing electrode (210) and the feeding electrode (212); a pressure tight container (200) housing the processing electrode (210) and the feeding electrode (212) therein; and a high-pressure liquid supply system (204) for supplying a high-pressure liquid into the pressure tight container (210).
摘要翻译：本发明提供一种电解处理装置和电解处理方法，其可以有效地防止会影响加工产品质量的凹坑的形成。电解处理装置包括：处理工件的处理电极; 用于向工件供电的供电电极（212）; 用于在处理电极（210）和馈电电极（212）之间施加电压的电源（232）; 容纳所述处理电极（210）和所述馈电电极（212）的压力容器（200）; 以及用于将高压液体供应到耐压容器（210）中的高压液体供给系统（204）。

6. 发明申请

WO2003064734A1 ELECTROLYTIC PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：电解处理设备和方法
公开(公告)号：WO2003064734A1
公开(公告)日：2003-08-07
申请号：PCT/JP2003/001011
申请日：2003-01-31
申请人： EBARA CORPORATION , SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , YASUDA, Hozumi , KOBATA, Itsuki , NABEYA, Osamu
发明人： SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , YASUDA, Hozumi , KOBATA, Itsuki , NABEYA, Osamu
IPC分类号： C25F3/00
CPC分类号： C25F3/00 , C25F7/00 , H01L21/3063 , H01L21/32134
摘要： This invention relates to an electrolytic processing apparatus and method useful for processing a conductive material formed in the surface of a substrate, or for removing impurities adhering to the surface of a substrate. An electrolytic processing apparatus, including, a processing electrode that can come close to a workpiece, a feeding electrode for feeding electricity to the workpiece, an ion exchanger disposed in the space between the workpiece and the processing and the feeding electrodes, a fluid supply section for supplying a fluid between the workpiece and the ion exchanger, and a power source, wherein the processing electrode and/or the feeding electrode is electrically divided into a plurality of parts, and the power source applies a voltage to each of the divided electrode parts and can control voltage and/or electric current independently for each of the divided electrode parts.
摘要翻译：本发明涉及一种电解处理装置和方法，其用于处理形成在基板表面上的导电材料，或用于去除附着在基板表面上的杂质。一种电解处理装置，包括可以靠近工件的处理电极，用于向工件供电的供给电极，设置在工件和处理之间的空间中的离子交换器和供电电极，流体供应部分用于在工件和离子交换器之间供应流体，以及电源，其中处理电极和/或馈电电极被电分为多个部分，并且电源向每个分开的电极部分施加电压并且可以分别对每个分割电极部分分别控制电压和/或电流。

7. 发明申请

WO2009102047A1 POLISHING APPARATUS 审中-公开
标题翻译：抛光装置
公开(公告)号：WO2009102047A1
公开(公告)日：2009-08-20
申请号：PCT/JP2009/052456
申请日：2009-02-09
申请人： EBARA CORPORATION , FUKUSHIMA, Makoto , TOGAWA, Tetsuji , YASUDA, Hozumi , SAITO, Koji , NABEYA, Osamu , INOUE, Tomoshi
发明人： FUKUSHIMA, Makoto , TOGAWA, Tetsuji , YASUDA, Hozumi , SAITO, Koji , NABEYA, Osamu , INOUE, Tomoshi
IPC分类号： B24B37/04
CPC分类号： B24B37/30
摘要： A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table (100) having a polishing surface (101a), a top ring body (2) configured to hold and press a substrate against the polishing surface (101a), and a retainer ring (3) provided at an outer peripheral portion of the top ring body (2) and configured to press the polishing surface (101a). A fulcrum for receiving a lateral force applied from the substrate to the retainer ring (3) during polishing of the substrate is located above a central portion of the substrate.
摘要翻译：抛光装置用于将半导体晶片等基板研磨成平面镜面。抛光装置包括具有抛光面（101a）的抛光台（100），被配置为将基板保持并压靠在抛光表面（101a）上的顶环体（2），以及设置在抛光表面所述顶环体（2）的外周部分构造成按压所述抛光表面（101a）。用于在衬底抛光期间接收从衬底施加到保持环（3）的侧向力的支点位于衬底的中心部分的上方。

8. 发明申请

WO2003054255A1 ELECTROLYTIC PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：电解处理设备和方法
公开(公告)号：WO2003054255A1
公开(公告)日：2003-07-03
申请号：PCT/JP2002/012973
申请日：2002-12-11
申请人： EBARA CORPORATION , SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , YASUDA, Hozumi , KOBATA, Itsuki
发明人： SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , YASUDA, Hozumi , KOBATA, Itsuki
IPC分类号： C25F3/00
CPC分类号： C25F7/00 , B23H3/02 , B23H5/08 , C25F3/00 , H01L21/32125
摘要： There is provided an electrolytic processing apparatus and method that can effect processing of a workpiece with high processing precision and can produce an intended form of processed workpiece with high accuracy of form.The electrolytic processing apparatus includes: a processing electrode which can come close to a workpiece; a feeding electrode for feeding electricity to the workpiece; an ion exchanger disposed in at least one of the space between the workpiece and the processing electrode and the space between the workpiece and the feeding electrode; a fluid supply section for supplying a fluid to the space between the workpiece and at least one of the processing electrode and the feeding electrode; and a power source for supplying an electric power between the processing electrode and the feeding electrode while arbitrarily controlling at least one of a voltage and an electric current.
摘要翻译：本发明提供一种能够以高加工精度对工件进行加工的电解处理装置和方法，能够以高精度的形式生产加工工件的预期形式。电解处理装置包括：处理电极，可接近于工件; 用于向工件供电的供电电极; 离子交换器，其设置在所述工件和所述处理电极之间的空间中的至少一个和所述工件与所述馈电电极之间的空间中; 流体供应部分，用于将流体供应到工件与处理电极和馈电电极中的至少一个之间的空间; 以及用于在任意地控制电压和电流中的至少一个的同时在所述处理电极和所述馈电电极之间提供电力的电源。

9. 发明申请

WO2003030223A3 SUBSTRATE PROCESSING APPARATUS AND METHOD 审中-公开
公开(公告)号：WO2003030223A3
公开(公告)日：2003-04-10
申请号：PCT/JP2002/009255
申请日：2002-09-11
申请人： EBARA CORPORATION , KOBATA, Itsuki , SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , SAITO, Takayuki , TOMA, Yasushi , SUZUKI, Tsukuru , YAMADA, Kaoru , MAKITA, Yuji , YASUDA, Hozumi
发明人： KOBATA, Itsuki , SHIRAKASHI, Mitsuhiko , KUMEKAWA, Masayuki , SAITO, Takayuki , TOMA, Yasushi , SUZUKI, Tsukuru , YAMADA, Kaoru , MAKITA, Yuji , YASUDA, Hozumi
IPC分类号： C25D17/10
摘要： There is a provided a substrate processing apparatus that can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate; an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.

10. 发明申请

WO2003006206A1 SUBSTRATE POLISHING MACHINE 审中-公开
标题翻译：基板抛光机
公开(公告)号：WO2003006206A1
公开(公告)日：2003-01-23
申请号：PCT/JP2002/006979
申请日：2002-07-10
申请人： EBARA CORPORATION , TOGAWA, Tetsuji , NOJI, Ikutaro , NAMIKI, Keisuke , YASUDA, Hozumi , KOJIMA, Shunichiro , SAKURAI, Kunihiko , TAKADA, Nobuyuki , NABEYA, Osamu , FUKUSHIMA, Makoto , TAKAYANAGI, Hideki
发明人： TOGAWA, Tetsuji , NOJI, Ikutaro , NAMIKI, Keisuke , YASUDA, Hozumi , KOJIMA, Shunichiro , SAKURAI, Kunihiko , TAKADA, Nobuyuki , NABEYA, Osamu , FUKUSHIMA, Makoto , TAKAYANAGI, Hideki
IPC分类号： B24B37/04
CPC分类号： B24B37/30 , B24B37/32
摘要： There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.
摘要翻译：提供了一种衬底抛光机，其包括抛光表面和用于保持衬底并使其与抛光表面接触的衬底载体。基板载体包括载体主体，用于将待研磨的基板的表面保持在基板上的基板保持部件朝向研磨面。衬底保持构件以使得衬底保持构件能够朝向和远离抛光表面移动的方式安装在载体主体上。基板研磨机还包括基板保持部件定位装置，该基板保持部件定位装置设置在基板保持部件的与保持基板相同的一侧。衬底保持构件定位装置具有限定腔室的柔性构件，并且在引入不可压缩流体时沿朝向抛光表面的方向膨胀。

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