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    • 7. 发明申请
    • FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING
    • 用于半导体加工的可流动的含硅和碳的层
    • US20130217239A1
    • 2013-08-22
    • US13589528
    • 2012-08-20
    • Abhijit Basu MallickNitin K. Ingle
    • Abhijit Basu MallickNitin K. Ingle
    • H01L21/02
    • H01L21/02274H01L21/02123H01L21/02167H01L21/02211H01L21/02271H01L21/02348H01L21/76837
    • Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H3Si—CH2—SiH2—CH2—SiH3) as the silicon-and-carbon-containing precursor and hydrogen (H2) as the hydrogen-containing precursor. The hydrogen-containing precursor may also be a hydrocarbon, such as acetylene (C2H2) or ethylene (C2H4). The hydrogen-containing precursor is passed through a remote plasma region to form plasma effluents (the radical hydrogen precursor) which are flowed into the substrate processing region. When the silicon-and-carbon-containing precursor combines with the plasma effluents in the substrate processing region, they form a flowable silicon-carbon-and-hydrogen-containing layer on the semiconductor substrate.
    • 描述了用于在半导体衬底上形成和固化间隙填充硅 - 和碳的层的方法。 硅和碳组分可以来自已经在远程等离子体区域中被激活的自由基氢前体激发的含硅和碳的前体。 示例性前体包括作为含硅和碳的前体的1,3,5-三硅烷(H3Si-CH2-SiH2-CH2-SiH3)和作为含氢前体的氢(H 2)。 含氢前体也可以是烃,如乙炔(C 2 H 2)或乙烯(C 2 H 4)。 含氢前体通过远程等离子体区域以形成流入衬底加工区域的等离子体流出物(自由基氢前体)。 当含硅和碳的前体与衬底加工区域中的等离子体流出物相结合时,它们在半导体衬底上形成可流动的含硅 - 碳和氢的层。