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1. 发明申请

US20120083133A1 AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS 审中-公开
标题翻译：胺固化硅 - 氮化物膜
公开(公告)号：US20120083133A1
公开(公告)日：2012-04-05
申请号：US13227589
申请日：2011-09-08
申请人： Earl Osman Solis , Lili Ji , Yue Zhao , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Earl Osman Solis , Lili Ji , Yue Zhao , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/31
CPC分类号： H01L21/02326 , C23C16/345 , C23C16/56 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
摘要翻译：描述形成电介质层的方法。所述方法可以包括在基底上形成含硅 - 氮和氢的层。这些方法包括将含氮 - 和氢的含氧层进行臭氧固化，以将含氮 - 和氢的层转化为含硅和氧的层。在臭氧固化之后，在退火之前将该层暴露于低温下的胺 - 水组合。胺固化的存在允许在退火期间在较低温度下转化为含硅和氧的层更快速和完全地发生。胺固化还使得退火能够使用较少的氧化环境来实现转化为含硅和氧的层。

2. 发明申请

US20110159213A1 CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION 审中-公开
标题翻译：化学蒸气沉积通过辐射成分修饰改进
公开(公告)号：US20110159213A1
公开(公告)日：2011-06-30
申请号：US12905582
申请日：2010-10-15
申请人： Xiuyu Cai , Yue Zhao , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Xiuyu Cai , Yue Zhao , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： C23C16/40 , C23C16/56 , C23C16/455 , C23C16/50
CPC分类号： C23C16/345 , C23C16/505 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N2) and/or hydrogen (H2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。通过将氨和氮（N 2）和/或氢（H 2）流入等离子体中以在等离子体中形成自由基 - 氮前体，以便调节氮/氢比。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

3. 发明申请

US20110129616A1 OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS 有权
标题翻译：用于非碳离子组分CVD膜的氧气掺杂
公开(公告)号：US20110129616A1
公开(公告)日：2011-06-02
申请号：US12836991
申请日：2010-07-15
申请人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
发明人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
IPC分类号： H05H1/24
CPC分类号： C23C16/308 , C23C16/402 , C23C16/452 , C23C16/45565 , C23C16/56 , H01J37/32082 , H01J37/32357 , H01J37/32449
摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。自由基前体和含硅前体之一含有氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

4. 发明授权

US08980382B2 Oxygen-doping for non-carbon radical-component CVD films 有权
标题翻译：用于非碳自由基成分CVD膜的氧掺杂
公开(公告)号：US08980382B2
公开(公告)日：2015-03-17
申请号：US12836991
申请日：2010-07-15
申请人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
发明人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
IPC分类号： B05D1/34 , H05H1/24 , C23C16/34 , C23C16/40 , C23C16/50 , C23C16/56 , C23C16/30 , C23C16/452 , C23C16/455 , H01J37/32 , H05H1/46
CPC分类号： C23C16/308 , C23C16/402 , C23C16/452 , C23C16/45565 , C23C16/56 , H01J37/32082 , H01J37/32357 , H01J37/32449
摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。自由基前体和含硅前体之一含有氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

5. 发明申请

US20130217240A1 FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的可流动的硅 - 碳 - 氮层
公开(公告)号：US20130217240A1
公开(公告)日：2013-08-22
申请号：US13590611
申请日：2012-08-21
申请人： Abhijit Basu Mallick , Nitin K. Ingle , Linlin Wang , Brian S. Underwood
发明人： Abhijit Basu Mallick , Nitin K. Ingle , Linlin Wang , Brian S. Underwood
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/0234 , H01L21/31111
摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
摘要翻译：描述了在半导体衬底上形成电介质层的方法。所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。含硅前体和带电的含氮前体可以在化学气相沉积室中反应，以在基底上沉积可流动的硅 - 碳 - 氮材料。所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。

6. 发明申请

US20110151677A1 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开
标题翻译：在可流动CVD过程中形成的介电材料上进行的湿氧化过程
公开(公告)号：US20110151677A1
公开(公告)日：2011-06-23
申请号：US12643196
申请日：2009-12-21
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/316
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

7. 发明申请

US20130217239A1 FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的可流动的含硅和碳的层
公开(公告)号：US20130217239A1
公开(公告)日：2013-08-22
申请号：US13589528
申请日：2012-08-20
申请人： Abhijit Basu Mallick , Nitin K. Ingle
发明人： Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , H01L21/02123 , H01L21/02167 , H01L21/02211 , H01L21/02271 , H01L21/02348 , H01L21/76837
摘要： Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H3Si—CH2—SiH2—CH2—SiH3) as the silicon-and-carbon-containing precursor and hydrogen (H2) as the hydrogen-containing precursor. The hydrogen-containing precursor may also be a hydrocarbon, such as acetylene (C2H2) or ethylene (C2H4). The hydrogen-containing precursor is passed through a remote plasma region to form plasma effluents (the radical hydrogen precursor) which are flowed into the substrate processing region. When the silicon-and-carbon-containing precursor combines with the plasma effluents in the substrate processing region, they form a flowable silicon-carbon-and-hydrogen-containing layer on the semiconductor substrate.
摘要翻译：描述了用于在半导体衬底上形成和固化间隙填充硅 - 和碳的层的方法。硅和碳组分可以来自已经在远程等离子体区域中被激活的自由基氢前体激发的含硅和碳的前体。示例性前体包括作为含硅和碳的前体的1,3,5-三硅烷（H3Si-CH2-SiH2-CH2-SiH3）和作为含氢前体的氢（H 2）。含氢前体也可以是烃，如乙炔（C 2 H 2）或乙烯（C 2 H 4）。含氢前体通过远程等离子体区域以形成流入衬底加工区域的等离子体流出物（自由基氢前体）。当含硅和碳的前体与衬底加工区域中的等离子体流出物相结合时，它们在半导体衬底上形成可流动的含硅 - 碳和氢的层。

8. 发明授权

US08304351B2 In-situ ozone cure for radical-component CVD 有权
标题翻译：用于自由基组分CVD的原位臭氧固化
公开(公告)号：US08304351B2
公开(公告)日：2012-11-06
申请号：US12972711
申请日：2010-12-20
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

9. 发明授权

US09390914B2 Wet oxidation process performed on a dielectric material formed from a flowable CVD process 有权
标题翻译：在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
公开(公告)号：US09390914B2
公开(公告)日：2016-07-12
申请号：US13396410
申请日：2012-02-14
申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
发明人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
IPC分类号： H01L21/02
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

10. 发明申请

US20130217243A1 DOPING OF DIELECTRIC LAYERS 审中-公开
标题翻译：电介质层的掺杂
公开(公告)号：US20130217243A1
公开(公告)日：2013-08-22
申请号：US13590761
申请日：2012-08-21
申请人： Brian S. Underwood , Nitin K. Ingle , Abhijit Basu Mallick
发明人： Brian S. Underwood , Nitin K. Ingle , Abhijit Basu Mallick
IPC分类号： H01L21/02
CPC分类号： H01L21/02356 , H01L21/02167 , H01L21/02211 , H01L21/02222 , H01L21/02274 , H01L21/02321 , H01L21/0234 , H01L21/31111 , H01L21/31155
摘要： Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
摘要翻译：描述了用于在半导体衬底上形成和处理可流动的含硅 - 碳和氮的层的方法。硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化以加速氮与含硅和碳的前体的反应的含氮前体较低的沉积温度。初始可流动的含硅碳和氮的层被离子注入以增加蚀刻耐受性，防止收缩，调节膜张力和/或调节电特性。离子注入还可以去除能够流动的组分，但是在沉积后不再需要它们。已经发现使用离子注入的一些处理降低了暴露于大气中的膜的性质的演变。

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