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1. 发明公开

EP0007192A1 Process for preparing hetrojunction solar-cell devices 失效
标题翻译：埃斯特凡尔·赫尔斯特朗·冯·桑德森（Hetero-Übergängen）。
公开(公告)号：EP0007192A1
公开(公告)日：1980-01-23
申请号：EP79301216.2
申请日：1979-06-22
申请人： EXXON RESEARCH AND ENGINEERING COMPANY
发明人： Feng, Tom , Ghosh, Amal Kumar
IPC分类号： H01L31/18 , H01L21/203 , H01L21/363 , C23C13/04 , C30B23/02
CPC分类号： C23C14/225 , C23C14/24 , H01L21/02381 , H01L21/02565 , H01L21/02576 , H01L21/02631
摘要： A process for manufacturing a heterojunction device, for example a solar cell, comprises placing an N-type silicon semi-conductor body (3) in a vacuum chamber (6); also placing in the chamber (6) a vessel (4) containing tin oxide or a mixture of tin oxide and indium oxide; evacuating the chamber (6); generating, such as by an electron beam (7). a stream (9) of oxide vapor; and directing the stream (9) intothe silicon body (3) at an angle of incidence (θ) which is so selected, generally in the range 40° to 70', as to provide substantially maximum efficiency of the device. The coated substrate is heated and thereafter metal electrodes are deposited on the coated substrate. A solar cell of sunlight conversion-efficiency above 5% is consistently obtainable by the process.
摘要翻译：异质结器件例如太阳能电池的制造方法包括将N型硅半导体体（3）放置在真空室（6）中; 还在室（6）中放置包含氧化锡或氧化锡和氧化铟的混合物的容器（4）; 抽空腔室（6）; 例如通过电子束（7）产生氧化物蒸汽的流（9）; 并且以通常在40°至70°的范围内的入射角（θ）将流（9）引导到硅体（3）中，以提供器件的基本上最大的效率。将涂覆的基底加热，然后将金属电极沉积在涂覆的基底上。太阳能转换效率高于5％的太阳能电池一直可以通过该过程获得。

2. 发明公开

EP0008236A1 Process for forming tin oxide semiconductor heterojunction devices 失效
标题翻译： Verfahren zur Herstellung von Zinnoxid Halbleiter-Heteroübergang-Vorrichtungen。
公开(公告)号：EP0008236A1
公开(公告)日：1980-02-20
申请号：EP79301625.4
申请日：1979-08-10
申请人： EXXON RESEARCH AND ENGINEERING COMPANY
发明人： Feng, Tom , Ghosh, Amal Kumar
IPC分类号： H01L31/06
CPC分类号： H01L31/074 , Y02E10/50
摘要： A process for forming tin oxide semi conductive heterojunction devices, for example solar cells, comprises providing and N-type silicon substrate (4), preferably having a resistivity less than 10 ohm-cm; forming an insulating layer (3) on at least part of the surface of said silicon substrate, said insulating layer being SiO 2 , Si 3 N 4 , Ge0 2 , AI 2 O 3 or TiO 2 ; heating said substrate to provide a substrate surface temperature in the range of 300°C to 400°C, preferably 330 to 360°C; and contacting said heated substrate in the presence of air with an atomized liquid solution of tin tetrachloride and an organic ester having a boiling point below about 250°C while continuing said heating, said contacting being for a time at least sufficient to deposit a conductive coating of tin oxide (2) on the insulating layer on the substrate.
Thereafter a first metal electrode (6) can be deposited onto the tin oxide layer and a second metal electrode (7) can be deposited onto a surface of the silicon substrate either not having the tin oxide coated, or from which that coating has first been removed. Si0 2 is the preferred insulating layer material and ethyl acetate the preferred ester. The invention enables a solar cell to be produced having a sunlight conversion efficiency in the order of 10 to 12%.
摘要翻译：用于形成氧化锡半导体异质结装置（例如太阳能电池）的方法包括提供优选具有小于10欧姆 - 厘米电阻率的N型硅衬底（4）; 在所述硅衬底的表面的至少一部分上形成绝缘层（3），所述绝缘层为SiO 2，Si 3 N 4，GeO 2，Al 2 O 3或TiO 2; 加热所述基底以提供在300℃至400℃，优选330至360℃范围内的基底表面温度; 并在空气存在下将所述加热的底物与四氯化锡的雾化液体溶液和沸点低于约250℃的有机酯接触，同时继续进行所述加热，所述接触时间至少足以沉积导电涂层的氧化锡（2）在基板上的绝缘层上。然后可以将第一金属电极（6）沉积到氧化锡层上，并且可以将第二金属电极（7）沉积到硅衬底的不具有涂覆氧化锡的表面上，或者从其上该涂层首先被去除。 SiO 2是优选的绝缘层材料，乙酸乙酯是优选的酯。本发明能够制造具有10〜12％左右的太阳光转换效率的太阳能电池。

3. 发明授权

EP0007192B1 Process for preparing hetrojunction solar-cell devices 失效
标题翻译：制备HETROJUNCTION太阳能电池器件的方法
公开(公告)号：EP0007192B1
公开(公告)日：1983-03-30
申请号：EP79301216.2
申请日：1979-06-22
申请人： EXXON RESEARCH AND ENGINEERING COMPANY
发明人： Feng, Tom , Ghosh, Amal Kumar
IPC分类号： H01L31/18 , H01L21/203 , H01L21/363 , C23C13/04 , C30B23/02
CPC分类号： C23C14/225 , C23C14/24 , H01L21/02381 , H01L21/02565 , H01L21/02576 , H01L21/02631

4. 发明授权

EP0008236B1 Process for forming tin oxide semiconductor heterojunction devices 失效
标题翻译：用于形成氧化钛半导体异质结器件的方法
公开(公告)号：EP0008236B1
公开(公告)日：1982-06-23
申请号：EP79301625.4
申请日：1979-08-10
申请人： EXXON RESEARCH AND ENGINEERING COMPANY
发明人： Feng, Tom , Ghosh, Amal Kumar
IPC分类号： H01L31/06
CPC分类号： H01L31/074 , Y02E10/50

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