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1. 发明授权

US10466413B2 Opto-electronic system including optical input/output device 有权
公开(公告)号：US10466413B2
公开(公告)日：2019-11-05
申请号：US15607717
申请日：2017-05-30
申请人： Electronics and Telecommunications Research Institute
发明人： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , Myung joon Kwack
IPC分类号： G02B6/12 , H01L31/167 , G02B6/42 , G02B6/13 , H01L21/762 , H01L27/15
摘要： Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

2. 发明授权

US10168474B2 Method of manufacturing optical input/output device 有权
公开(公告)号：US10168474B2
公开(公告)日：2019-01-01
申请号：US15607726
申请日：2017-05-30
申请人： Electronics and Telecommunications Research Institute
发明人： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , myung joon Kwack
IPC分类号： G02B6/12 , G02B6/42 , G02B6/13 , H01L21/762 , H01L27/15 , H01L31/167
摘要： Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

3. 发明授权

US09690042B2 Optical input/output device, optical electronic system including the same, and method of manufacturing the same 有权
公开(公告)号：US09690042B2
公开(公告)日：2017-06-27
申请号：US14062454
申请日：2013-10-24
申请人： Electronics and Telecommunications Research Institute
发明人： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , Myung Joon Kwack
IPC分类号： H01L27/15 , H01L31/153 , G02B6/12 , G02B6/13 , G02B6/42 , H01L21/762
CPC分类号： G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
摘要： Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

4. 发明授权

US11677060B2 Method for transferring and bonding of devices 有权
公开(公告)号：US11677060B2
公开(公告)日：2023-06-13
申请号：US17228310
申请日：2021-04-12
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Jiho Joo , Yong Sung Eom , Gwang-Mun Choi , Kwang-Seong Choi , Chanmi Lee , Ki Seok Jang
IPC分类号： H01L33/62 , H01L23/00 , H01L33/56 , H01L25/075
CPC分类号： H01L33/62 , H01L24/27 , H01L24/81 , H01L24/83 , H01L33/56 , H01L25/0753 , H01L2224/2712 , H01L2224/2919 , H01L2224/8112 , H01L2224/8122 , H01L2224/83909 , H01L2924/0715 , H01L2924/12041 , H01L2933/005 , H01L2933/0066
摘要： Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.

5. 发明授权

US11488841B2 Method for manufacturing semiconductor package 有权
公开(公告)号：US11488841B2
公开(公告)日：2022-11-01
申请号：US16795009
申请日：2020-02-19
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Yong Sung Eom , Kwang-Seong Choi , Ki Seok Jang , Seok-Hwan Moon , Jiho Joo
IPC分类号： H01L21/50 , H01L23/00 , H01L21/48 , H01L21/60
摘要： Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.

6. 发明授权

US09728657B2 Photodetector 有权
公开(公告)号：US09728657B2
公开(公告)日：2017-08-08
申请号：US14812981
申请日：2015-07-29
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Jiho Joo , Gyungock Kim , Myungjoon Kwack , Sang Hoon Kim , Sun Ae Kim , In Gyoo Kim , Jaegyu Park , Jin Hyuk Oh , Ki Seok Jang
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/107 , H01L31/18
CPC分类号： H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
摘要： Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

7. 发明授权

US09171996B2 Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same 有权
标题翻译：低电压高增益高速锗光电检测器及其制造方法
公开(公告)号：US09171996B2
公开(公告)日：2015-10-27
申请号：US13949081
申请日：2013-07-23
申请人： Electronics and Telecommunications Research Institute
发明人： Gyungock Kim , Sang Hoon Kim , Ki Seok Jang , In Gyoo Kim , Jin Hyuk Oh , Sun Ae Kim
IPC分类号： H01L33/06 , H01L33/00 , H01L31/0352 , H01L31/107 , B82Y20/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
摘要： Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
摘要翻译：提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层层，并且可以在吸收层上设置多晶硅第二接触层。吸收层可以被配置为包括锗量子点或线。

8. 发明授权

US11618109B2 Wire for electric bonding 有权
公开(公告)号：US11618109B2
公开(公告)日：2023-04-04
申请号：US17364128
申请日：2021-06-30
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Gwang-Mun Choi , Yong Sung Eom , Kwang-Seong Choi , Jiho Joo , Chanmi Lee , Ki Seok Jang
IPC分类号： B23K35/00 , B23K35/36 , B23K35/40 , B23K35/02
摘要： Provided is a wire for electric bonding, which includes a solder wire and a composition for bonding adjacent to the solder wire, the solder wire is wet when reaches to a melting point as heat is transferred, the composition for bonding includes an epoxy resin, a reducing agent, and a curing agent, the reducing agent removes a metal oxide formed on a surface of the solder wire, and the epoxy resin is cured by chemically reacting with the reducing agent and the curing agent at a curing temperature.

9. 发明授权

US09459409B2 Optical coupling device 有权
标题翻译：光耦合装置
公开(公告)号：US09459409B2
公开(公告)日：2016-10-04
申请号：US14820406
申请日：2015-08-06
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Myungjoon Kwack , Gyungock Kim , Jaegyu Park , Ki Seok Jang , Jiho Joo
IPC分类号： G02B6/12 , G02B6/30 , G02B6/36
CPC分类号： G02B6/423 , G02B6/3644 , G02B6/4239 , G02B6/4249
摘要： An optical coupling device comprises an optical fiber block including a first block part and a second block part contacting with one side of the first block part, an optical fiber penetrating the optical fiber block and having an end surface exposed at a bottom surface of the optical fiber block, a semiconductor chip disposed below the optical fiber block and having an optical input/output element disposed on a top surface of the semiconductor chip to correspond with the end surface of the optical fiber, and a planarization layer disposed on the top surface of the semiconductor chip and having a recess region. A bottom surface of the first block part has a higher level than that of the second block part. The bottom surface of the second block part contacts with a bottom of the recess region. The optical fiber is optically coupled with the optical input/output element.
摘要翻译：光耦合装置包括光纤块，该光纤块包括与第一块部分的一侧接触的第一块部分和第二块部分，穿过光纤块的光纤，并且具有暴露在光学器件的底表面处的端面光纤块，设置在光纤块下方的半导体芯片，并且具有设置在半导体芯片的顶表面上的光输入/输出元件，以对应于光纤的端面;以及平坦化层，设置在光纤的顶表面上半导体芯片并具有凹部区域。第一块部分的底表面具有比第二块部分更高的水平。第二块部的底面与凹部的底部接触。光纤与光输入/输出元件光学耦合。

10. 发明授权

US09231372B2 Semiconductor laser and method of fabricating the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US09231372B2
公开(公告)日：2016-01-05
申请号：US14279839
申请日：2014-05-16
申请人： Electronics and Telecommunications Research Institute
发明人： In Gyoo Kim , Sang Hoon Kim , Jaegyu Park , Gyungock Kim , Ki Seok Jang
IPC分类号： H01S5/00 , H01S5/10 , H01S5/20
CPC分类号： H01S5/1021 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/136 , G02B2006/12061 , G02B2006/12147 , H01S5/021 , H01S5/026 , H01S5/2086 , H01S5/2272 , H01S5/3223 , H01S2301/176 , H01S2304/00
摘要： Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
摘要翻译：提供一种制造半导体激光器的方法。该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。

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