会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明专利
    • Substrate holding device
    • 基板保持装置
    • JP2008066761A
    • 2008-03-21
    • JP2007308285
    • 2007-11-29
    • Ebara Corp株式会社荏原製作所
    • TOGAWA TETSUJIFUKUSHIMA MAKOTOSAKURAI KUNIHIKOYOSHIDA HIROSHINABEYA OSAMUICHIMURA TERUHIKO
    • H01L21/304B24B37/04B24B37/30
    • PROBLEM TO BE SOLVED: To provide a substrate holding device which can polish according to a film thickness distribution of a thin film formed on the surface of an object to be polished such as semiconductor wafers and can obtain uniformity in film thickness after polishing. SOLUTION: The substrate holding device which holds a substrate W serving as an object to be polished and presses it to a polishing surface includes a top ring body 2 internally having an accommodating space; a vertically moving member 6 vertically movable in an accommodating space of the top ring body 2, and a seal ring 4 coming into contact with the upper surface of the outer periphery of the substrate W. The vertically moving member 6 has a supporting portion 6c whose radial length for supporting the seal ring 4 is 1 mm to 7 mm. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种可以根据形成在待抛光对象表面上的诸如半导体晶片的薄膜的膜厚分布来抛光的衬底保持装置,并且可以在抛光后获得膜厚度的均匀性 。 解决方案:将用作被抛光物体的基板W保持在抛光表面上的基板保持装置包括内部具有容纳空间的顶环体2; 可在顶环体2的容置空间中垂直移动的垂直移动构件6和与基板W的外周的上表面接触的密封环4.垂直移动构件6具有支撑部6c, 用于支撑密封环4的径向长度为1mm至7mm。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Polishing method
    • 抛光方法
    • JP2003311609A
    • 2003-11-05
    • JP2002116721
    • 2002-04-18
    • Ebara Corp株式会社荏原製作所
    • TOGAWA TETSUJIFUKUSHIMA MAKOTOSAKURAI KUNIHIKOYOSHIDA HIROSHINABEYA OSAMUICHIMURA TERUHIKO
    • B24B37/005B24B37/30H01L21/304H01L21/306B24B37/04B24B37/00
    • B24B37/30B24B37/013B24B37/042H01L21/30625Y10S438/977
    • PROBLEM TO BE SOLVED: To provide a polishing method capable of certainly sucking and separating a polished object even when the polished object is held via an elastic film for polishing. SOLUTION: In this polishing method, a top ring 23 holds a semiconductor wafer W and the semiconductor wafer W is pressed onto a polished surface 10 and polished. The elastic film 60 is mounted to the lower surface of a vertically movable member 62 to form a pressure chamber 70 in the top ring 23, and pressurized fluid is supplied to the pressure chamber 70 to press the semiconductor wafer W onto the polished surface 10 with the fluid pressure of the fluid to polish it. Then, the pressurized fluid is injected from an opening 62a formed in the central part of the vertically movable member 62 to separate the semiconductor wafer W after the polishing from the top ring 23. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供一种即使当抛光物体经由用于抛光的弹性膜保持时也能够可靠地吸取和分离抛光物体的抛光方法。 解决方案:在该抛光方法中,顶环23保持半导体晶片W,并将半导体晶片W压在抛光表面10上并进行抛光。 弹性膜60安装在可垂直移动的构件62的下表面上,以在顶环23中形成压力室70,并且将压力流体供应到压力室70,以将半导体晶片W挤压到抛光表面10上, 流体的流体压力来对其进行抛光。 然后,从形成在可垂直移动部件62的中心部分的开口62a注入加压流体,以从抛光后将半导体晶片W从顶环23分离。(C)2004,JPO