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    • 1. 发明申请
    • ORGANIC LIGHT EMITTING AMBIPOLAR FIELD EFFECT TRANSISTOR WITH DISTRIBUTED LIGHT EMISSION
    • 具有分布式发光的有机发光环形场效应晶体管
    • WO2013128344A1
    • 2013-09-06
    • PCT/IB2013/051400
    • 2013-02-21
    • E.T.C. S.R.L.
    • CAPELLI, RaffaellaTOFFANIN, StefanoGENERALI, GianlucaMUCCINI, Michele
    • H01L51/52H01L27/32H01L51/00
    • H01L51/5296H01L51/0025H01L51/0068H01L51/0081H01L51/0087H01L51/5004H01L51/5024H01L2251/552
    • An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination, comprises: a gate electrode, a dielectric layer superposed to said gate electrode, an ambipolar channel superposed to said dielectric layer, comprising a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCp and lowest unoccupied molecular orbital LUMO-SCp, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCn and lowest unoccupied molecular orbital LUMO-SCn and a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between said P-type semiconductor layer and said N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contact with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.
    • 一种有机双极发光场效应晶体管,其具有层叠在另一层上的层叠结构,适用于产生扩散照明,包括:栅电极,与所述栅电极叠加的电介质层,叠加到所述介电层的双极通道, 包括其能带由其最高占据分子轨道HOMO-SCp和最低未占分子轨道LUMO-SCp确定的P型半导体层,其能带由其最高占据分子轨道HOMO-SCn确定的N型半导体层 和最低未占据的分子轨道LUMO-SCn和适于允许相反符号的电荷载流子复合的发光层,插入在所述P型半导体层和所述N型半导体层之间,其能带由其最高占据分子 轨道HOMO-R和最低未占分子轨道LUMO-R; 源电极,其适于注入适于注入第二类型的电荷的第一类型和漏极的电荷,所述源电极和漏电极与所述P型或N型半导体层的相同层接触, 所述半导体层中的另一个与介电层接触。