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    • 6. 发明申请
    • ORGANIC ELECTRONIC DEVICE HAVING LOW BACKGROUND LUMINESCENCE
    • 具有低背景光泽度的有机电子设备
    • WO2005027237A2
    • 2005-03-24
    • PCT/US2004/028166
    • 2004-08-27
    • E.I. DUPONT DE NEMOURS AND COMPANYYU, GangSUN, RunguangWANG, Jian
    • YU, GangSUN, RunguangWANG, Jian
    • H01L51/00
    • H01L51/5262H01L51/5215H01L51/5284
    • An organic electronic device has an improved contrast ratio by lowering background luminescence from ambient radiation source(s). Background luminescence may be lowered by increasing absorption of ambient radiation, by reducing reflection of ambient radiation, or a combination of the two. Lower background luminescence can be achieved by using one or more black layers or lattices that are incorporated within the organic electronic device. Also, a large number of materials can be used for high absorbance layers. A change in materials for the electronic device may not be needed, and therefore, new material compatibility issues may not arise. Further, from an electronic performance standpoint, some layers may not be too sensitive to thickness and a plurality of narrow ranges of thicknesses may be used for a layer to allow a layer to have the proper electrical and optical properties. The embodiments obviate the need for a circular polarizer.
    • 通过降低来自环境辐射源的背景光,有机电子器件具有改善的对比度。 可以通过增加环境辐射的吸收,减少环境辐射的反射或两者的组合来降低背景发光。 通过使用结合在有机电子器件中的一个或多个黑色层或晶格可以实现较低背景发光。 此外,可以使用大量材料用于高吸光度层。 可能不需要更改电子设备的材料,因此可能不会出现新的材料兼容性问题。 此外,从电子性能观点来看,一些层可能不会对厚度太敏感,并且可以使用多个窄范围的厚度来使层允许层具有适当的电和光学性质。 这些实施例消除了对圆偏振器的需要。
    • 9. 发明申请
    • THIN-FILM TRANSISTORS AND PROCESSES FOR FORMING THE SAME
    • 薄膜晶体管及其形成方法
    • WO2006060521A1
    • 2006-06-08
    • PCT/US2005/043388
    • 2005-11-30
    • E.I. DUPONT DE NEMOURS AND COMPANYLAN, Je-hsiungYU, Gang
    • LAN, Je-hsiungYU, Gang
    • H01L29/786H01L29/423H01L21/336
    • H01L29/4908H01L29/42384H01L29/66606H01L29/6675H01L29/78633H01L29/78648H01L29/78666H01L29/78675H01L29/78681H01L29/7869
    • A TFT includes a substrate and a first semiconductor layer overlying the substrate. A portion of the first semiconductor layer is a channel region of the TFT. The TFT also includes spaced-apart first and second source/drain structures overlying the first semiconductor layer. From a plan view of the TFT, the channel region lies between the first source/drain structure and the second source/drain structure. The TFT further includes a gate dielectric layer overlying the channel region and the first and second source/drain structures, and a gate electrode overlying the first gate dielectric layer. A process for forming the TFT includes forming first and second metal- containing structures over first and second semiconductor layers. The process also includes removing the portion of the second semiconductor layer lying between the first and second source/drain structures. A gate dielectric layer and a gate electrode are formed within the spaced-apart first and second source/drain structures.
    • TFT包括衬底和覆盖衬底的第一半导体层。 第一半导体层的一部分是TFT的沟道区。 TFT还包括覆盖在第一半导体层上的间隔开的第一和第二源极/漏极结构。 从TFT的平面图,沟道区域位于第一源极/漏极结构和第二源极/漏极结构之间。 TFT还包括覆盖沟道区和第一和第二源极/漏极结构的栅极电介质层和覆盖第一栅极介电层的栅电极。 用于形成TFT的工艺包括在第一和第二半导体层上形成第一和第二含金属结构。 该方法还包括去除位于第一和第二源极/漏极结构之间的第二半导体层的部分。 在间隔开的第一和第二源极/漏极结构内形成栅极电介质层和栅电极。