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1. 发明申请

US20080096332A1 METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE 审中-公开
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US20080096332A1
公开(公告)日：2008-04-24
申请号：US11746265
申请日：2007-05-09
申请人： Duck-Jung LEE , Kyung-Seop KIM , Yong-Eui LEE , Myung-Il PARK , Dong-Chin LEE
发明人： Duck-Jung LEE , Kyung-Seop KIM , Yong-Eui LEE , Myung-Il PARK , Dong-Chin LEE
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A gate insulating layer, an active layer and a data metal film are sequentially formed on a substrate. A first photoresist pattern having a relatively small thickness in a channel forming area with respect to a thickness of the photoresist pattern not in the channel forming area is formed on the data metal film. The data metal film and the active layer are sequentially etched using the first photoresist pattern. The active layer is etched using the first photoresist pattern. The first photoresist pattern is dry etched using a gas mixture including a sulfur hexafluoride gas and an oxygen gas to form a second photoresist pattern with an opening formed in the channel forming area. The data metal film is then etched using the second photoresist pattern. Dry, wet or acid cleaning procedures used within the manufacturing method reduce formation of stringers in the substrate.
摘要翻译：栅极绝缘层，有源层和数据金属膜依次形成在基板上。在数据金属膜上形成相对于不在通道形成区域中的光致抗蚀剂图案的厚度的通道形成区域中具有相对较小厚度的第一光致抗蚀剂图案。使用第一光致抗蚀剂图案依次蚀刻数据金属膜和有源层。使用第一光致抗蚀剂图案蚀刻有源层。使用包括六氟化硫气体和氧气的气体混合物对第一光致抗蚀剂图案进行干蚀刻，以形成在通道形成区域中形成的开口的第二光致抗蚀剂图案。然后使用第二光致抗蚀剂图案蚀刻数据金属膜。在制造方法中使用的干，湿或酸清洗程序减少了基材中桁条的形成。

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