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    • 6. 发明申请
    • Bitline leakage limiting with improved voltage regulation
    • 位线泄漏限制与改进的电压调节
    • US20070253265A1
    • 2007-11-01
    • US11414364
    • 2006-05-01
    • Christopher MillerCharles Drake
    • Christopher MillerCharles Drake
    • G11C7/00G11C7/02
    • G11C7/12G11C7/02
    • Circuit arrangements and methods are provided for regulating and maintaining voltage on bitlines of a semiconductor memory device. According to one embodiment, first and second regulation devices are connected to a charging circuit. At the beginning of a charging period, voltage on the bitlines is regulated with the second regulation device as the bitlines are initially charged to a voltage. After initially charging the bitlines to the voltage, voltage on the bitlines is regulated with the first regulation device that also limits current to the bitlines when there is a leakage anomaly associated with the bitlines. According to another embodiment, a charging circuit that is connected to sense nodes of a sense amplifier while the sense nodes are connected to the bitlines is activated so that the charging circuit assists in charging the bitlines at the beginning of a charging period. After the bitlines are initially charged at the beginning of the charging period, voltage on the bitlines is regulated with a first regulation device that regulates current to the bitlines and limits current to the bitlines when there is a leakage anomaly associated with the bitlines.
    • 提供电路布置和方法用于调节和维持半导体存储器件的位线上的电压。 根据一个实施例,第一和第二调节装置连接到充电电路。 在充电周期开始时,由于位线最初被充电到电压,所以利用第二调节装置调节位线上的电压。 在最初将位线充电到电压之后,利用第一调节装置来调节位线上的电压,当与位线相关联的泄漏异常时也将电流限制到位线。 根据另一个实施例,当感测节点连接到位线时连接到感测放大器的感测节点的充电电路被激活,使得充电电路在充电周期开始时协助对位线充电。 在充电周期开始之后,位线最初充电之后,利用第一调节装置来调节位线上的电压,该第一调节装置在与位线相关联的泄漏异常时将电流调节到位线并限制位线的电流。
    • 7. 发明授权
    • Bitline leakage limiting with improved voltage regulation
    • 位线泄漏限制与改进的电压调节
    • US07403439B2
    • 2008-07-22
    • US11414364
    • 2006-05-01
    • Christopher MillerCharles Drake
    • Christopher MillerCharles Drake
    • G11C7/00
    • G11C7/12G11C7/02
    • Circuit arrangements and methods are provided for regulating and maintaining voltage on bitlines of a semiconductor memory device. According to one embodiment, first and second regulation devices are connected to a charging circuit. At the beginning of a charging period, voltage on the bitlines is regulated with the second regulation device as the bitlines are initially charged to a voltage. After initially charging the bitlines to the voltage, voltage on the bitlines is regulated with the first regulation device that also limits current to the bitlines when there is a leakage anomaly associated with the bitlines. According to another embodiment, a charging circuit that is connected to sense nodes of a sense amplifier while the sense nodes are connected to the bitlines is activated so that the charging circuit assists in charging the bitlines at the beginning of a charging period. After the bitlines are initially charged at the beginning of the charging period, voltage on the bitlines is regulated with a first regulation device that regulates current to the bitlines and limits current to the bitlines when there is a leakage anomaly associated with the bitlines.
    • 提供电路布置和方法用于调节和维持半导体存储器件的位线上的电压。 根据一个实施例,第一和第二调节装置连接到充电电路。 在充电周期开始时,由于位线最初被充电到电压,所以利用第二调节装置调节位线上的电压。 在最初将位线充电到电压之后,利用第一调节装置来调节位线上的电压,当与位线相关联的泄漏异常时也将电流限制到位线。 根据另一个实施例,当感测节点连接到位线时连接到感测放大器的感测节点的充电电路被激活,使得充电电路在充电周期开始时协助对位线充电。 在充电周期开始之后,位线最初充电之后,利用第一调节装置来调节位线上的电压,该第一调节装置在与位线相关联的泄漏异常时将电流调节到位线并限制位线的电流。