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1. 发明申请

US20170327712A1 NEUTRAL LAYER POLYMERS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开
公开(公告)号：US20170327712A1
公开(公告)日：2017-11-16
申请号：US15190481
申请日：2016-06-23
申请人： Dow Global Technologies LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Peter Trefonas, III , Phillip D. Hustad , Deyan Wang , Rahul Sharma , Mingqi Li , Jieqian J. Zhang
IPC分类号： C09D153/00 , C08F293/00 , B81C1/00 , G03F7/00 , C08L83/10 , C08L53/00 , C08G77/442
CPC分类号： C09D153/00 , B81C1/00031 , B81C2201/0149 , C08F293/005 , C08F2438/03 , C08G77/442 , C08L53/00 , C08L83/10 , G03F7/0002 , C08L33/12
摘要： Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

2. 发明申请

US20170123316A1 BLOCK COPOLYMERS AND PATTERN TREATMENT COMPOSITIONS AND METHODS 审中-公开
公开(公告)号：US20170123316A1
公开(公告)日：2017-05-04
申请号：US15297526
申请日：2016-10-19
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Huaxing Zhou , Vipul Jain , Jin Wuk Sung , Peter Trefonas, III , Phillip D. Hustad , Mingqi Li
IPC分类号： G03F7/038 , G03F7/32 , G03F7/16 , G03F7/20 , G03F7/004 , C08F293/00
CPC分类号： G03F7/038 , B81C2201/0149 , C08F293/00 , C08F293/005 , C08F2438/03 , C08L53/00 , C09D153/00 , C09D183/10 , G03F7/0045 , G03F7/11 , G03F7/162 , G03F7/165 , G03F7/168 , G03F7/2004 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/31144
摘要： Block copolymers comprise a first block comprising an alternating copolymer, and a second block comprising a unit comprising a hydrogen acceptor. The block copolymers find particular use in pattern shrink compositions and methods in semiconductor device manufacture for the provision of high resolution patterns.

3. 发明申请

US20150376408A1 METHODS FOR MANUFACTURING BLOCK COPOLYMERS AND ARTICLES MANUFACTURED THEREFROM 有权
标题翻译：制备块状共聚物的方法及其制备的制品
公开(公告)号：US20150376408A1
公开(公告)日：2015-12-31
申请号：US14745551
申请日：2015-06-22
申请人： DOW GLOBAL TECHNOLOGIES LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Jieqian Zhang , Phillip D. Hustad , Peter Trefonas, III , Mingqi Li , Valeriy V. Ginzburg , Jeffrey D. Weinhold
IPC分类号： C08L83/10 , H01L21/311 , C08L25/08
CPC分类号： H01L21/311 , B82Y30/00 , B82Y40/00 , C08G77/442 , C08L25/08 , C08L2205/025 , C08L2205/035 , C09D183/10 , G03F7/0002 , H01L21/0332 , H01L21/31116 , H01L21/31138 , C08L25/00 , C08L83/00
摘要： Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate.
摘要翻译：本文公开了包含第一嵌段共聚物的组合物，其包含第一嵌段和第二嵌段; 其中第一块具有比第二块更高的表面能; 第二嵌段共聚物，其包含第一嵌段和第二嵌段; 其中第一嵌段共聚物的第一嵌段与第二嵌段共聚物的第一嵌段化学相同或类似，第一嵌段共聚物的第二嵌段化学上与第二嵌段共聚物的第二嵌段相同或相似 ; 其中基于第二嵌段共聚物的第一嵌段的总固体的重量百分比大于第一嵌段共聚物的第一嵌段的重量百分数; 其中第一嵌段共聚物相分离成单个单独置于基材上时的圆柱形或层状结构域的第一形态。

4. 发明授权

US09209067B2 Gap-fill methods 有权
标题翻译：间隙填充方法
公开(公告)号：US09209067B2
公开(公告)日：2015-12-08
申请号：US14542428
申请日：2014-11-14
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Jong Keun Park , Cheng-Bai Xu , Phillip D. Hustad , Mingqi Li
IPC分类号： H01L21/762
CPC分类号： H01L21/76224
摘要： Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.
摘要翻译：提供间隙填充方法。所述方法包括：（a）提供在衬底的表面上具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含自交联聚合物和溶剂，其中所述自交联聚合物包含第一单元，所述第一单元包含聚合主链和可交联基团，骨干和（c）在温度下加热间隙填充组合物以使聚合物自交联。该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。

5. 发明授权

US10287455B2 Methods for manufacturing block copolymers and articles manufactured therefrom 有权
公开(公告)号：US10287455B2
公开(公告)日：2019-05-14
申请号：US15494821
申请日：2017-04-24
申请人： DOW GLOBAL TECHNOLOGIES LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Jieqian Zhang , Phillip D. Hustad , Peter Trefonas, III , Mingqi Li , Valeriy V. Ginzburg , Jeffrey D. Weinhold
IPC分类号： C09D183/10 , C08G77/442 , C08L83/10 , B05D3/00 , C08F220/14
摘要： Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.

6. 发明授权

US10133179B2 Pattern treatment methods 有权
公开(公告)号：US10133179B2
公开(公告)日：2018-11-20
申请号：US15224503
申请日：2016-07-29
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Jin Wuk Sung , Mingqi Li , Jong Keun Park , Joshua A. Kaitz , Vipul Jain , Chunyi Wu , Phillip D. Hustad
IPC分类号： C09D153/02 , G03F7/40 , C09D153/00 , G03F7/038 , G03F7/20 , G03F7/32 , G03F7/38 , G03F7/039
摘要： A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

7. 发明申请

US20180031975A1 PATTERN TREATMENT METHODS 审中-公开
公开(公告)号：US20180031975A1
公开(公告)日：2018-02-01
申请号：US15224503
申请日：2016-07-29
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
发明人： Jin Wuk Sung , Mingqi Li , Jong Keun Park , Joshua A. Kaitz , Vipul Jain , Chunyi Wu , Phillip D. Hustad
IPC分类号： G03F7/40 , C09D153/00 , G03F7/32 , G03F7/038 , G03F7/20 , G03F7/38
CPC分类号： G03F7/405 , C09D153/00 , G03F7/038 , G03F7/0397 , G03F7/20 , G03F7/32 , G03F7/325 , G03F7/38
摘要： A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

8. 发明授权

US09735023B2 Methods for manufacturing block copolymer compositions and articles manufactured therefrom 有权
公开(公告)号：US09735023B2
公开(公告)日：2017-08-15
申请号：US14745551
申请日：2015-06-22
申请人： DOW GLOBAL TECHNOLOGIES LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Jieqian Zhang , Phillip D. Hustad , Peter Trefonas, III , Mingqi Li , Valeriy V. Ginzburg , Jeffrey D. Weinhold
IPC分类号： C08L83/10 , C08L25/08 , H01L21/311 , C09D183/10 , G03F7/00 , H01L21/033 , C08G77/442 , B82Y40/00 , B82Y30/00
CPC分类号： H01L21/311 , B82Y30/00 , B82Y40/00 , C08G77/442 , C08L25/08 , C08L2205/025 , C08L2205/035 , C09D183/10 , G03F7/0002 , H01L21/0332 , H01L21/31116 , H01L21/31138 , C08L25/00 , C08L83/00
摘要： Disclosed herein is a composition comprising a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the weight percent based on total solids of the first block of the second block copolymer is greater than that of the first block of the first block copolymer; where the first block copolymer phase separates into a first morphology of cylindrical or lamellar domains when disposed singly on a substrate.

9. 发明授权

US09663682B2 Methods for manufacturing block copolymers and articles manufactured therefrom 有权
公开(公告)号：US09663682B2
公开(公告)日：2017-05-30
申请号：US14745548
申请日：2015-06-22
申请人： DOW GLOBAL TECHNOLOGIES LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Jieqian Zhang , Phillip D. Hustad , Peter Trefonas, III , Mingqi Li , Valeriy V. Ginzburg , Jeffrey D. Weinhold
IPC分类号： B32B7/02 , B05D3/02 , C09D183/10 , C08L83/10 , C08G77/442
CPC分类号： C09D183/10 , C08G77/442 , C08L83/10
摘要： Disclosed herein is an article comprising a substrate; upon which is disposed a composition comprising: a first block copolymer that comprises a first block and a second block; where the first block has a higher surface energy than the second block; a second block copolymer that comprises a first block and a second block; where the first block of the first block copolymer is chemically the same as or similar to the first block of the second block copolymer and the second block of the first block copolymer is chemically the same as or similar to the second block of the second block copolymer; where the first and the second block copolymer have a chi parameter greater than 0.04 at a temperature of 200° C.

10. 发明授权

US09802400B2 Orientation control layer formed on a free top surface of a first block copolymer from a mixture of first and second block copolymers 有权
公开(公告)号：US09802400B2
公开(公告)日：2017-10-31
申请号：US13925061
申请日：2013-06-24
申请人： Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
发明人： Peter Trefonas, III , Deyan Wang , Rahul Sharma , Phillip D. Hustad , Mingqi Li
IPC分类号： C08L53/00 , C08L63/00 , B32B43/00 , B05D7/00 , B05D1/18 , G03F7/00 , B32B27/08
CPC分类号： B32B43/00 , B05D1/185 , B05D7/52 , B32B27/08 , B32B2457/14 , C08F2438/03 , C08L53/00 , G03F7/0002 , Y10T428/24942
摘要： Disclosed herein is a method comprising disposing a first composition comprising a first block copolymer upon a substrate; where the first block copolymer comprises a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and disposing a second composition comprising an second copolymer upon a free surface of the first block copolymer; where the second copolymer comprises a surface free energy reducing moiety; where the surface free energy reducing moiety has a lower surface free energy than the first surface free energy and the second surface free energy; the second copolymer further comprising one or more moieties having an affinity to the first block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment.

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