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1. 发明申请

US20090218609A1 Semiconductor Memory Devices Including Offset Bit Lines 有权
标题翻译：包括偏移位线的半导体存储器件
公开(公告)号：US20090218609A1
公开(公告)日：2009-09-03
申请号：US12465202
申请日：2009-05-13
申请人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
发明人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
IPC分类号： H01L27/108
CPC分类号： H01L27/10814 , H01L27/0207 , H01L27/10882 , H01L27/11502
摘要： A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.
摘要翻译：半导体存储器件可以包括具有多个有源区的衬底，其中每个有源区具有在第一轴的方向上的长度和在第二轴的方向上的宽度。长度可以大于宽度，并且多个有源区可以在第二轴的方向上设置在多个有效区列中。可以在衬底上提供多个字线对，其中每个字线对跨越相应的有效区域列的有源区域，在相应字线对的字线之间限定每个有效区域的漏极部分。衬底上的多个位线可以跨过多个字线对，每个位线电耦合到每个列的有源区的相应漏极部分，并且每个位线布置在相应的漏极部分和另一个漏极部分的另一个漏极部分之间相同列的相邻有效区域。

2. 发明申请

US20060076599A1 Semiconductor memory devices including offset active regions 有权
公开(公告)号：US20060076599A1
公开(公告)日：2006-04-13
申请号：US11246594
申请日：2005-10-06
申请人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
发明人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
IPC分类号： H01L21/8238 , H01L29/94
CPC分类号： H01L27/11502 , H01L27/0207 , H01L27/10814 , H01L27/10852 , H01L27/10855
摘要： A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.

3. 发明授权

US08013374B2 Semiconductor memory devices including offset bit lines 有权
标题翻译：包括偏移位线的半导体存储器件
公开(公告)号：US08013374B2
公开(公告)日：2011-09-06
申请号：US12465202
申请日：2009-05-13
申请人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
发明人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
IPC分类号： H01L27/108
CPC分类号： H01L27/10814 , H01L27/0207 , H01L27/10882 , H01L27/11502
摘要： A semiconductor memory device may include a substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a respective drain portion of an active region of each column, and with each bitline being arranged between the respective drain portion and another drain portion of an adjacent active region of the same column.
摘要翻译：半导体存储器件可以包括具有多个有源区的衬底，其中每个有源区具有在第一轴的方向上的长度和在第二轴的方向上的宽度。长度可以大于宽度，并且多个有源区可以在第二轴的方向上设置在多个有效区列中。可以在衬底上提供多个字线对，其中每个字线对跨越相应的有效区域列的有源区域，在相应字线对的字线之间限定每个有效区域的漏极部分。衬底上的多个位线可以跨过多个字线对，每个位线电耦合到每个列的有源区的相应漏极部分，并且每个位线布置在相应的漏极部分和另一个漏极部分的另一个漏极部分之间相同列的相邻有效区域。

4. 发明授权

US07547936B2 Semiconductor memory devices including offset active regions 有权
标题翻译：包括偏移活动区域的半导体存储器件
公开(公告)号：US07547936B2
公开(公告)日：2009-06-16
申请号：US11246594
申请日：2005-10-06
申请人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
发明人： Doo-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
IPC分类号： H01L271/108
CPC分类号： H01L27/11502 , H01L27/0207 , H01L27/10814 , H01L27/10852 , H01L27/10855
摘要： A semiconductor memory device may include a substrate having a plurality of active regions and a field isolation layer on the substrate surrounding the active regions of the substrate. Each of the plurality of active regions may have a length in a direction of a first axis and a width in a direction of a second axis, and the length may be greater than the width. The plurality of active regions may be provided in a plurality of columns of active regions in the direction of the second axis, and active regions of adjacent columns may be offset in the direction of the second axis.
摘要翻译：半导体存储器件可以包括具有多个有源区的衬底和围绕衬底的有源区的衬底上的场隔离层。多个有源区域中的每一个可以具有在第一轴线的方向上的长度和在第二轴线的方向上的宽度，并且该长度可以大于宽度。多个有源区域可以沿着第二轴线的方向设置在多个活性区域列中，并且相邻列的有效区域可以在第二轴线的方向上偏移。

5. 发明申请

US20090218654A1 Semiconductor Memory Devices Including Extended Memory Elements 审中-公开
标题翻译：包括扩展内存元素的半导体存储器件
公开(公告)号：US20090218654A1
公开(公告)日：2009-09-03
申请号：US12465261
申请日：2009-05-13
申请人： Don-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
发明人： Don-Hoon Goo , Han-Ku Cho , Joo-Tae Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
IPC分类号： H01L29/06 , H01L29/68
CPC分类号： H01L27/10814 , H01L27/0207 , H01L27/10882 , H01L27/11502
摘要： A semiconductor memory device may include a semiconductor substrate having an active region thereof, and the active region may have a length and a width, with the length being greater than the width. A field isolation layer may be on the semiconductor substrate surrounding the active region. First and second wordlines may be on the substrate crossing the active region, with the first and second wordlines defining a drain portion of the active region between the first and second wordlines and first and second source portions of the active region at opposite ends of the active region. First and second memory storage elements may be respectively coupled to the first and second source portions of the active region, with the first and second wordlines being between portions of the respective first and second memory storage elements and the active region in a direction perpendicular to a surface of the substrate.
摘要翻译：半导体存储器件可以包括具有其有源区的半导体衬底，并且有源区可以具有长度和宽度，其长度大于宽度。场隔离层可以在围绕有源区的半导体衬底上。第一和第二字线可以在与有源区交叉的衬底上，其中第一和第二字线限定在第一和第二字线之间的有源区的漏极部分和有源区的第一和第二源极部分在有源区域的相对端处地区。第一和第二存储器存储元件可以分别耦合到有源区域的第一和第二源极部分，其中第一和第二字线在相应的第一和第二存储器存储元件的部分之间，并且有源区域在垂直于基板的表面。

6. 发明授权

US06844134B2 Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist composition comprising the same 有权
标题翻译：具有氟化乙二醇基团的光敏聚合物和包含其的化学放大抗蚀剂组合物
公开(公告)号：US06844134B2
公开(公告)日：2005-01-18
申请号：US10289108
申请日：2002-11-05
申请人： Sang-Jun Choi , Joo-Tae Moon , Sang-Gyun Woo , Kwang-Sub Yoon , Ki-Yong Song
发明人： Sang-Jun Choi , Joo-Tae Moon , Sang-Gyun Woo , Kwang-Sub Yoon , Ki-Yong Song
IPC分类号： C08F20/26 , C08F212/14 , C08F220/10 , C08F220/42 , C08F232/04 , G03F7/004 , G03F7/039 , H01L21/027 , C08F214/18
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0395 , Y10S430/111
摘要： A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows: wherein R1 is a hydrogen atom or methyl group, and R2 is a fluorinated ethylene glycol group having 3 to 10 carbon atoms.
摘要翻译：光敏聚合物包含氟化乙二醇基团和包含光敏聚合物的化学放大抗蚀剂组合物。感光性聚合物的重均分子量为约3,000〜50,000，具有如下重复单元：其中，R 1为氢原子或甲基，R 2为碳原子数3〜10的氟化乙二醇基。

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