专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010113356A Pattern forming method 审中-公开
标题翻译：图案形成方法
公开(公告)号：JP2010113356A
公开(公告)日：2010-05-20
申请号：JP2009253372
申请日：2009-11-04
申请人： Dongjin Semichem Co Ltd , 東進セミケム株式会社Dongjin Semichem Co.,Ltd.
发明人： KIM DONG-MIN , LEE WON YOUNG , LEE KI MAN , KIM SUNG KI , CHOI KI SIK , JA-GARU YUN , KIM JEONG WON , BYEON CHEOL KI , SHIN JAE HO , BYUN JA-FUN
IPC分类号： G03F7/095 , G03F7/023 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method for stably forming a profile of an undercut feature suitable for a special process such as a lift-off process by using a positive photoresist composition having an adjustable sensitization speed.
SOLUTION: The present invention relates to a pattern forming method for a display element for forming a profile of an undercut feature applicable to a lift-off process. The profile of an undercut feature can be easily formed upon forming a multilayer photoresist, by using a polymer compound having a specified structure and controlling the sensitization speed to be rapid. Thereby, it is applicable to the lift-off process, and even a thick pattern can be formed. Since an etching process can be omitted in the process, process simplification can be achieved.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种图案形成方法，用于通过使用具有可调节的致敏速度的正性光致抗蚀剂组合物来稳定地形成适合于特殊工艺（例如剥离处理）的底切特征的轮廓。解决方案：本发明涉及一种用于形成可应用于剥离过程的底切特征的轮廓的显示元件的图案形成方法。通过使用具有特定结构的高分子化合物和敏化速度快速控制，可以容易地在形成多层光致抗蚀剂时形成底切特征的轮廓。由此，可以适用于剥离处理，也可以形成厚的图案。由于在该过程中可以省略蚀刻工艺，因此可以实现工艺简化。版权所有（C）2010，JPO＆INPIT

IPRDB

热门服务

关于我们

友情链接

联系方式