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1. 发明专利

JP2009024172A Acid-amplifier having acetal group, and photoresist composition containing the same 有权
标题翻译：具有乙酰基的酸式放大器和含有该组合物的光学组合物
公开(公告)号：JP2009024172A
公开(公告)日：2009-02-05
申请号：JP2008185640
申请日：2008-07-17
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： LEE JUNG-YOUL , YOO MIN-JA , KIM JEONG-SIK , LIM YOUNG-BAE , LEE JAE-WOO , KIM JAE-HYUN
IPC分类号： C09K3/00 , C07D317/72 , C07D339/06 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C07D317/72 , C07D339/06 , G03F7/0045 , G03F7/0397 , Y10S430/123
摘要： PROBLEM TO BE SOLVED: To provide an acid-amplifier having an acetal group, and a photoresist composition containing the acid-amplifier improving line edge roughness of a photoresist pattern and photoresist energy sensitivity by producing secondary acid in a heating process after exposure by acid generated from a photo-acid generator during exposure.
SOLUTION: The acid-amplifier has a structure of a chemical formula 1, wherein R is a 4-20C monocyclic or polycyclic saturated hydrocarbon, R
1 is 1-10C linear hydrocarbon, a 1-10C perfluoro compound residue or a 5-20C aromatic compound residue, Ra and Rb are independently hydrogen atoms or 1-4C saturated hydrocarbon, and A is independently oxygen atoms (O) or sulfur atoms (S).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有缩醛基团的酸性放大器和包含酸性放大器的光致抗蚀剂组合物，其在曝光后的加热过程中通过产生二次酸而改善光致抗蚀剂图案的线边缘粗糙度和光致抗蚀剂能量敏感性在曝光期间由光酸发生器产生的酸。解决方案：酸放大器具有化学式1的结构，其中R是4-20C单环或多环饱和烃，R 1 SB是1-10C直链烃，1- 10C全氟化合物残基或5-20C芳族化合物残基，Ra和Rb独立地为氢原子或1-4C饱和烃，A独立地为氧原子（O）或硫原子（S）。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2006188681A Organic polymer for forming organic antireflection film 审中-公开
标题翻译：用于形成有机抗反射膜的有机聚合物
公开(公告)号：JP2006188681A
公开(公告)日：2006-07-20
申请号：JP2005366441
申请日：2005-12-20
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： KIM SANG-JUNG , KIM JONG-YONG , KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： C08G65/22 , C08L71/02 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091 , C08G65/22
摘要： PROBLEM TO BE SOLVED: To provide an organic polymer for an organic antireflection film for forming the organic antireflection film positioned between an etched layer and a photoresist film for absorbing an exposure source in a photolithography process and to provide an organic composition containing the above polymer. SOLUTION: The organic polymer for forming the organic antireflection film comprises repeating units represented by the formula (1) and the formula (2) [in the formula, R 1 is hydrogen or a methyl group and R 2 is 1-5C alkyl group]. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成有机抗反射膜的有机抗反射膜的有机聚合物，其用于在光刻工艺中定位在蚀刻层和用于吸收曝光源的光致抗蚀剂膜之间，并提供含有以上聚合物。解决方案：用于形成有机抗反射膜的有机聚合物包含由式（1）和式（2）表示的重复单元[式中，R SB 1是氢或甲基并且R SB 2是1-5C烷基]。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2008045125A Photosensitive polymer for extreme ultraviolet ray and deep ultraviolet ray and photoresist composition containing the same 审中-公开
标题翻译：用于超级紫外线和深紫外线的光敏聚合物和含有它的光致抗蚀剂组合物
公开(公告)号：JP2008045125A
公开(公告)日：2008-02-28
申请号：JP2007209553
申请日：2007-08-10
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： C08F212/14 , C08F220/34 , G03F7/039 , H01L21/027
CPC分类号： C08G61/02 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive polymer able to form fine patterns responding to extreme ultraviolet rays and deep ultraviolet rays, greatly reduce LER (line edge roughness) after development and improve safety of the line width of a formed pattern and a photoresist composition containing the same.
SOLUTION: The photosensitive polymer for extreme ultraviolet rays and deep ultraviolet rays comprises a repeating unit expressed by chemical formula (1) [wherein R
1 and R
1 ' express each independently H, methyl or trifluoromethyl; R
2 expresses chemical formula (1-1)].
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够对极紫外线和深紫外线形成微细图案的光敏聚合物，显影后大大降低了LER（线边缘粗糙度），并提高了形成图案的线宽度的安全性，含有该组合物的光致抗蚀剂组合物。解决方案：用于极紫外线和深紫外线的光敏聚合物包括由化学式（1）表示的重复单元[其中R 1 和R 1表示各自独立地为H，甲基或三氟甲基; R 2 表示化学式（1-1）]。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2010212656A Method of forming fine pattern of semiconductor device 审中-公开
标题翻译：形成半导体器件精细图案的方法
公开(公告)号：JP2010212656A
公开(公告)日：2010-09-24
申请号：JP2009254938
申请日：2009-11-06
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： LEE JUN-GYEONG , LEE JUNG-YOUL , KIM JEONG-SIK , JANG EU-JEAN , LEE JAE-WOO , KIM DEOG-BAE , KIM JAE-HYUN
IPC分类号： H01L21/027 , G03F7/039 , G03F7/11 , G03F7/40
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0752 , G03F7/70466 , H01L21/0273
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a fine pattern of a semiconductor device.
SOLUTION: The method of manufacturing the fine pattern of the semiconductor device using a double exposure patterning process capable of forming a secondary photoresist pattern by simple exposure without using an exposure mask is disclosed. The method includes: a step of forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; a step of coating a composition of a mirror-interlayer film on the first photoresist pattern to form the mirror-interlayer film; a step of forming a second photoresist film on the resultant film; and a step of forming a second photoresist pattern which is made by irregular reflection of the mirror-interlayer film between the first photoresist patterns, by exposing the second photoresist film to light having energy lower than the threshold energy E
th of the second photoresist film without using an exposure mask, and then developing the second photoresist film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成半导体器件的精细图案的方法。公开了使用能够通过简单曝光而不使用曝光掩模形成二次光致抗蚀剂图案的双曝光图案形成工艺来制造半导体器件的精细图案的方法。该方法包括：在其上形成有被蚀刻层的半导体衬底上形成第一光致抗蚀剂图案的步骤; 在第一光致抗蚀剂图案上涂布镜面 - 中间膜的组合物以形成镜面 - 中间膜的步骤; 在所得膜上形成第二光致抗蚀剂膜的步骤; 以及通过将第二光致抗蚀剂膜暴露于具有低于阈值能量E SB的能量的光而形成第二光致抗蚀剂图案的步骤，该第二光致抗蚀剂图案通过在第一光致抗蚀剂图案之间的镜面 - 中间膜的不规则反射而制成不使用曝光掩模，然后显影第二光致抗蚀剂膜。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008163333A Polymer for forming organic anti-reflective coating film and composition including the same 审中-公开
标题翻译：用于形成有机抗反射涂膜的聚合物及其组合物
公开(公告)号：JP2008163333A
公开(公告)日：2008-07-17
申请号：JP2007331730
申请日：2007-12-25
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： KIM SANG-JUNG , ROH HYO-JUNG , PARK JONG-KYOUNG , KIM JEONG-SIK , KIM HYUN-JIN , KIM JAE-HYUN
IPC分类号： C08G77/14 , C08G77/44 , C08K5/13 , C08L83/10 , G03F7/004 , G03F7/075 , G03F7/11 , G03F7/40
CPC分类号： G03F7/091 , C08G77/045 , C08G77/38 , C09D183/04 , G03F7/0752 , Y10S438/952
摘要： PROBLEM TO BE SOLVED: To provide a polymer for forming an organic anti-reflective coating film having a siloxane group in the main chain, and to provide a composition for forming organic anti-reflective coating film comprising the same. SOLUTION: The polymer for forming organic anti-reflective coating film is represented by the chemical formula, wherein R represents a hydrogen atom, a 1-20C alkyl group, a 1-10C alcohol group or an epoxy group, R 1 is an ester-containing group having each independently represents a hydrogen atom, a polyhedral oligomeric silsesquioxane, a carboxyl group, a 1-10C alcohol group or an ester group-containing group having an epoxy group. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成在主链中具有硅氧烷基团的有机抗反射涂膜的聚合物，并提供用于形成包含该聚合物的有机抗反射涂膜的组合物。解决方案：用于形成有机抗反射涂膜的聚合物由化学式表示，其中R表示氢原子，1-20C烷基，1-10C醇基或环氧基，R 1 是各自独立地表示氢原子的含酯基团，多面体低聚倍半硅氧烷，羧基，1-10C醇基或含有环氧基的含酯基团。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2010001472A Polymer dissolvable in alkali solution for forming organic antireflection film and composition containing the same 审中-公开
标题翻译：用于形成有机抗反射膜的ALKALI溶液中的聚合物和包含其的组合物
公开(公告)号：JP2010001472A
公开(公告)日：2010-01-07
申请号：JP2009142875
申请日：2009-06-16
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： KIM HYUN JIN , KIM JAE-HYUN , ROH HYO-JUNG , HAN MAN HO , JU DONG KYU
IPC分类号： C08F220/26 , C08F220/20 , C08F228/02 , C08K5/107 , C08L33/06 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091 , C08F2220/281 , C08F2220/382 , C08K5/134 , C09D5/006 , C09D133/066 , C08L33/06 , C08F222/1006
摘要： PROBLEM TO BE SOLVED: To provide a polymer dissolvable in an alkali solution for forming an organic antireflection film; and a composition containing the same. SOLUTION: This polymer dissolvable in an alkali solution for forming the organic antireflection film can be produced by the steps of (i) obtaining a glycol dimethylenechloride monomer by reacting a glycol compound, containing an alkylene group or a cycloalkylene group which may include a heteroelement, with paraformaldehyde and hydrogen chloride (HCl) gas, obtaining an unsaturated ethylenic monomer by reacting the glycol dimethylenechloride monomer with methacrylic acid and triethylamine (TEA); (ii) obtaining an unsaturated ethylenic monomer having a group containing sulfur (S), oxygen (O) and a hydroxy group at a terminal of the 1-20C chain by reacting a glycol compound, containing an alkylene group or a cycloalkylene group which may include a heteroelement, with a methacrylic halide and triethylamine (TEA); and then (iii) polymerizing the product of reaction (i) and the product of reaction (ii). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可溶于碱溶液中以形成有机抗反射膜的聚合物; 和含有该组合物的组合物。解决方案：可用于形成有机抗反射膜的碱溶液中可溶解的聚合物可以通过以下步骤制备：（i）通过使包含亚烷基或亚环烷基的二醇化合物与二醇二甲基氯单体通过多聚甲醛和氯化氢（HCl）气体，通过使二醇二氯甲烷单体与甲基丙烯酸和三乙胺（TEA）反应获得不饱和烯属单体; （ii）通过使含有亚烷基的二元醇化合物或亚环烷基，可以在1-20C链的末端得到具有硫（S），氧（O）和羟基的基团的不饱和乙烯性单体，包括异构元件，与甲基丙烯酸卤化物和三乙胺（TEA）; 然后（iii）使反应（i）的产物和反应（ii）的产物聚合。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009069829A Dissolution accelerator and photoresist composition including the same 审中-公开
标题翻译：溶解助催化剂和包含其的光电组合物
公开(公告)号：JP2009069829A
公开(公告)日：2009-04-02
申请号：JP2008234609
申请日：2008-09-12
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： HAN DONG-WOO , KIM JEONG-SIK , YOO MIN-JA , LEE JAE-WOO , KIM JAE-HYUN
IPC分类号： G03F7/004 , C07C67/10 , C07C69/708 , C07C69/74 , C07C69/75 , C07C69/753 , C07C69/757 , C07D487/22 , C07J9/00 , G03F7/039 , H01L21/027
CPC分类号： C07C69/74 , C07C69/00 , C07C69/75 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C07D207/12 , C07D209/32 , C07D211/40 , G03F7/0392 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a dissolution accelerator and a photoresist composition, including the dissolution accelerator that can increase the difference in the solubility, between an exposed part and an unexposed part in forming a fine pattern, using a photolithographic process.
SOLUTION: The dissolution accelerator has a structure represented by formula 1 (wherein R is a 1-40C hydrocarbon group, A is a 1-10C alkyl group, p is 0 or 1, and q is an integer of 1 to 20). The photoresist composition includes 3-30 wt.% of a photosensitive polymer, 1-30 pts.wt. of the dissolution accelerator expressed by the formula, with respect to 100 pts.wt. of the photosensitive polymer, 0.05-10 pts.wt. of a photoacid generator with respect to 100 pts.wt. of the photosensitive polymer, and a remaining organic solvent.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种溶解促进剂和光致抗蚀剂组合物，其包括溶解促进剂，其可以使用光刻工艺在形成微细图案时增加曝光部分和未曝光部分之间的溶解度差异。溶解促进剂具有由式1表示的结构（其中R为1-40C烃基，A为1-10C烷基，p为0或1，q为1至20的整数））。光致抗蚀剂组合物包括3-30重量％的光敏聚合物，1-30重量份的由式表示的溶解促进剂，相对于100重量份的光敏聚合物，0.05-10重量份的光酸产生剂相对于100重量份的光敏聚合物和剩余的有机溶剂。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009067795A Photosensitive compound and photoresist composition containing the same 审中-公开
标题翻译：光敏化合物和含有它们的光催化组合物
公开(公告)号：JP2009067795A
公开(公告)日：2009-04-02
申请号：JP2008236337
申请日：2008-09-16
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： LEE JAE-WOO , YOO MIN-JA , LEE JUN-GYEONG , LIM YOUNG-BAE , KIM JAE-HYUN
IPC分类号： C07C43/205 , C07C69/42 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , C07C43/2055 , C07C43/30 , C07C65/24 , C07C69/42 , C07C2601/14 , C07C2603/74 , G03F7/0392 , Y10S430/115
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive compound being smaller in size than a common photoresist polymer and having a better-defined (uniform) structure and to provide a photoresist composition having the same.
SOLUTION: The photosensitive compound has a structure of formula 1. Further, the photoresist composition comprises 1-85 wt.% photosensitive compound represented by formula 1, 0.05-15 pts.wt., per 100 pts.wt. photosensitive compound, photo-acid generator, and 200-5,000 pts.wt. organic solvent. In formula 1, x is 1, 2, 3, 4, or 5; y is 2, 3, 4, 5, or 6; and R and R', which are independent of each other, are each a 1-30C straight-chain aliphatic hydrocarbon group, a cycloaliphatic hydrocarbon group, or an aromatic hydrocarbon group.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供尺寸小于普通光致抗蚀剂聚合物并具有更好限定（均匀）结构并提供具有该光致抗蚀剂聚合物的光致抗蚀剂组合物的光敏化合物。光敏性化合物具有式1的结构。此外，光致抗蚀剂组合物包含1-85重量％的由式1表示的光敏化合物，0.05-15重量份/ 100重量份。光敏化合物，光酸发生剂和200-5,000重量份有机溶剂。在式1中，x是1,2,3,4或5; y为2,3,4,5或6; 和R和R'彼此独立地为1-30C直链脂肪族烃基，脂环族烃基或芳香族烃基。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008069351A Photoresist monomer, polymer, and photoresist composition containing the same 审中-公开
标题翻译：光聚合单体，聚合物和含有它们的光电组合物
公开(公告)号：JP2008069351A
公开(公告)日：2008-03-27
申请号：JP2007233545
申请日：2007-09-10
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： KIM DEOG-BAE , LEE JUNG-YOUL , YU GEUN-JONG , KIM SANG-JUNG , LEE JAE-WOO , KIM JAE-HYUN
IPC分类号： C08F12/34 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , C07C309/00 , C07C2601/08 , C07C2601/14 , C07C2602/22 , C07C2602/42 , C07C2603/24 , C07C2603/74 , C07D307/32 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a photoresist and polymer monomer which have an oxime group; and a photoresist composition containing the same. SOLUTION: The photoresist monomer is represented by the chemical formula: wherein R * are independently a hydrogen atom or a methyl group, and R is either a substituted or unsubstituted 1-25C alkyl group with or without an ether group, or a substituted or unsubstituted 4-25C hydrocarbon group with an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group and with or without an ether group, a ketone group or sulfur. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2009120612A Photosensitive compound and photoresist composition containing the same 审中-公开
标题翻译：光敏化合物和含有它们的光催化组合物
公开(公告)号：JP2009120612A
公开(公告)日：2009-06-04
申请号：JP2008290716
申请日：2008-11-13
申请人： Dongjin Semichem Co Ltd , ドンジンセミケムカンパニーリミテッド
发明人： KIM JUNG WOO , KIM DEOG BAE , KIM JAE-HYUN
IPC分类号： C07C69/94 , C08G65/48 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , C07C69/94 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C08G65/3315 , C08G65/3326 , C08G65/3346 , G03F7/0392
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive compound forming a nano-sized assembly which is a molecular resist of a molecule smaller than conventionally used polymers for photoresists, and a photoresist composition containing the same. SOLUTION: The photosensitive compound has a structure represented by the chemical formula. The photoresist composition comprises 1-85 wt.% of the photosensitive compound and 0.05-15 pts.wt. of a photoacid generator per 100 pts.wt. of the photosensitive compound and 50-5,000 pts.wt. of organic solvents per 100 pts.wt. of the photosensitive compound, wherein n is an integer of 1-40 and is a repeating number of the isopropyl oxide monomer unit (-CH(CH 3 )CH 2 O-), and R is a 1-20C alkyl group or 3-20C cycloalkyl group. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成纳米尺寸组件的光敏化合物，其是比常规使用的光致抗蚀剂聚合物小的分子的分子抗蚀剂，以及含有它们的光致抗蚀剂组合物。光敏化合物具有由化学式表示的结构。光致抗蚀剂组合物包含1-85wt。％的光敏化合物和0.05-15wt。的光酸产生剂每100重量份的光敏化合物和50-5,000重量份的有机溶剂每100重量份的光敏化合物，其中n为1-40的整数，为异丙基氧化物单体单元的重复数（-CH（CH 3）3 CH 2）CH 2，），R为1-20C烷基或3-20C环烷基。版权所有（C）2009，JPO＆INPIT

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