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1. 发明申请

US20080158940A1 Non-volatile memory device and method of operating the same 失效
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20080158940A1
公开(公告)日：2008-07-03
申请号：US11980357
申请日：2007-10-31
申请人： Dong-seok Suh , Jun-ho Lee
发明人： Dong-seok Suh , Jun-ho Lee
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/02 , G11C2013/0073 , G11C2213/56 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , Y10S977/754
摘要： Provided are a non-volatile memory device and a method of operating the non-volatile memory device. The non-volatile memory device includes a switching device and a storage node connected to the switching device, wherein the storage node comprises: a first electrode connected to the switching device; a chalcogenide material layer formed on the first electrode; and a second electrode formed on the chalcogenide material layer, and one of the first and second electrodes comprises an electrode contact layer formed adjacent to a limited region of the chalcogenide material layer, and a property of the electrode region adjacent to the chalcogenide material layer is changed reversibly according to the direction in which a current is applied, thereby changing between a high resistance state and a low resistance state.
摘要翻译：提供了非易失性存储器件和操作非易失性存储器件的方法。所述非易失性存储器件包括连接到所述开关器件的开关器件和存储节点，其中所述存储节点包括：连接到所述开关器件的第一电极; 形成在第一电极上的硫族化物材料层; 和形成在硫族化物材料层上的第二电极，第一和第二电极中的一个电极包括与硫族化物材料层的有限区域相邻形成的电极接触层，与硫族化物材料层相邻的电极区域的性质是根据施加电流的方向可逆地改变，从而在高电阻状态和低电阻状态之间变化。

2. 发明授权

US08054672B2 Non-volatile memory device and method of operating the same 失效
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US08054672B2
公开(公告)日：2011-11-08
申请号：US11980357
申请日：2007-10-31
申请人： Dong-seok Suh , Jun-ho Lee
发明人： Dong-seok Suh , Jun-ho Lee
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/02 , G11C2013/0073 , G11C2213/56 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , Y10S977/754
摘要： Provided are a non-volatile memory device and a method of operating the non-volatile memory device. The non-volatile memory device includes a switching device and a storage node connected to the switching device, wherein the storage node comprises: a first electrode connected to the switching device; a chalcogenide material layer formed on the first electrode; and a second electrode formed on the chalcogenide material layer, and one of the first and second electrodes comprises an electrode contact layer formed adjacent to a limited region of the chalcogenide material layer, and a property of the electrode region adjacent to the chalcogenide material layer is changed reversibly according to the direction in which a current is applied, thereby changing between a high resistance state and a low resistance state.
摘要翻译：提供了非易失性存储器件和操作非易失性存储器件的方法。所述非易失性存储器件包括连接到所述开关器件的开关器件和存储节点，其中所述存储节点包括：连接到所述开关器件的第一电极; 形成在第一电极上的硫族化物材料层; 和形成在硫族化物材料层上的第二电极，第一和第二电极中的一个电极包括与硫族化物材料层的有限区域相邻形成的电极接触层，与硫族化物材料层相邻的电极区域的性质是根据施加电流的方向可逆地改变，从而在高电阻状态和低电阻状态之间变化。

3. 发明授权

US08218359B2 Phase change random access memory and methods of manufacturing and operating same 有权
标题翻译：相变随机存取存储器及其制造和操作方法相同
公开(公告)号：US08218359B2
公开(公告)日：2012-07-10
申请号：US12455007
申请日：2009-05-27
申请人： Dong-seok Suh
发明人： Dong-seok Suh
IPC分类号： G11C11/00
CPC分类号： H01L45/144 , G11C13/0004 , G11C13/0069 , G11C2013/009 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/143 , H01L45/148 , H01L45/1683
摘要： A phase change memory device includes a switching device, a phase change storage node connected to the switching device, and a gate electrode which is spaced apart from the phase change storage node and increases an electrical resistance of the storage node during a reset programming operation. The gate electrode may be disposed around the phase change storage node, and may be used for applying an electric field to the phase change storage node.
摘要翻译：相变存储器件包括开关器件，连接到开关器件的相变存储节点和与相变存储节点间隔开的栅电极，并且在复位编程操作期间增加存储节点的电阻。栅电极可以设置在相变存储节点周围，并且可以用于向相变存储节点施加电场。

4. 发明授权

US07521704B2 Memory device using multi-layer with a graded resistance change 有权
标题翻译：存储器件使用多层具有分级电阻变化
公开(公告)号：US07521704B2
公开(公告)日：2009-04-21
申请号：US11116332
申请日：2005-04-28
申请人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
发明人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
IPC分类号： H01L29/02
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.
摘要翻译：提供了使用具有分级电阻变化的多层的存储器件。存储器件包括：下电极; 数据存储层位于下电极上并具有分级电阻变化; 并且上电极位于数据存储层上。

5. 发明申请

US20080149908A1 Doped phase change material and pram including the same 有权
标题翻译：掺杂相变材料和婴儿车包括相同
公开(公告)号：US20080149908A1
公开(公告)日：2008-06-26
申请号：US11980431
申请日：2007-10-31
申请人： Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
发明人： Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
IPC分类号： H01L45/00 , C01B19/00
CPC分类号： C01B19/007 , C01P2002/52 , C01P2006/33 , C01P2006/34 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141
摘要： Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100−(X+Y+Z). The index X of indium (In) is in the range of 25 wt %≦X≦60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %≦Y≦17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %
摘要翻译：提供了掺杂相变材料和包括相变材料的相变存储器件。可以掺杂有Se的相变材料具有比Ge 2 Sb 2 Sb 5（GST）材料更高的结晶温度。相变材料可以是在<！ - SIPO - >中，Z 100，（X + Y + Z）。铟（In）的指数X在25重量％<= X <= 60重量％的范围内。锑（Sb）的指数Y在1重量％<= Y <17重量％的范围内。碲（Te）的指数Z在0重量％

6. 发明申请

US20050247921A1 Memory device using multi-layer with a graded resistance change 有权
标题翻译：存储器件使用多层具有分级电阻变化
公开(公告)号：US20050247921A1
公开(公告)日：2005-11-10
申请号：US11116332
申请日：2005-04-28
申请人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
发明人： Myoung-jae Lee , In-kyeong Yoo , Sun-ae Seo , Dong-seok Suh , David Seo , Sang-hun Jeon
IPC分类号： H01L27/10 , H01L27/115 , H01L27/24 , H01L29/02 , H01L45/00
CPC分类号： G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.
摘要翻译：提供了使用具有分级电阻变化的多层的存储器件。存储器件包括：下电极; 数据存储层位于下电极上并具有分级电阻变化; 并且上电极位于数据存储层上。

7. 发明授权

US07696507B2 Storage nodes, phase change memory devices, and methods of manufacturing the same 有权
标题翻译：存储节点，相变存储器件及其制造方法
公开(公告)号：US07696507B2
公开(公告)日：2010-04-13
申请号：US11907844
申请日：2007-10-18
申请人： Yoon-ho Khang , Ki-joon Kim , Dong-seok Suh
发明人： Yoon-ho Khang , Ki-joon Kim , Dong-seok Suh
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： A storage node may include a bottom electrode contact layer, a phase change layer connected to the bottom electrode contact layer, and a top electrode layer connected to the phase change layer. The bottom electrode contact layer may protrude toward the phase change layer. A phase change memory device may include a switching device and the storage node. The switching device may be connected to the bottom electrode contact layer. A method of manufacturing the storage node may include forming a via hole in an insulating interlayer, at least partially filling the via hole to form a bottom electrode contact layer, protruding the bottom electrode contact layer from the via hole, and forming a phase change layer that covers the bottom electrode contact layer. A method of manufacturing a phase change memory device may include forming the switching device on a substrate and manufacturing the storage node.
摘要翻译：存储节点可以包括底部电极接触层，连接到底部电极接触层的相变层和连接到相变层的顶部电极层。底部电极接触层可以向相变层突出。相变存储器件可以包括切换装置和存储节点。开关器件可以连接到底部电极接触层。制造存储节点的方法可以包括在绝缘中间层中形成通孔，至少部分地填充通孔以形成底电极接触层，从底孔电极接触层从通孔突出，并形成相变层覆盖底部电极接触层。相变存储器件的制造方法可以包括在基板上形成开关器件并制造存储节点。

8. 发明申请

US20080023686A1 Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same 审中-公开
标题翻译：存储节点，包括掺杂相变层的相变存储器及其操作和制造方法
公开(公告)号：US20080023686A1
公开(公告)日：2008-01-31
申请号：US11822319
申请日：2007-07-05
申请人： Jin-seo Noh , Ki-jun Kim , Yoon-ho Khang , Woong-chul Shin , Dong-seok Suh
发明人： Jin-seo Noh , Ki-jun Kim , Yoon-ho Khang , Woong-chul Shin , Dong-seok Suh
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/144
摘要： Example embodiments may provide a doped phase change layer and a method of operating and fabricating a phase change memory with the example embodiment doped phase change layer. The phase change memory may include a storage node having a phase change layer and a switching device, wherein the phase change layer includes indium with a concentration ranging from about 5 at % to about 15 at %. The phase change layer may be a GST layer that includes indium. The phase change layer may be a GST layer that includes gallium.
摘要翻译：示例性实施例可以提供掺杂相变层以及使用示例性实施例的掺杂相变层来操作和制造相变存储器的方法。相变存储器可以包括具有相变层和开关器件的存储节点，其中相变层包括浓度范围为约5at％至约15at％的铟。相变层可以是包括铟的GST层。相变层可以是包括镓的GST层。

9. 发明申请

US20060266993A1 Phase change random access memory devices and methods of operating the same 有权
标题翻译：相变随机存取存储器件及其操作方法
公开(公告)号：US20060266993A1
公开(公告)日：2006-11-30
申请号：US11443309
申请日：2006-05-31
申请人： Dong-seok Suh , Yong-young Park , Tae-sang Park , Yoon-ho Khang
发明人： Dong-seok Suh , Yong-young Park , Tae-sang Park , Yoon-ho Khang
IPC分类号： H01L47/00
CPC分类号： H01L45/143 , G11C2213/52 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1286 , H01L45/144 , H01L45/1675
摘要： Provided are phase change random access memory (PRAM) devices and methods of operating the same. The PRAM device may include a switching device, a lower electrode, a lower electrode contact layer, a phase change layer and/or an upper electrode. The lower electrode may be connected to a switching device. The lower electrode contact layer may be formed on the lower electrode. The phase change layer, which may include a bottom surface that contacts an upper surface of the lower electrode contact layer, may be formed on the lower electrode contact layer. The upper electrode may be formed on the phase change layer. The lower electrode contact layer may be formed of a material layer having an absolute value of a Seebeck coefficient higher than TiAlN. The Seebeck coefficient of the lower electrode contact layer may be negative. The material layer may have lower heat conductivity and/or approximately equivalent electrical resistance as TiAlN.
摘要翻译：提供了相移随机存取存储器（PRAM）装置及其操作方法。 PRAM器件可以包括开关器件，下电极，下电极接触层，相变层和/或上电极。下电极可以连接到开关装置。下电极接触层可以形成在下电极上。可以在下电极接触层上形成可包括与下电极接触层的上表面接触的底面的相变层。上电极可以形成在相变层上。下电极接触层可以由绝缘值高于TiAlN的塞贝克系数的材料层形成。下电极接触层的塞贝克系数可以为负。该材料层可具有比TiAlN更低的导热性和/或近似等效的电阻。

10. 发明申请

US20060152186A1 Method of operating and structure of phase change random access memory (PRAM) 有权
标题翻译：相变随机存取存储器（PRAM）的操作和结构方法
公开(公告)号：US20060152186A1
公开(公告)日：2006-07-13
申请号：US11329171
申请日：2006-01-11
申请人： Dong-seok Suh , Yoon-ho Khang , Sang-mock Lee , Jin-seo Noh
发明人： Dong-seok Suh , Yoon-ho Khang , Sang-mock Lee , Jin-seo Noh
IPC分类号： G05B19/29
CPC分类号： G11C13/0004 , G11C11/5678 , G11C13/0069 , G11C2013/0078 , G11C2213/79
摘要： Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.
摘要翻译：提供了一种操作包括切换装置和包括相变层的存储节点的相变随机存取存储器的方法。该方法包括从相变层的下部向相变层的上部施加通过相变层的复位电流，并向存储节点施加小于1.6mA的改变相变层的一部分的复位电流变成无定形状态。设定电压是示例性实施例的相反方向，并且连接器具有小的横截面积。

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