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1. 发明授权

US08043925B2 Method of forming capacitor of semiconductor memory device 有权
标题翻译：形成半导体存储器件电容器的方法
公开(公告)号：US08043925B2
公开(公告)日：2011-10-25
申请号：US12591072
申请日：2009-11-06
申请人： Dong-kwan Yang , Seong-ho Kim , Won-mo Park , Gil-sub Kim
发明人： Dong-kwan Yang , Seong-ho Kim , Won-mo Park , Gil-sub Kim
IPC分类号： H01L21/20
CPC分类号： H01L27/10817 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/10855
摘要： A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold layer, sequentially forming a plurality of line-shaped first mask patterns, a second sacrificial layer, and then second mask patterns on the support structures and on the first sacrificial layer, removing the second sacrificial layer, the first sacrificial layer, and the mold layer using the first mask patterns, the second mask patterns, and the support structures as masks, removing the first mask patterns and second mask patterns, filling the storage node electrode holes with a conductive material and etching back the conductive material to expose the support structures, and removing the first sacrificial layer and the mold layer to form pillar-type storage node electrodes supported by the support structures.
摘要翻译：形成半导体存储器件的方法包括顺序地形成蚀刻停止层，然后形成模具层，形成多个线状支撑结构，以及填充模具层上的支撑结构之间的间隙的第一牺牲层，依次形成多个线形的第一掩模图案，第二牺牲层，然后在支撑结构上和第一牺牲层上的第二掩模图案，使用第一掩模图案去除第二牺牲层，第一牺牲层和模具层，第二掩模图案和支撑结构作为掩模，去除第一掩模图案和第二掩模图案，用导电材料填充存储节点电极孔并蚀刻导电材料以暴露支撑结构，以及去除第一牺牲层和模具层，以形成由支撑结构支撑的柱状存储节点电极。

2. 发明申请

US20100120212A1 Method of forming capacitor of semiconductor memory device 有权
标题翻译：形成半导体存储器件电容器的方法
公开(公告)号：US20100120212A1
公开(公告)日：2010-05-13
申请号：US12591072
申请日：2009-11-06
申请人： Dong-kwan Yang , Seong-ho Kim , Won-mo Park , Gil-sub Kim
发明人： Dong-kwan Yang , Seong-ho Kim , Won-mo Park , Gil-sub Kim
IPC分类号： H01L21/8239 , H01L21/02
CPC分类号： H01L27/10817 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/10855
摘要： A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold layer, sequentially forming a plurality of line-shaped first mask patterns, a second sacrificial layer, and then second mask patterns on the support structures and on the first sacrificial layer, removing the second sacrificial layer, the first sacrificial layer, and the mold layer using the first mask patterns, the second mask patterns, and the support structures as masks, removing the first mask patterns and second mask patterns, filling the storage node electrode holes with a conductive material and etching back the conductive material to expose the support structures, and removing the first sacrificial layer and the mold layer to form pillar-type storage node electrodes supported by the support structures.
摘要翻译：形成半导体存储器件的方法包括顺序地形成蚀刻停止层，然后形成模具层，形成多个线状支撑结构，以及填充模具层上的支撑结构之间的间隙的第一牺牲层，依次形成多个线形的第一掩模图案，第二牺牲层，然后在支撑结构上和第一牺牲层上的第二掩模图案，使用第一掩模图案去除第二牺牲层，第一牺牲层和模具层，第二掩模图案和支撑结构作为掩模，去除第一掩模图案和第二掩模图案，用导电材料填充存储节点电极孔并蚀刻导电材料以暴露支撑结构，以及去除第一牺牲层和模具层，以形成由支撑结构支撑的柱状存储节点电极。

3. 发明授权

US06429445B1 Electron beam irradiating apparatus having cathode plate formed of non-metal conductive material 有权
标题翻译：具有由非金属导电材料形成的阴极板的电子束照射装置
公开(公告)号：US06429445B1
公开(公告)日：2002-08-06
申请号：US09639833
申请日：2000-08-16
申请人： Seong-ho Kim , Sung-jin Kim , Hae-jeong Lee
发明人： Seong-ho Kim , Sung-jin Kim , Hae-jeong Lee
IPC分类号： G21G500
CPC分类号： H01J37/32 , H01J37/075
摘要： An electron beam irradiating apparatus adopting a cathode plate including a non-metal conductive material. The electron beam irradiating apparatus includes a chamber having an opening at the top thereof, a cathode plate disposed to cover the opening of the chamber, a susceptor disposed on the inner bottom surface of the chamber, a grid plate disposed between the cathode plate and the susceptor, and a gas injection ring disposed below the grid plate. The cathode plate and the chamber are electrically insulated from each other, and the grid plate is electrically insulated from the chamber and the cathode plate. The cathode plate may be a single plate formed of the non-metal conductive material alone or a double cathode plate in which at least a lower surface thereof, facing the bottom surface of the chamber, is formed of a non-metal conductive material. When electrons are emitted from the cathode plate by applying a predetermined voltage to the cathode and grid plates, simultaneous emission of metal atoms from the cathode plate can be eliminated.
摘要翻译：采用包含非金属导电材料的阴极板的电子束照射装置。电子束照射装置包括在其顶部具有开口的室，设置成覆盖室的开口的阴极板，设置在室的内底表面上的基座，设置在阴极板和阴极板之间的栅极板基座和布置在栅板下方的气体注入环。阴极板和室彼此电绝缘，栅板与室和阴极板电绝缘。阴极板可以是由单独的非金属导电材料形成的单板或双面阴极板，其中至少其下表面面对腔室的底表面由非金属导电材料形成。当通过向阴极和栅格板施加预定电压从阴极板发射电子时，可以消除来自阴极板的金属原子的同时发射。

4. 发明申请

US20080186418A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20080186418A1
公开(公告)日：2008-08-07
申请号：US12012249
申请日：2008-01-31
申请人： Seong-ho Kim , Young-jin Chang , Jae-beom Choi , In-do Chung
发明人： Seong-ho Kim , Young-jin Chang , Jae-beom Choi , In-do Chung
IPC分类号： G02F1/1335
CPC分类号： G06F3/045 , G02F1/13338 , G06F3/0412
摘要： A display device includes: a first insulating substrate; a first polarizing plate formed on an external surface of the first insulating substrate; a second insulating substrate coupled to the first insulating substrate; a liquid crystal layer interposed between the first insulating substrate and the second insulating substrate; a first resistive film formed on an external surface of the second insulating substrate; a second polarizing plate positioned on the first resistive film; a supporting film positioned on an internal surface of the second polarizing plate and having isotropic property; a second resistive film formed on the supporting film and facing the first resistive film; and a diffusion layer interposed between the second insulating substrate and the second polarizing plate.
摘要翻译：显示装置包括：第一绝缘基板; 形成在所述第一绝缘基板的外表面上的第一偏振片; 耦合到所述第一绝缘基板的第二绝缘基板; 介于所述第一绝缘基板和所述第二绝缘基板之间的液晶层; 形成在所述第二绝缘基板的外表面上的第一电阻膜; 位于所述第一电阻膜上的第二偏振片; 支撑膜，其位于所述第二偏振片的内表面上并具有各向同性; 形成在所述支撑膜上并面对所述第一电阻膜的第二电阻膜; 以及插入在第二绝缘基板和第二偏振板之间的扩散层。

5. 发明授权

US07154154B2 MOS transistors having inverted T-shaped gate electrodes 失效
标题翻译： MOS晶体管具有倒置的T形栅电极
公开(公告)号：US07154154B2
公开(公告)日：2006-12-26
申请号：US10683782
申请日：2003-10-10
申请人： Shin-Ae Lee , Dong-gun Park , Chang-sub Lee , Jeong-dong Choe , Sung-min Kim , Seong-ho Kim
发明人： Shin-Ae Lee , Dong-gun Park , Chang-sub Lee , Jeong-dong Choe , Sung-min Kim , Seong-ho Kim
IPC分类号： H01L29/76
CPC分类号： H01L29/66583 , H01L21/28114 , H01L21/823842 , H01L21/82385 , H01L21/823864 , H01L29/42376 , H01L29/665 , H01L29/66537 , H01L29/66553
摘要： MOS transistors have an active region defined in a portion of a semiconductor substrate, a gate electrode on the active region, and drain and source regions in the substrate. First and second lateral protrusions extend from the lower portions of respective sidewalls of the gate electrode. The drain region has a first lightly-doped drain region under the first lateral protrusion, a second lightly-doped drain region adjacent the first lightly-doped drain region, and a heavily-doped drain region adjacent to the second lightly-doped drain region. The source region similarly has a first lightly-doped source region under the second lateral protrusion, a second lightly-doped source region adjacent the first lightly-doped source region, and a heavily-doped source region adjacent to the second lightly-doped source region. The second lightly-doped regions are deeper than the first lightly-doped regions, and the gate electrode may have an inverted T-shape.
摘要翻译： MOS晶体管具有限定在半导体衬底的一部分中的有源区，有源区上的栅电极和衬底中的漏极和源极区。第一和第二横向突起从栅电极的相应侧壁的下部延伸。漏极区域在第一横向突起下方具有第一轻掺杂漏极区域，与第一轻掺杂漏极区域相邻的第二轻掺杂漏极区域和与第二轻掺杂漏极区域相邻的重掺杂漏极区域。源极区域类似地在第二横向突起下方具有第一轻掺杂源极区域，与第一轻掺杂源极区域相邻的第二轻掺杂源极区域和与第二轻掺杂源极区域相邻的重掺杂源极区域。第二轻掺杂区域比第一轻掺杂区域深，并且栅电极可以具有倒置T形。

6. 发明申请

US20060050211A1 Semi-transmission LCD device and method of making the same 审中-公开
标题翻译：半透明液晶装置及其制作方法
公开(公告)号：US20060050211A1
公开(公告)日：2006-03-09
申请号：US11208917
申请日：2005-08-22
申请人： Seong-ho Kim , Seung-gon Kang , Chun-gi You
发明人： Seong-ho Kim , Seung-gon Kang , Chun-gi You
IPC分类号： G02F1/1335 , G02F1/136
CPC分类号： G02F1/133555 , G02F1/1368 , G02F2001/136222 , G02F2202/104
摘要： A liquid crystal display device includes a first substrate and a second substrate opposing the first substrate. The first substrate has a reflecting area and a transmitting area. The first substrate includes a first insulating substrate, a polysilicon layer disposed at the first insulating substrate and having a channel area, a gate wiring comprising a gate electrode positioned on the channel area, a source area and a drain area wherein the source area and the drain area are separated each other by the channel area, a data wiring comprising a source electrode and a drain electrode electrically connected with the source area and the drain area, respectively, an organic layer disposed at the data wiring, a reflecting layer disposed at the organic layer and defining the reflecting area, a color filter layer disposed at the reflecting layer, and a pixel electrode layer disposed at the color filter layer and electrically connected with the drain electrode.
摘要翻译：液晶显示装置包括与第一基板相对的第一基板和第二基板。第一基板具有反射区域和透射区域。第一衬底包括第一绝缘衬底，设置在第一绝缘衬底处并具有沟道区的多晶硅层，包括位于沟道区上的栅电极的栅极布线，源区和漏区，其中源区和漏极区域彼此分开通道区域，数据布线包括分别与源区域和漏极区域电连接的源电极和漏极电极，设置在数据布线处的有机层，设置在数据布线处的反射层有机层并限定反射区域，设置在反射层处的滤色器层和设置在滤色器层处并与漏电极电连接的像素电极层。

7. 发明授权

US07554637B2 Liquid crystal display panel and display apparatus having the same 有权
标题翻译：液晶显示面板及其显示装置
公开(公告)号：US07554637B2
公开(公告)日：2009-06-30
申请号：US11211778
申请日：2005-08-25
申请人： Seong-ho Kim , Seung-gon Kang , Chung Yi , Tae-hyeong Park , Gyung-soon Park
发明人： Seong-ho Kim , Seung-gon Kang , Chung Yi , Tae-hyeong Park , Gyung-soon Park
IPC分类号： G02F1/1337 , G02F1/1339
CPC分类号： G02F1/1339 , G02F1/1337
摘要： A displaying apparatus includes a first substrate having a first orientation film, a second substrate having a second orientation film corresponding to the first orientation film, oppositely facing the first substrate, and a sealant having at least a part overlapped with circumferential regions of the orientation films, the sealant adhering the first substrate to the second substrate, wherein, in one exemplary embodiment, the circumferential regions of the orientation films overlapped with the sealant are formed with protrusions along planar directions of the substrates, thus providing a displaying apparatus having an excellent adherence between substrates and preventing a display region from being narrowed.
摘要翻译：显示装置包括具有第一取向膜的第一基板，具有与第一取向膜相对应的第二取向膜的第二基板，与第一基板相对的第一基板以及与取向膜的周向区域重叠的至少一部分的密封材料密封剂将第一基板粘合到第二基板上，其中在一个示例性实施例中，与密封剂重叠的取向膜的周向区域在基板的平面方向上形成有突起，从而提供具有优异粘附性的显示装置并防止显示区域变窄。

8. 发明申请

US20070096217A1 MOS TRANSISTORS HAVING INVERTED T-SHAPED GATE ELECTRODES AND FABRICATION METHODS THEREOF 失效
标题翻译：具有反相T型电极的MOS晶体管及其制造方法
公开(公告)号：US20070096217A1
公开(公告)日：2007-05-03
申请号：US11560556
申请日：2006-11-16
申请人： Shin-Ae Lee , Dong-gun Park , Chang-sub Lee , Jeong-dong Choe , Sung-min Kim , Seong-ho Kim
发明人： Shin-Ae Lee , Dong-gun Park , Chang-sub Lee , Jeong-dong Choe , Sung-min Kim , Seong-ho Kim
IPC分类号： H01L29/94
CPC分类号： H01L29/66583 , H01L21/28114 , H01L21/823842 , H01L21/82385 , H01L21/823864 , H01L29/42376 , H01L29/665 , H01L29/66537 , H01L29/66553
摘要： MOS transistors have an active region defined in a portion of a semiconductor substrate, a gate electrode on the active region, and drain and source regions in the substrate. First and second lateral protrusions extend from the lower portions of respective sidewalls of the gate electrode. The drain region has a first lightly-doped drain region under the first lateral protrusion, a second lightly-doped drain region adjacent the first lightly-doped drain region, and a heavily-doped drain region adjacent to the second lightly-doped drain region. The source region similarly has a first lightly-doped source region under the second lateral protrusion, a second lightly-doped source region adjacent the first lightly-doped source region, and a heavily-doped source region adjacent to the second lightly-doped source region. The second lightly-doped regions are deeper than the first lightly-doped regions, and the gate electrode may have an inverted T-shape.
摘要翻译： MOS晶体管具有限定在半导体衬底的一部分中的有源区，有源区上的栅电极和衬底中的漏极和源极区。第一和第二横向突起从栅电极的相应侧壁的下部延伸。漏极区域在第一横向突起下方具有第一轻掺杂漏极区域，与第一轻掺杂漏极区域相邻的第二轻掺杂漏极区域和与第二轻掺杂漏极区域相邻的重掺杂漏极区域。源极区域类似地在第二横向突起下方具有第一轻掺杂源极区域，与第一轻掺杂源极区域相邻的第二轻掺杂源极区域和与第二轻掺杂源极区域相邻的重掺杂源极区域。第二轻掺杂区域比第一轻掺杂区域深，并且栅电极可以具有倒置T形。

9. 发明授权

US07015549B2 Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate 有权
标题翻译：集成电路结构，包括从有源区域延伸穿过绝缘层到衬底的外延硅层
公开(公告)号：US07015549B2
公开(公告)日：2006-03-21
申请号：US10706755
申请日：2003-11-12
申请人： Sung-min Kim , Dong-gun Park , Chang-sub Lee , Jeong-dong Choe , Shin-ae Lee , Seong-ho Kim
发明人： Sung-min Kim , Dong-gun Park , Chang-sub Lee , Jeong-dong Choe , Shin-ae Lee , Seong-ho Kim
IPC分类号： H01L29/772
CPC分类号： H01L21/76264 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/76283 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78639 , H01L29/78654
摘要： An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the insulation layer to a substrate beneath the insulation layer.
摘要翻译：集成电路结构可以包括隔离结构，其将集成电路基板的有源区域与相邻的有源区域隔离，以及从隔离结构延伸到有源区域下方的绝缘层。外延硅层从有源区延伸穿过绝缘层到绝缘层下方的衬底。

10. 发明授权

US08223278B2 Display device having a touch screen panel 失效
标题翻译：具有触摸屏面板的显示装置
公开(公告)号：US08223278B2
公开(公告)日：2012-07-17
申请号：US11936253
申请日：2007-11-07
申请人： Seong-ho Kim , Dong-jin Jeong
发明人： Seong-ho Kim , Dong-jin Jeong
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G06F3/045 , G02F1/13338 , H05K1/147
摘要： A display device includes a first substrate, a second substrate, pads, a first flexible circuit board, and a second flexible circuit board. The first substrate includes a first insulating substrate, a first resistance layer formed on the first insulating substrate, and first and second signal lines formed on the first insulating substrate. The second substrate faces the first substrate and includes a second insulating substrate, a second resistance layer formed on the second insulating substrate, and third and fourth signal lines formed on the second insulating substrate. The pads comprise a first pad connected to the first signal line, a second pad connected to the second signal line, a third pad connected to the third signal line, and a fourth pad connected to the fourth signal line. The first flexible circuit board is connected to two of the pads and the second flexible circuit board is connected to the other two pads.
摘要翻译：显示装置包括第一基板，第二基板，焊盘，第一柔性电路板和第二柔性电路板。第一基板包括第一绝缘基板，形成在第一绝缘基板上的第一电阻层，以及形成在第一绝缘基板上的第一和第二信号线。第二基板面向第一基板，并且包括第二绝缘基板，形成在第二绝缘基板上的第二电阻层，以及形成在第二绝缘基板上的第三和第四信号线。焊盘包括连接到第一信号线的第一焊盘，连接到第二信号线的第二焊盘，连接到第三信号线的第三焊盘以及连接到第四信号线的第四焊盘。第一柔性电路板连接到两个焊盘，第二柔性电路板连接到另外两个焊盘。

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