专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07139064B2 Optical system for providing a hexapole illumination and method of forming a photoresist pattern on a substrate using the same 有权
标题翻译：用于提供六极照明的光学系统和使用其形成光致抗蚀剂图案的方法
公开(公告)号：US07139064B2
公开(公告)日：2006-11-21
申请号：US10867469
申请日：2004-06-14
申请人： Dong-Seok Nam , Chan Hwang , Young-Seog Kang
发明人： Dong-Seok Nam , Chan Hwang , Young-Seog Kang
IPC分类号： G03B27/54 , G03B27/42 , G03B27/52
CPC分类号： G03F7/70108 , G03B27/42
摘要： In an optical system for forming a photoresist pattern on a substrate, an optical element such as a holographic optical element and an aperture plate provides an off-axis illumination beam having a hexapole. The photoresist pattern is formed to form structures such as contact pads, and includes first holes and second holes repeatedly arranged on the substrate. The hexapole includes four first poles symmetrically disposed with respect to an x-axis and a y-axis, and two second poles disposed in the x-axis so as to be symmetric with respect to the y-axis. The off-axis illumination beam may improve a resolution of the photoresist pattern and a depth of focus (DOF) of a light beam to be projected onto the substrate.
摘要翻译：在用于在基板上形成光致抗蚀剂图案的光学系统中，诸如全息光学元件和孔板的光学元件提供具有六极的离轴照明光束。形成光致抗蚀剂图案以形成诸如接触焊盘的结构，并且包括重复地布置在基板上的第一孔和第二孔。六极包括相对于x轴和y轴对称设置的四个第一极和设置在x轴上以相对于y轴对称的两个第二极。离轴照明光束可以提高光致抗蚀剂图案的分辨率和要投影到基板上的光束的焦深（DOF）。

2. 发明申请

US20050105072A1 Optical system for providing a hexapole illumination and method of forming a photoresist pattern on a substrate using the same 有权
标题翻译：用于提供六极照明的光学系统和使用其形成光致抗蚀剂图案的方法
公开(公告)号：US20050105072A1
公开(公告)日：2005-05-19
申请号：US10867469
申请日：2004-06-14
申请人： Dong-Seok Nam , Chan Hwang , Young-Seog Kang
发明人： Dong-Seok Nam , Chan Hwang , Young-Seog Kang
IPC分类号： G03B27/42 , G03C5/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70108 , G03B27/42
摘要： In an optical system for forming a photoresist pattern on a substrate, an optical element such as a holographic optical element and an aperture plate provides an off-axis illumination beam having a hexapole. The photoresist pattern is formed to form structures such as contact pads, and includes first holes and second holes repeatedly arranged on the substrate. The hexapole includes four first poles symmetrically disposed with respect to an x-axis and a y-axis, and two second poles disposed in the x-axis so as to be symmetric with respect to the y-axis. The off-axis illumination beam may improve a resolution of the photoresist pattern and a depth of focus (DOF) of a light beam to be projected onto the substrate.
摘要翻译：在用于在基板上形成光致抗蚀剂图案的光学系统中，诸如全息光学元件和孔板的光学元件提供具有六极的离轴照明光束。形成光致抗蚀剂图案以形成诸如接触焊盘的结构，并且包括重复地布置在基板上的第一孔和第二孔。六极包括相对于x轴和y轴对称设置的四个第一极和设置在x轴上以相对于y轴对称的两个第二极。离轴照明光束可以提高光致抗蚀剂图案的分辨率和要投影到基板上的光束的焦深（DOF）。

3. 发明申请

US20050003278A1 Photomask for forming photoresist patterns repeating in two dimensions and method of fabricating the same 有权
标题翻译：用于形成二维重复的光刻胶图案的光掩模及其制造方法
公开(公告)号：US20050003278A1
公开(公告)日：2005-01-06
申请号：US10827556
申请日：2004-04-19
申请人： Chan Hwang , In-Sung Kim , Young-Seog Kang
发明人： Chan Hwang , In-Sung Kim , Young-Seog Kang
IPC分类号： H01L21/027 , G03C5/00 , G03F1/00 , G03F1/36 , G03F9/00
CPC分类号： G03F1/36
摘要： A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, the photomask includes at least one through hole penetrating a portion of each of the light-shielding patterns to expose the transparent substrate.
摘要翻译：光掩模包括透明基板和在二维上在透明基板上重复对准的多个遮光图案。每个遮光图案具有彼此不同的长度和宽度测量值。此外，光掩模包括贯穿每个遮光图案的一部分的至少一个通孔，以露出透明基板。

4. 发明授权

US07361433B2 Photomask for forming photoresist patterns repeating in two dimensions and method of fabricating the same 有权
标题翻译：用于形成二维重复的光刻胶图案的光掩模及其制造方法
公开(公告)号：US07361433B2
公开(公告)日：2008-04-22
申请号：US10827556
申请日：2004-04-19
申请人： Chan Hwang , In-Sung Kim , Young-Seog Kang
发明人： Chan Hwang , In-Sung Kim , Young-Seog Kang
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A photomask includes a transparent substrate, and a plurality of light-shielding patterns repeatedly aligned on the transparent substrate in two dimensions. Each of the light-shielding patterns has length and width measurements that differ from each other. Further, the photomask includes at least one through hole penetrating a portion of each of the light-shielding patterns to expose the transparent substrate.
摘要翻译：光掩模包括透明基板和在二维上在透明基板上重复对准的多个遮光图案。每个遮光图案具有彼此不同的长度和宽度测量值。此外，光掩模包括贯穿每个遮光图案的一部分的至少一个通孔，以露出透明基板。

5. 发明授权

US08229205B2 Pattern matching method in manufacturing semiconductor memory devices 有权
标题翻译：制造半导体存储器件的图案匹配方法
公开(公告)号：US08229205B2
公开(公告)日：2012-07-24
申请号：US12253618
申请日：2008-10-17
申请人： Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee , Hyun-Jong Lee
发明人： Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee , Hyun-Jong Lee
IPC分类号： G06K9/00 , G06K9/36 , G06K9/32
CPC分类号： G03F1/84
摘要： A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional Fourier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.
摘要翻译：用于制造半导体存储器件的图案匹配方法增加了GDS图像和SEM图像之间的图案匹配率。模式匹配方法包括提取扫描电子显微镜（SEM）图像和图形数据系统（GDS）图像以执行模式匹配; 对所提取的GDS图像执行二维傅里叶变换（FFT）并分析低空间频率; 通过使用所分析的低空间频率来确定图案是否是重复图案或非重复图案; 并且当判定结果用于重复图案时，限制用于模式匹配的X / Y范围，然后执行SEM图像和GDS图像之间的图案匹配。

6. 发明授权

US07475383B2 Method of fabricating photo mask 有权
标题翻译：制作光罩的方法
公开(公告)号：US07475383B2
公开(公告)日：2009-01-06
申请号：US11589055
申请日：2006-10-30
申请人： Sung-Soo Suh , Young-Seog Kang , In-Sung Kim
发明人： Sung-Soo Suh , Young-Seog Kang , In-Sung Kim
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00 , G21K5/00
CPC分类号： G03F1/36
摘要： Provided is a method of fabricating a photo mask. The method includes preparing a model group including optical proximity correction (OPC) models and generating a preliminary mask layout using an integrated circuit (IC) layout. A contour image may be produced from the preliminary mask layout through a simulation using an optical model. Subsequently, the preliminary mask layout may be compared with the contour image and the comparison result may be analyzed to produce analysis data for providing criteria used in selecting an OPC model. An OPC model suitable for the preliminary mask layout may be selected from the model group based on the analysis data. An OPC process may be performed on the preliminary mask layout using the selected OPC model to generate a mask layout.
摘要翻译：提供一种制造光掩模的方法。该方法包括准备包括光学邻近校正（OPC）模型的模型组，并使用集成电路（IC）布局产生初步掩模布局。可以通过使用光学模型的模拟从初步掩模布局产生轮廓图像。随后，可以将初步掩模布局与轮廓图像进行比较，并且可以分析比较结果以产生用于提供在选择OPC模型中使用的标准的分析数据。可以基于分析数据从模型组中选择适合初步掩模布局的OPC模型。可以使用选择的OPC模型在初步掩模布局上执行OPC处理以生成掩模布局。

7. 发明申请

US20080187211A1 Global matching methods used to fabricate semiconductor devices 审中-公开
标题翻译：用于制造半导体器件的全局匹配方法
公开(公告)号：US20080187211A1
公开(公告)日：2008-08-07
申请号：US11880495
申请日：2007-07-23
申请人： Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee
发明人： Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06K9/64 , G06T7/13 , G06T2207/10056 , G06T2207/30148
摘要： A global matching method for semiconductor memory device fabrication may include extracting a graphic data system (GDS) image and a scanning electron microscope (SEM) image of patterns in a region on a wafer. First directional edges extending in a first direction and second directional edges extending in a second direction may be separately extracted from each of the GDS image and the SEM image with the first and second directions being different. The GDS image and the SEM image may be matched with respect to either the first directional edges or the second directional edges which are relatively shorter. After the relatively shorter edges of the GDS image and the SEM image are matched, the GDS image and the SEM image may be matched with respect to relatively longer edges, based on a result of the matching with respect to the relatively shorter edges, thereby completing pattern matching of the GDS image and the SEM image.
摘要翻译：用于半导体存储器件制造的全局匹配方法可以包括提取晶片上的区域中的图案的图形数据系统（GDS）图像和扫描电子显微镜（SEM）图像。可以从第一和第二方向不同的每个GDS图像和SEM图像分别提取沿第一方向延伸的第一方向边缘和沿第二方向延伸的第二方向边缘。 GDS图像和SEM图像可以相对于相对较短的第一方向边缘或第二方向边缘匹配。在GDS图像和SEM图像的相对较短边缘匹配之后，基于相对于较短边缘的匹配结果，GDS图像和SEM图像可以相对于相对较长的边缘匹配，由此完成 GDS图像和SEM图像的图案匹配。

8. 发明授权

US06911286B2 Method of designing phase grating pattern providing modified illumination optimum for producing a target pattern and method of manufacturing a photo mask system comprising the phase grating pattern 失效
标题翻译：提供相位光栅图案的方法，提供用于产生目标图案的最佳修改照明以及制造包括相位光栅图案的光掩模系统的方法
公开(公告)号：US06911286B2
公开(公告)日：2005-06-28
申请号：US10409163
申请日：2003-04-09
申请人： Young-Seog Kang , Jong-Rak Park
发明人： Young-Seog Kang , Jong-Rak Park
IPC分类号： G02B5/18 , G01F9/00 , G02B6/124 , G03B27/42 , G03F1/68 , G03F1/76 , G03F7/20 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F7/70433 , G03F1/50 , G03F7/70091 , G03F7/70125 , G03F7/7015 , G03F7/70158
摘要： A method of designing a phase grating pattern provides a modified form of illumination for a main mask, optimum for producing one or more target patterns on a wafer in a photolithographic process. Once the target pattern(s) to be formed on the wafer are decided, an area to be occupied by at least a portion of the phase grating is divided into a plurality of subcells, initial phase values are assigned to each of the subcells, and one of the subcells is randomly selected and the phase value last assigned thereto is changed, and the process is repeated. The process is in an iteration that changes the arrangement of the phase values assigned to the subcells until they converge on one which will provide the design for a phase grating which will produce a modified form of illumination optimum for use in forming the target pattern(s) on the wafer.
摘要翻译：设计相位光栅图案的方法提供了用于主掩模的修改形式的照明，其最适于在光刻工艺中在晶片上产生一个或多个目标图案。一旦确定要在晶片上形成的目标图案，则由相位光栅的至少一部分占据的区域被划分为多个子单元，初始相位值被分配给每个子单元，并且随机选择一个子单元，并且最后分配给它的相位值被改变，并重复该过程。该过程处于迭代中，其改变分配给子单元的相位值的排列，直到它们会聚到将为相位光栅提供设计的相位光栅，其将产生最佳的修改形式的照明，以用于形成目标图案）在晶圆上。

9. 发明授权

US07900170B2 System and method correcting optical proximity effect using pattern configuration dependent OPC models 有权
标题翻译：使用模式配置依赖OPC模型的系统和方法校正光学邻近效应
公开(公告)号：US07900170B2
公开(公告)日：2011-03-01
申请号：US11585086
申请日：2006-10-24
申请人： Sung-Soo Suh , Young-Seog Kang , Han-Ku Cho , Sang-Gyun Woo
发明人： Sung-Soo Suh , Young-Seog Kang , Han-Ku Cho , Sang-Gyun Woo
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An optical proximity correction (OPC) system and methods thereof are provided. The example OPC system may include an integrated circuit (IC) layout generation unit generating an IC layout, a database unit storing a first plurality of OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics and a mask layout generation unit including a model selector selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the plurality of OPC models and the generated IC layout, the mask layout generation unit generating a mask layout based on the IC layout and the selected second plurality of OPC models. A first example method may include storing a first plurality OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics, generating an IC layout, selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the first plurality of OPC models and the generated IC layout and generating a mask layout based on the generated IC layout and the selected second plurality of OPC models. A second example method may include applying a first OPC model to a first portion of a generated integrated circuit (IC) layout, applying a second OPC model to a second portion of the generated IC layout and generating a mask layout based on the generated IC layout after the application of the first and second OPC models.
摘要翻译：提供光学邻近校正（OPC）系统及其方法。示例性OPC系统可以包括产生IC布局的集成电路（IC）布局生成单元，存储第一多个OPC模型的数据库单元，与多个目标特定特征之一相关联的第一多个OPC模型中的每一个，以及掩模布局生成单元，其包括基于与所述多个OPC模型相关联的目标特定特性与所生成的IC布局之间的比较来选择第二多个OPC模型的模型选择器，所述掩模布局生成单元基于所述多个OPC模型生成掩模布局 IC布局和所选择的第二批OPC模型。第一示例性方法可以包括存储第一多个OPC模型，所述第一多个OPC模型中的每一个与多个目标特定特征中的一个相关联，生成IC布局，基于所述多个OPC模型之间的比较来选择第二多个OPC模型与第一多个OPC模型相关联的目标特定特征和所生成的IC布局，并且基于所生成的IC布局和所选择的第二多个OPC模型生成掩模布局。第二示例性方法可以包括将第一OPC模型应用于所生成的集成电路（IC）布局的第一部分，将第二OPC模型应用于所生成的IC布局的第二部分，并且基于所生成的IC布局生成掩模布局之后应用了第一个和第二个OPC模型。

10. 发明申请

US20090103799A1 PATTERN MATCHING METHOD IN MANUFACTURING SEMICONDUCTOR MEMORY DEVICES 有权
标题翻译：制造半导体存储器件中的图案匹配方法
公开(公告)号：US20090103799A1
公开(公告)日：2009-04-23
申请号：US12253618
申请日：2008-10-17
申请人： Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee , Hyun-Jong Lee
发明人： Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee , Hyun-Jong Lee
IPC分类号： G06K9/00 , G06K9/62
CPC分类号： G03F1/84
摘要： A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional furrier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.
摘要翻译：用于制造半导体存储器件的图案匹配方法增加了GDS图像和SEM图像之间的图案匹配率。模式匹配方法包括提取扫描电子显微镜（SEM）图像和图形数据系统（GDS）图像以执行模式匹配; 对所提取的GDS图像执行二维傅立叶变换（FFT），并分析低空间频率; 通过使用所分析的低空间频率来确定图案是否是重复图案或非重复图案; 并且当判定结果用于重复图案时，限制用于模式匹配的X / Y范围，然后执行SEM图像和GDS图像之间的图案匹配。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式