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    • 3. 发明授权
    • Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same
    • 具有虚拟读出放大器的半导体存储器件及其利用方法
    • US08102689B2
    • 2012-01-24
    • US12687971
    • 2010-01-15
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • G11C5/02
    • G11C11/4091G11C11/4097
    • A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
    • 提供了具有虚拟读出放大器的半导体存储器件及其利用方法。 半导体存储器件的实施例可以包括至少一个虚设单元块,其包括虚设单元和存储单元。 在第一方向连接虚拟单元块中的存储单元的正常位线和在第一方向上连接虚设单元的虚拟位线。 还包括虚拟读出放大器,用于连接任何两个正常位线和虚拟位线。 一些实施例可以改善感测虚拟单元中的存储器单元的感测容限和刷新余量,以及提高冗余效率和虚拟单元的利用。
    • 7. 发明授权
    • Semiconductor memory device having dummy sense amplifiers and methods of utilizing the same
    • 具有虚拟读出放大器的半导体存储器件及其利用方法
    • US07649760B2
    • 2010-01-19
    • US11465304
    • 2006-08-17
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • Min-Ki HongSang-Seok KangDong-Min Kim
    • G11C5/02
    • G11C11/4091G11C11/4097
    • A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
    • 提供了具有虚拟读出放大器的半导体存储器件及其利用方法。 半导体存储器件的实施例可以包括至少一个虚设单元块,其包括虚设单元和存储单元。 在第一方向连接虚拟单元块中的存储单元的正常位线和在第一方向上连接虚设单元的虚拟位线。 还包括虚拟读出放大器,用于连接任何两个正常位线和虚拟位线。 一些实施例可以改善感测虚拟单元中的存储器单元的感测容限和刷新余量,以及提高冗余效率和虚拟单元的利用。