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1. 发明授权

US09141905B2 Card-type information recording medium having embedded antenna for near field communication and manufacturing method thereof 有权
标题翻译：具有用于近场通信的嵌入式天线的卡式信息记录介质及其制造方法
公开(公告)号：US09141905B2
公开(公告)日：2015-09-22
申请号：US13423363
申请日：2012-03-19
申请人： Dong-Hyun Baek , Byoung-Ok Lee , Jung-Hyun Cho , Eun-Su Kim
发明人： Dong-Hyun Baek , Byoung-Ok Lee , Jung-Hyun Cho , Eun-Su Kim
IPC分类号： G06K19/06 , G06K19/077
CPC分类号： G06K19/07783 , G06K19/07722 , G06K19/07769 , G06K19/07771 , Y10T29/49016
摘要： A card-type information recording medium having an embedded antenna for NFC communication is provided. The card-type information recording medium includes: a PCB that has a loop antenna pattern and a routing pattern formed on the top surface and the bottom surface thereof through the use of an etching process; an NFC communication unit and a USIM card unit that are horizontally mounted on the top of the PCB; and a molding material that is formed on the top of the PCB to cover the NFC communication unit and the USIM card unit. Accordingly, it is possible to perform functions of NFC and RFID read/tag by only mounting a USIM device thereon without adding any module or any constituent having an antenna function to a mobile terminal.
摘要翻译：提供一种具有用于NFC通信的嵌入式天线的卡型信息记录介质。卡式信息记录介质包括：通过使用蚀刻工艺在其顶表面和底表面上形成环形天线图案和布线图案的PCB; 水平安装在PCB顶部的NFC通信单元和USIM卡单元; 以及形成在PCB的顶部以覆盖NFC通信单元和USIM卡单元的成型材料。因此，通过仅在其上安装USIM设备就可以执行NFC和RFID读取/标签的功能，而不需要向移动终端添加具有天线功能的任何模块或任何组件。

2. 发明申请

US20120255763A1 CARD-TYPE INFORMATION RECORDING MEDIUM HAVING EMBEDDED ANTENNA FOR NEAR FIELD COMMUNICATION AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有嵌入式天线的卡型信息记录介质，用于近场通信及其制造方法
公开(公告)号：US20120255763A1
公开(公告)日：2012-10-11
申请号：US13423363
申请日：2012-03-19
申请人： Dong-Hyun Baek , Byoung-Ok Lee , Jung-Hyun Cho , Eun-Su Kim
发明人： Dong-Hyun Baek , Byoung-Ok Lee , Jung-Hyun Cho , Eun-Su Kim
IPC分类号： H05K1/00 , H01P11/00
CPC分类号： G06K19/07783 , G06K19/07722 , G06K19/07769 , G06K19/07771 , Y10T29/49016
摘要： A card-type information recording medium having an embedded antenna for NFC communication is provided. The card-type information recording medium includes: a PCB that has a loop antenna pattern and a routing pattern formed on the top surface and the bottom surface thereof through the use of an etching process; an NFC communication unit and a USIM card unit that are horizontally mounted on the top of the PCB; and a molding material that is formed on the top of the PCB to cover the NFC communication unit and the USIM card unit. Accordingly, it is possible to perform functions of NFC and RFID read/tag by only mounting a USIM device thereon without adding any module or any constituent having an antenna function to a mobile terminal.
摘要翻译：提供一种具有用于NFC通信的嵌入式天线的卡型信息记录介质。卡式信息记录介质包括：通过使用蚀刻工艺在其顶表面和底表面上形成环形天线图案和布线图案的PCB; 水平安装在PCB顶部的NFC通信单元和USIM卡单元; 以及形成在PCB的顶部以覆盖NFC通信单元和USIM卡单元的成型材料。因此，通过仅在其上安装USIM设备就可以执行NFC和RFID读取/标签的功能，而不需要向移动终端添加具有天线功能的任何模块或任何组件。

3. 发明申请

US20060284682A1 High efficiency power amplifier 审中-公开
标题翻译：高效率功率放大器
公开(公告)号：US20060284682A1
公开(公告)日：2006-12-21
申请号：US11453396
申请日：2006-06-15
申请人： Jae-Sup Lee , Tae-Wook Kim , Hyun-Il Kang , Dong-Hyun Baek
发明人： Jae-Sup Lee , Tae-Wook Kim , Hyun-Il Kang , Dong-Hyun Baek
IPC分类号： H03F1/38
CPC分类号： H03F1/34 , H03F1/301 , H03F1/3205 , H03F3/2171
摘要： A high efficiency power amplifier with a precise duty cycle is provided for use in a driver or pre-power amplifier of a Radio Frequency (RF) system. The high efficiency power amplifier with an inverter configured by one pair of Metal Oxide Semiconductor (MOS) transistors includes a feedback path for adjusting an input voltage in response to an output voltage between input and output terminals of the inverter and correcting an operation time point of the MOS transistors configuring the inverter. The high efficiency power amplifier can be used for a high efficiency driver to automatically correct duty cycle distortion. When the high efficiency power amplifier is placed in a front stage of various RF power amplifiers, it can be used for a pre-amplifier capable of increasing the efficiency of the RF power amplifier.
摘要翻译：提供具有精确占空比的高效率功率放大器用于射频（RF）系统的驱动器或前置功率放大器。具有由一对金属氧化物半导体（MOS）晶体管配置的反相器的高效率功率放大器包括用于响应于逆变器的输入和输出端之间的输出电压来调节输入电压的反馈路径，并且校正操作时间点构成逆变器的MOS晶体管。高效率功率放大器可用于高效率驱动器，以自动校正占空比失真。当高效率功率放大器放置在各种RF功率放大器的前级时，它可以用于能够提高RF功率放大器效率的前置放大器。

4. 发明授权

US07372336B2 Small-sized on-chip CMOS power amplifier having improved efficiency 有权
标题翻译：具有提高效率的小尺寸片上CMOS功率放大器
公开(公告)号：US07372336B2
公开(公告)日：2008-05-13
申请号：US11323744
申请日：2005-12-30
申请人： Jae-Sup Lee , Hyun-Il Kang , Seong-Soo Lee , Holger Lothar , Ju-Hyun Ko , Dong-Hyun Baek , Song-Cheol Hong
发明人： Jae-Sup Lee , Hyun-Il Kang , Seong-Soo Lee , Holger Lothar , Ju-Hyun Ko , Dong-Hyun Baek , Song-Cheol Hong
IPC分类号： H03F3/14
CPC分类号： H03F3/604 , H03F1/02 , H03F1/22 , H03F3/195 , H03F3/265 , H03F2200/537 , H03F2200/541
摘要： A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.
摘要翻译：本文提供了具有提高的效率的小尺寸片上互补金属氧化物半导体（CMOS）功率放大器。片上CMOS功率放大器能够通过增强K因子来提高效率并使其输出最大化，这可能导致具有分布式有源变压器结构的功率放大器的问题。片上CMOS功率放大器具有改进的效率并以小尺寸制造，片上CMOS功率放大器包括位于第一层的初级绕组，位于第二层的次级绕组，其位于第二层的上部第一层，次级绕组对应于初级绕组的位置，以及用于将第二绕组彼此联接的横截面。

5. 发明申请

US20060170503A1 Small-sized on-chip CMOS power amplifier having improved efficiency 有权
标题翻译：具有提高效率的小尺寸片上CMOS功率放大器
公开(公告)号：US20060170503A1
公开(公告)日：2006-08-03
申请号：US11323744
申请日：2005-12-30
申请人： Jae-Sup Lee , Hyun-Il Kang , Seong-Soo Lee , Holger Lothar , Ju-Hyun Ko , Dong-Hyun Baek , Song-Cheol Hong
发明人： Jae-Sup Lee , Hyun-Il Kang , Seong-Soo Lee , Holger Lothar , Ju-Hyun Ko , Dong-Hyun Baek , Song-Cheol Hong
IPC分类号： H03F3/14
CPC分类号： H03F3/604 , H03F1/02 , H03F1/22 , H03F3/195 , H03F3/265 , H03F2200/537 , H03F2200/541
摘要： A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.
摘要翻译：本文提供了具有提高的效率的小尺寸片上互补金属氧化物半导体（CMOS）功率放大器。片上CMOS功率放大器能够通过增强K因子来提高效率并使其输出最大化，这可能导致具有分布式有源变压器结构的功率放大器的问题。片上CMOS功率放大器具有改进的效率并以小尺寸制造，片上CMOS功率放大器包括位于第一层的初级绕组，位于第二层的次级绕组，其位于第二层的上部第一层，次级绕组对应于初级绕组的位置，以及用于将第二绕组彼此联接的横截面。

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