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    • 4. 发明申请
    • PACKAGE MODULE STRUCTURE FOR HIGH POWER DEVICE WITH METAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    • 具有金属基底的高功率器件的封装模块结构及其制造方法
    • US20130020726A1
    • 2013-01-24
    • US13520284
    • 2010-02-16
    • Kyoung-Min KimJung-Hyun Kim
    • Kyoung-Min KimJung-Hyun Kim
    • H01L29/02H01L21/56
    • H01L23/367H01L23/4006H01L23/562H01L2224/32245
    • A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.
    • 一种使用能够通过使由于金属基板与半导体器件之间的热膨胀系数差导致的应力最小化而提高可靠性的金属基板的高功率器件的封装模块结构的制造方法,其特征在于,包括:准备金属基板; 通过选择性地阳极氧化金属基底来形成氧化物层; 通过蚀刻所述氧化物层的一部分形成用于安装半导体器件的安装槽; 安装由具有与半导体器件的材料类似的范围内的热膨胀系数的材料制成的吸震衬底,以露出安装槽的整个或一部分底部; 将半导体器件安装在暴露于安装槽的减震基板中; 并且电连接半导体器件的电极端子和形成在氧化物层的上表面中的电极线。