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    • 2. 发明授权
    • Case of a mobile terminal comprising a main body and a cover
    • 包括主体和盖的移动终端的情况
    • US08244320B2
    • 2012-08-14
    • US12482936
    • 2009-06-11
    • Dong Ho LeeWon Seok Choi
    • Dong Ho LeeWon Seok Choi
    • H04M1/00B29B7/00B29C45/00
    • H04M1/0283
    • A mobile terminal fabricated through co-injection molding is provided. The mobile terminal includes a first case and a second case coupled to the first case. The first case includes a main body having a keypad and a cover formed on the main body. The cover is co-injection molded with the main body whereby no parting lines are formed between the cover and the main body. A method of forming a case of a mobile terminal is also provided. The method includes injection molding a main body using a first resin material, the main body having a keypad, and injection molding a cover onto the main body using a second resin material different from the first resin material, whereby no parting lines are formed between the cover and the main body.
    • 提供了通过共注射成型制造的移动终端。 移动终端包括第一壳体和联接到第一壳体的第二壳体。 第一种情况包括具有小键盘的主体和形成在主体上的盖。 盖与主体共注射成型,由此在盖和主体之间不形成分型线。 还提供了形成移动终端的情况的方法。 该方法包括使用第一树脂材料注射成型主体,主体具有键盘,并且使用与第一树脂材料不同的第二树脂材料将盖注射到主体上,由此在第一树脂材料之间不形成分型线 盖和主体。
    • 5. 发明授权
    • Method of forming junction of semiconductor device
    • 形成半导体器件结的方法
    • US07981752B2
    • 2011-07-19
    • US12258269
    • 2008-10-24
    • Dong Ho Lee
    • Dong Ho Lee
    • H01L21/336
    • H01L21/26513H01L21/2658H01L21/324H01L21/76832H01L27/10873
    • The present invention relates to a method of forming junctions of a semiconductor device. According to the method of forming junctions of a semiconductor device in accordance with an aspect of the present invention, there is provided a semiconductor substrate in which a transistor including the junctions are formed. A first thermal treatment process for forming a passivation layer over the semiconductor substrate including the junctions is performed. Here, the passivation layer functions to prevent impurities within the junctions from being drained. A pre-metal dielectric layer is formed over the semiconductor substrate including the passivation layer.
    • 本发明涉及一种形成半导体器件的结的方法。 根据根据本发明的一个方面的形成半导体器件的结的方法,提供了一种半导体衬底,其中形成包括结的晶体管。 执行用于在包括结的半导体衬底上形成钝化层的第一热处理工艺。 这里,钝化层用于防止接合处的杂质被排出。 在包括钝化层的半导体衬底之上形成预金属介电层。
    • 7. 发明申请
    • SYSTEMS AND METHODS FOR A SPDT SWITCH OR SPMT SWITCH WITH TRANSFORMER
    • 具有变压器的SPDT开关或SPMT开关的系统和方法
    • US20110068636A1
    • 2011-03-24
    • US12565137
    • 2009-09-23
    • Dong Ho LeeMinsik AhnKyu Hwan AnWangmyong WooChang-Ho LeeJoy Laskar
    • Dong Ho LeeMinsik AhnKyu Hwan AnWangmyong WooChang-Ho LeeJoy Laskar
    • H03K17/00
    • H03K17/693Y10T307/76
    • A SPDT or SPMT switch may include a transformer having a primary winding and a secondary winding, where a first end of the secondary winding is connected to a single pole port, where a first end of the primary winding is connected to a first throw port; a first switch having a first end and a second end, where the first end is connected to ground; and a second switch, where a second end of the secondary winding is connected to both a second end of the first switch and a first end of the second switch, where a second end of the second switch is connected to a second throw port, where the first switch controls a first communication path between the single pole port and the first throw port, and where the second switch controls a second communication path between the second throw port and the single pole port.
    • SPDT或SPMT开关可以包括具有初级绕组和次级绕组的变压器,其中次级绕组的第一端连接到单极端口,其中初级绕组的第一端连接到第一端口; 第一开关,其具有第一端和第二端,其中第一端连接到地; 以及第二开关,其中所述次级绕组的第二端连接到所述第一开关的第二端和所述第二开关的第一端,其中所述第二开关的第二端连接到第二突出端口,其中 第一开关控制单极端口和第一端口之间的第一通信路径,并且其中第二开关控制第二端口和单极端口之间的第二通信路径。
    • 9. 发明申请
    • INTEGRATED POWER AMPLIFIERS FOR USE IN WIRELESS COMMUNICATION DEVICES
    • 集成功率放大器用于无线通信设备
    • US20100148877A1
    • 2010-06-17
    • US12623164
    • 2009-11-20
    • Michael Alan OakleyDong Ho LeeKyu Hwan AnChang-Ho LeeJoy Laskar
    • Michael Alan OakleyDong Ho LeeKyu Hwan AnChang-Ho LeeJoy Laskar
    • H03F3/68H03F3/16
    • H03F3/45188H03F1/0288H03F3/211H03F3/604
    • An integrated power amplifier can include a carrier amplifier, where the carrier amplifier is connected to a first quarter wave transformer at the input of the carrier amplifier. In addition, the power amplifier can further include at least one peaking amplifier connected in parallel with the carrier amplifier; a first differential combining structure, where the first combining structure includes a first plurality of quarter wave transformers that are configured to combine respective first differential outputs of the carrier amplifier in phase to generate a first single-ended output signal, and a second differential combining structure, where the second combining structures includes a second plurality of quarter wave transformers that are configured to combine respective second differential outputs of the at least one peaking amplifier in phase to generate a second single-ended output signal, where the first single-ended output signal and the second single-ended output signal are combinable in-phase to provide an overall output.
    • 集成功率放大器可以包括载波放大器,其中载波放大器在载波放大器的输入处连接到第一四分之一波长的变压器。 此外,功率放大器还可以包括与载波放大器并联连接的至少一个峰值放大器; 第一差分组合结构,其中所述第一组合结构包括第一多个四分之一波长变换器,其被配置为相位地组合所述载波放大器的相应的第一差分输出以产生第一单端输出信号,以及第二差分组合结构 ,其中所述第二组合结构包括第二多个四分之一波长变换器,其被配置为组合所述至少一个峰值放大器的相应的第二差分输出以产生第二单端输出信号,其中所述第一单端输出信号 并且第二单端输出信号可同步地组合以提供总体输出。