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1. 发明申请

US20070120104A1 PHASE CHANGE MATERIAL AND NON-VOLATILE MEMORY DEVICE USING THE SAME 有权
标题翻译：相变材料和非易失性存储器件使用相同
公开(公告)号：US20070120104A1
公开(公告)日：2007-05-31
申请号：US11290713
申请日：2005-11-29
申请人： Dong Ho Ahn , Tae-Yon Lee , Ki Bum Kim , Byung-ki Cheong , Dae-Hwan Kang , Jeung-hyun Jeong , In Ho Kim , Taek Sung Lee , Won Mok Kim
发明人： Dong Ho Ahn , Tae-Yon Lee , Ki Bum Kim , Byung-ki Cheong , Dae-Hwan Kang , Jeung-hyun Jeong , In Ho Kim , Taek Sung Lee , Won Mok Kim
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： The present invention provides a phase change memory cell comprising (GeASbBTeC)1−x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要翻译：本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>（（（（（（（（（（（ R a固体溶液，固溶体由Ge-Sb-Te基合金和三元金属形成合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。

2. 发明授权

US07233054B1 Phase change material and non-volatile memory device using the same 有权
标题翻译：相变材料和非易失性存储器件使用相同
公开(公告)号：US07233054B1
公开(公告)日：2007-06-19
申请号：US11290713
申请日：2005-11-29
申请人： Dong Ho Anh , Tae-Yon Lee , Ki Bum Kim , Byung-ki Cheong , Dae-Hwan Kang , Jeung-hyun Jeong , In Ho Kim , Taek Sung Lee , Won Mok Kim
发明人： Dong Ho Anh , Tae-Yon Lee , Ki Bum Kim , Byung-ki Cheong , Dae-Hwan Kang , Jeung-hyun Jeong , In Ho Kim , Taek Sung Lee , Won Mok Kim
IPC分类号： H01L29/12
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
摘要翻译：本发明提供了一种相变存储器单元，其包括（>> Sb> Te>>>>>>（（（（（（（（固体溶液由Ge-Sb-Si固溶体形成， Te基合金和三元金属合金RS-Te与Ge-Sb-Te基合金具有相同的晶体结构。根据本发明的非易失性相变存储单元提供了许多优点，例如高速度，高数据保持和多位操作。

3. 发明授权

US07851828B2 Phase change memory cell with transparent conducting oxide for electrode contact material 有权
标题翻译：具有透明导电氧化物的相变存储单元，用于电极接触材料
公开(公告)号：US07851828B2
公开(公告)日：2010-12-14
申请号：US11290712
申请日：2005-11-29
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Bum Kim
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Bum Kim
IPC分类号： H01L29/768
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144
摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要翻译：本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性，导热性低，热稳定性好。可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

4. 发明授权

US07632456B2 Phase change material for high density non-volatile memory 有权
标题翻译：高密度非易失性存储器的相变材料
公开(公告)号：US07632456B2
公开(公告)日：2009-12-15
申请号：US11411558
申请日：2006-04-25
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
IPC分类号： C22C12/00 , B41M5/26 , G11B7/24
CPC分类号： H01L45/1233 , C01B19/002 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1625 , Y10T428/21
摘要： The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要翻译：本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级数范围内，从而具有600℃或更低的熔融温度。可以利用根据本发明的相变非易失性存储材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

5. 发明申请

US20070001160A1 Phase change material for high density non-volatile memory 有权
标题翻译：高密度非易失性存储器的相变材料
公开(公告)号：US20070001160A1
公开(公告)日：2007-01-04
申请号：US11411558
申请日：2006-04-25
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dae-Hwan Kang , Han Ju Jung , Taek Sung Lee , In Ho Kim , Won Mok Kim , Kyeong Seok Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , C01B19/002 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1625 , Y10T428/21
摘要： The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.
摘要翻译：本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级数范围内，从而具有600℃或更低的熔融温度。可以利用根据本发明的相变非易失性存储器材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

6. 发明申请

US20060113573A1 Phase change memory cell with transparent conducting oxide for electrode contact layer 有权
标题翻译：具有用于电极接触层的透明导电氧化物的相变存储单元
公开(公告)号：US20060113573A1
公开(公告)日：2006-06-01
申请号：US11290712
申请日：2005-11-29
申请人： Byung-ki Cheong , Jeung-hyun Jeong , Dao-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Burn Kim
发明人： Byung-ki Cheong , Jeung-hyun Jeong , Dao-Hwan Kang , Taek Sung Lee , In Ho Kim , Kyeong Seok Lee , Won Mok Kim , Dong-Ho Ahn , Ki-Burn Kim
IPC分类号： H01L29/768
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144
摘要： The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.
摘要翻译：本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性，导热性低，热稳定性好。可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

7. 发明申请

US20130120752A1 FIBER-OPTIC SURFACE PLASMON RESONANCE SENSOR AND SENSING METHOD USING THE SAME 有权
标题翻译：光纤表面等离子体共振传感器和使用该传感器的感光方法
公开(公告)号：US20130120752A1
公开(公告)日：2013-05-16
申请号：US13357837
申请日：2012-01-25
申请人： Kyeong Seok LEE , Won Mok Kim , Taek Sung Lee , In Ho Kim
发明人： Kyeong Seok LEE , Won Mok Kim , Taek Sung Lee , In Ho Kim
IPC分类号： G01N21/55
CPC分类号： G02B6/02 , G01N21/553 , G02B5/008 , G02B6/1226
摘要： A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.
摘要翻译：光纤表面等离子体共振传感器可以包括光纤和表面等离子体激元层。光纤可以包括芯，围绕芯的包层和凹陷。表面等离子激元激发层可以包括在第一激发层和第二激发层之间的第一激发层，第二激发层和光波导层。通过芯入射的入射光可以以满足表面等离子体共振条件的特定入射角和波长耦合到表面等离子体激发层。根据入射光的偏振方向，可以在构成表面等离子体激发层的光波导层中将s偏振分量耦合到导波模式。

8. 发明授权

US09285534B2 Fiber-optic surface plasmon resonance sensor and sensing method using the same 有权
标题翻译：光纤表面等离子体共振传感器和感测方法使用相同
公开(公告)号：US09285534B2
公开(公告)日：2016-03-15
申请号：US13357837
申请日：2012-01-25
申请人： Kyeong Seok Lee , Won Mok Kim , Taek Sung Lee , In Ho Kim
发明人： Kyeong Seok Lee , Won Mok Kim , Taek Sung Lee , In Ho Kim
IPC分类号： G02B6/00 , G02F1/035 , G02B6/02 , G02B5/00 , G01N21/552 , G02B6/122
CPC分类号： G02B6/02 , G01N21/553 , G02B5/008 , G02B6/1226
摘要： A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.
摘要翻译：光纤表面等离子体共振传感器可以包括光纤和表面等离子体激元层。光纤可以包括芯，围绕芯的包层和凹陷。表面等离子激元激发层可以包括在第一激发层和第二激发层之间的第一激发层，第二激发层和光波导层。通过芯入射的入射光可以以满足表面等离子体共振条件的特定入射角和波长耦合到表面等离子体激发层。根据入射光的偏振方向，可以在构成表面等离子体激发层的光波导层中将s偏振分量耦合到导波模式。

9. 发明授权

US08758985B2 Method of fabricating nanostructure array and device including nanostructure array 有权
标题翻译：制造纳米结构阵列的方法和包括纳米结构阵列的器件
公开(公告)号：US08758985B2
公开(公告)日：2014-06-24
申请号：US13198892
申请日：2011-08-05
申请人： Kyeong Seok Lee , Won Mok Kim , In Ho Kim
发明人： Kyeong Seok Lee , Won Mok Kim , In Ho Kim
IPC分类号： G03F7/26
CPC分类号： G03F7/2016 , G03F7/201
摘要： Provided are a method of fabricating a nanostructure array and a device including the nanostructure array. Nanoscale patterning is caused at an interface of a resist layer by light passed through a focusing layer. By such nanoscale patterning, a nanostructure array is fabricated on a substrate in various ways. As the focusing layer, an array of beads or lenses is used, and a pattern of the resist layer may include a nanoscale pore-opening and an undercut structure connected to a lower portion of the opening. The method facilitates adjustment of the size and shape of nanostructures and the interval between the nanostructures. Also, performance of the device including the nanostructure array can be improved. In particular, the method and device result in a sensor having improved sensitivity and reliability optimized for an environment and purpose to be used.
摘要翻译：提供制造纳米结构阵列的方法和包括纳米结构阵列的器件。通过穿过聚焦层的光在抗蚀剂层的界面处引起纳米级图案化。通过这种纳米尺度的图案化，以各种方式在衬底上制造纳米结构阵列。作为聚焦层，使用珠或透镜的阵列，并且抗蚀剂层的图案可以包括连接到开口的下部的纳米级孔隙和底切结构。该方法有助于调整纳米结构的尺寸和形状以及纳米结构之间的间隔。此外，可以提高包括纳米结构阵列的器件的性能。特别地，该方法和装置导致传感器具有针对要使用的环境和目的优化的改进的灵敏度和可靠性。

10. 发明申请

US20090143373A1 QUINOLONE CARBOXYLIC ACID-SUBSTITUTED RIFAMYCIN DERIVATIVES 有权
标题翻译：喹诺酮羧酸取代的赖氨明衍生物
公开(公告)号：US20090143373A1
公开(公告)日：2009-06-04
申请号：US12269652
申请日：2008-11-12
申请人： Charles Z. Ding , Yafei Jin , Keith Combrink , In Ho Kim
发明人： Charles Z. Ding , Yafei Jin , Keith Combrink , In Ho Kim
IPC分类号： A61K31/4709 , C07D498/04 , C07D471/20 , A61K31/5383 , A61P31/04
CPC分类号： C07D491/20 , C07D498/16
摘要： The compounds include substituted rifamycin derivatives in which a quinolone carboxylic acid pharmacophore is covalently bonded to a benzoxazinorifamycin or a spiropiperidinorifamycin. The rifamycin derivatives are useful as antimicrobial agents and are effective against a number of human and veterinary Gram positive and Gram negative pathogens. The advantage of the inventive compounds is that both the rifamycin and quinolone antibacterial pharmacophores are co-delivered with matched pharmacokinetics to the targeted pathogens of interests. Delivery of multiple antibacterial pharmacophores simultaneously to the targeted pathogens has the maximum chance of achieving synergy and minimizing the development of resistance to the antibiotics given.
摘要翻译：化合物包括取代的利福霉素衍生物，其中喹诺酮羧酸药效团与苯并恶嗪利福霉素或螺哌啶利多霉素共价键合。利福霉素衍生物可用作抗微生物剂，并且对许多人和兽医革兰氏阳性和革兰氏阴性病原体有效。本发明化合物的优点在于利福霉素和喹诺酮类抗菌药代动力剂与匹配的药代动力学共同输送到感兴趣的靶向病原体。同时向目标病原体递送多个抗菌药代动力，最大限度地实现协同作用，并最大限度地减少给予抗生素的耐药性。

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