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    • 1. 发明授权
    • Relocatable built-in self test (BIST) elements for relocatable mixed-signal elements
    • 可重定位的内置自检(BIST)元素,用于可重定位的混合信号元素
    • US07373622B2
    • 2008-05-13
    • US11129547
    • 2005-05-13
    • Scott C. SavageDonald T. McGrathRobert D. WaldronKenneth G. Richardson
    • Scott C. SavageDonald T. McGrathRobert D. WaldronKenneth G. Richardson
    • G06F17/50
    • G01R31/31704G01R31/3167
    • An apparatus including a base layer of a platform application specific integrated circuit (ASIC), a mixed-signal function and a built-in self test (BIST) function. The base layer of the platform ASIC generally includes a plurality of pre-diffused regions disposed around a periphery of the platform ASIC. Each of the pre-diffused regions is generally configured to be metal-programmable. The mixed-signal function may include two or more sub-functions formed with a metal mask set placed over a first number of the plurality of pre-diffused regions. The BIST function may be formed with a metal mask set placed over a second number of the plurality of pre-diffused regions. The BIST function may be configured to test the mixed-signal function and present a digital signal indicating an operating condition of the mixed-signal function.
    • 一种包括平台专用集成电路(ASIC)的基础层,混合信号功能和内置自检(BIST)功能的装置。 平台ASIC的基础层通常包括围绕平台ASIC的外围设置的多个预扩散区域。 每个预扩散区域通常被配置为金属可编程的。 混合信号功能可以包括由设置在多个预扩散区域的第一数量上的金属掩模组形成的两个或更多个子功能。 BIST功能可以形成有放置在多个预扩散区域的第二数量上的金属掩模组。 BIST功能可以被配置为测试混合信号功能并呈现指示混合信号功能的操作条件的数字信号。
    • 7. 发明授权
    • R-cells containing CDM clamps
    • 含有CDM夹的R细胞
    • US07272802B2
    • 2007-09-18
    • US11126880
    • 2005-05-11
    • Donald T. McGrathScott C. Savage
    • Donald T. McGrathScott C. Savage
    • G06F17/50
    • H01L27/0251H01L2924/0002H03K19/173H01L2924/00
    • A method for producing a chip is disclosed. A first step of the method may involve first fabricating the chip only up to and including a first metal layer such that a core region of the chip has an array of cells, each of the cells having a plurality of transistors. A second step of the method may be to design a plurality of upper metal layers above the first metal layer in response to a custom design created after the first fabricating has started, the upper metal layers interconnecting a plurality of the cells to form an electrostatic discharge clamp at a power domain crossing. A third step may include second fabricating the chip to add the upper metal layers.
    • 公开了一种芯片的制造方法。 该方法的第一步可以包括首先制造仅包括第一金属层并且包括第一金属层的芯片,使得芯片的芯区域具有单元阵列,每个单元具有多个晶体管。 该方法的第二步可以是响应于在第一制造开始之后产生的定制设计,在第一金属层上方设计多个上金属层,上金属层将多个单元互连以形成静电放电 夹在电源交叉口。 第三步骤可以包括第二制造芯片以添加上金属层。