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    • 1. 发明授权
    • Accelerated etching of chromium
    • 加速蚀刻铬
    • US06843929B1
    • 2005-01-18
    • US09514526
    • 2000-02-28
    • Donald S. FarquharEdmond O. FeyElizabeth FosterMichael J. KlodowskiPaul G. Rickerl
    • Donald S. FarquharEdmond O. FeyElizabeth FosterMichael J. KlodowskiPaul G. Rickerl
    • C23F1/26H01L21/3213B44C1/22
    • H01L21/32134C23F1/26
    • A method and associated structure for increasing the rate at which a chromium volume is etched when the chromium body is contacted by an acid solution such as hydrochloric acid. The etch rate is increased by a metallic or steel body in continuous electrical contact with the chromium volume, both of which are in continuous contact with the acid solution. At a temperature between about 21° C. and about 52° C., and a hydrochloric acid concentration (molarity) between about 1.2 M and about 2.4 M, the etch rate is at least a factor of about two greater than an etch rate that would occur in an absence of the steel body. In one embodiment, the chromium volume is a chromium layer that rests upon a conductive layer that includes a metal such as copper, wherein the acid solution is not in contact with the conductive layer. In another embodiment, the chromium volume is a chromium layer located under a conductive layer that includes a metal such as copper, wherein the steel body and the acid solution both contact the chromium layer through an opening in the conductive layer such that the opening exposes the chromium layer.
    • 一种用于提高当铬体与诸如盐酸的酸溶液接触时铬体积被蚀刻的速率的方法和相关结构。 蚀刻速率由与铬体积连续电接触的金属或钢体增加,两者都与酸溶液连续接触。 在约21℃至约52℃的温度和约1.2M至约2.4M之间的盐酸浓度(摩尔浓度)之间,蚀刻速率至少比蚀刻速率大约两倍, 将在没有钢体的情况下发生。 在一个实施方案中,铬体积是沉积在包括诸如铜的金属的导电层上的铬层,其中酸溶液不与导电层接触。 在另一个实施方案中,铬体积是位于导电层下方的铬层,该层包括诸如铜的金属,其中钢体和酸溶液都通过导电层中的开口接触铬层,使得开口暴露于 铬层。
    • 5. 发明授权
    • Photoimageable dielectric epoxy resin system film
    • 可光成像介电环氧树脂体系膜
    • US06835533B2
    • 2004-12-28
    • US10781073
    • 2004-02-18
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • G03F7038
    • G03F7/0385G03F7/038H05K3/0023H05K3/4644H05K3/4676Y10T428/24851
    • A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0% to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
    • 一种制造电路化基板的方法,其减少短路,并且不需要烘烤和得到的膜。 该方法使用溶剂含量小于约5%的光致成像电介质膜,当固化时玻璃化转变温度大于约110℃。提供具有约95%至约100的光致成像电介质膜 %固体,并且包含:0%至约30%的固体,颗粒状流变改性剂; 约70%至约100%的环氧树脂体系的固体(20℃的液体),包含:约85%至约99.9%的环氧树脂; 和约0.1至15份的总树脂重量,阳离子光引发剂; 0%至约5%的溶剂; 将光致成像电介质膜施加到电路化基板上; 并将膜暴露于光化辐射。
    • 6. 发明授权
    • Method of fabricating circuitized structures
    • 制造电路结构的方法
    • US06706464B2
    • 2004-03-16
    • US10345561
    • 2003-01-16
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • G03F740
    • G03F7/0385G03F7/038H05K3/0023H05K3/4644H05K3/4676Y10T428/24851
    • A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film, is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier, from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C. comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0 to about 5% solvent, applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
    • 一种制造电路化基板的方法,其减少短路,并且不需要烘烤和得到的膜。 该方法采用溶剂含量小于约5%的光致成像电介质膜,当固化时玻璃化转变温度大于约110℃。提供了可见光电介质膜,其具有约95%至约 100%固体,并且包含:固体的0%至约30%的颗粒状流变改性剂,约70%至约100%的环氧树脂体系的固体(液体在20℃,包括:来自 约85%至约99.9%的环氧树脂;和约0.1至15份的总树脂重量,阳离子光引发剂; 0至约5%的溶剂,将可光成像的电介质膜施加到电路化基板;以及将膜暴露于 光化辐射。
    • 9. 发明授权
    • Method of fabricating circuitized structures
    • 制造电路结构的方法
    • US06528218B1
    • 2003-03-04
    • US09808334
    • 2001-03-14
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • G03F711
    • G03F7/0385G03F7/038H05K3/0023H05K3/4644H05K3/4676Y10T428/24851
    • A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0 to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
    • 一种制造电路化基板的方法,其减少短路,并且不需要烘烤和得到的膜。 该方法使用溶剂含量小于约5%的光致成像电介质膜,当固化时玻璃化转变温度大于约110℃。提供具有约95%至约100的光致成像电介质膜 %固体,并且包含:0%至约30%的固体,颗粒状流变改性剂; 约70%至约100%的环氧树脂体系的固体(20℃的液体),包含:约85%至约99.9%的环氧树脂; 和约0.1至15份的总树脂重量,阳离子光引发剂; 0至约5%的溶剂; 将光致成像电介质膜施加到电路化基板上; 并将膜暴露于光化辐射。