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    • 4. 发明授权
    • Increased well depth hact using a strained layer superlattice
    • 使用应变层超晶格增加深度深度
    • US5283444A
    • 1994-02-01
    • US918830
    • 1992-07-24
    • Robert N. SacksThomas W. GrudkowskiDonald E. CullenWilliam J. Tanski
    • Robert N. SacksThomas W. GrudkowskiDonald E. CullenWilliam J. Tanski
    • H01L29/15H03H9/02H01L29/161H01L29/205
    • H03H9/02976H01L29/155
    • A heterojunction acoustic charge transport device (HACT) having a charge transport channel 39 which is sandwiched between upper and lower charge confinement layers, 14,20, has the charge transport channel 39 made of a Strained Layer Superlattice (SLS) comprising alternating deep-well semiconductor layers 40, that provide a deep quantum well depth, and strain relief layers 42 that provide strain relief to prevent dislocations from occurring due to lattice mismatches between the InGaAs layers within the channel 39 and the charge confinement layers 14,20, thereby allowing the overall thickness of the channel 39 to be at least as wide as conventional HACT devices that use a GaAs channel. The strain relief layers 42 may be narrowly sized to allow tunneling of electrons across the entire channel 39 thereby allowing the charge to move as a single group, or alternatively, widely sized to provide separate isolated channels thereby allowing the charge to move in separate groups. Both embodiments provide increased quantum well depth in the channel 39 over conventional HACT devices.
    • 具有夹在上电荷限制层14和下电荷限制层14,20之间的电荷传输通道39的异质结声电荷输送装置(HACT)具有由包含交替深阱的应变层超晶格(SLS)制成的电荷传输通道39 提供深量子阱深度的半导体层40和应变消除层42,其提供应变消除以防止由于沟道39内的InGaAs层与电荷限制层14,20之间的晶格失配而发生位错,从而允许 通道39的总厚度至少与使用GaAs通道的常规HACT器件一样宽。 应变消除层42的尺寸可以窄,以允许电子穿过整个通道39,从而允许电荷作为单个组移动,或者可选地被广泛地设置以提供单独的隔离通道,从而允许电荷以分开的组移动。 两个实施例相对于传统的HACT装置在通道39中提供增加的量子阱深度。