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1. 发明申请

US20070298551A1 Fabrication of silicon nano wires and gate-all-around MOS devices 审中-公开
标题翻译：硅纳米线和栅极全能MOS器件的制造
公开(公告)号：US20070298551A1
公开(公告)日：2007-12-27
申请号：US11705036
申请日：2007-02-12
申请人： Didier Bouvet , Kirsten Moselund , Mihai Ionescu
发明人： Didier Bouvet , Kirsten Moselund , Mihai Ionescu
IPC分类号： H01L21/336 , C23F1/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall protection. The core dimensions of the NWs are adjustable with the integration sequences: they can be triangular, rectangular, quasi-circular, or an alternative polygonal shape. Depending on the length of the NWs, going from the sub-micron to millimeter range, the NWs may utilize support from anchors to the side, during certain processing steps. By changing the lithographic dimensions of the anchors compared to the NWs, the anchors may be reduced or eliminated during processing. The method covers, among other things, the integration of Gate-All-Around NW (GAA-NW) MOSFETs on a bulk semiconductor. The GAA structure may consist of a silicon core fabricated as specified in the invention, surrounded by any usable gate dielectric, and finally by a gate material, such as polysilicon or metal. The source and drain of the GAA-NW may be connected to the bulk semiconductor to avoid self heating of the device over a wide range of operating conditions. The GAA-NW MOS capacitor can also be used for the integration of a Gate-All-Around optical phase modulator (GAA modulator). The working principle for the optical modulator is modulation of the refractive index by free carrier accumulation or inversion in a MOS capacitive structure, which changes the phase of the propagating light.
摘要翻译：本发明涉及制造半导体器件的方法。公开了使用各向异性蚀刻和用于侧壁保护的间隔物的组合来实现悬浮单晶硅纳米线（NW）的方法。 NW的核心尺寸可以通过集成顺序进行调整：它们可以是三角形，矩形，准圆形或替代多边形形状。根据NW的长度，从亚微米到毫米的范围，NW可以在某些处理步骤期间利用锚的侧面的支撑。通过改变与NW相比锚固件的平版印刷尺寸，可以在处理期间减少或消除锚固件。该方法尤其涵盖了门极全能NW（GAA-NW）MOSFET在体半导体上的集成。 GAA结构可以由本发明规定的硅芯组成，被任何可用的栅极电介质包围，最后由诸如多晶硅或金属的栅极材料组成。 GAA-NW的源极和漏极可以连接到体半导体，以避免在宽范围的工作条件下器件的自热。 GAA-NW MOS电容器还可用于集成门全相位光学相位调制器（GAA调制器）。光调制器的工作原理是通过在MOS电容结构中自由载流子累积或反转来调节折射率，这改变了传播光的相位。

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