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1. 发明授权

US07192743B2 Method of producing teicoplanin 有权
标题翻译：生产替考拉宁的方法
公开(公告)号：US07192743B2
公开(公告)日：2007-03-20
申请号：US11106717
申请日：2005-04-15
申请人： Deok-Joong Youn , Ho-Myeung Ryu , Kang-Hee Lee , Dae-Sung Lim , In-Kyu Lee , Sung-Woo Kim , Hyun-Ki Paeng , Kyung-Hoi Cha
发明人： Deok-Joong Youn , Ho-Myeung Ryu , Kang-Hee Lee , Dae-Sung Lim , In-Kyu Lee , Sung-Woo Kim , Hyun-Ki Paeng , Kyung-Hoi Cha
IPC分类号： C12P1/00 , C12P21/04
CPC分类号： C12P19/60
摘要： Disclosed is a method of producing teicoplanin. The method includes purifying teicoplanin from a culture broth, obtained by culturing microorganisms capable of producing teicoplanin by a porous adsorption resin under selective elution conditions and recovering highly pure teicoplanin using activated carbon and/or ultrafiltration. In this regard, the method can further include ultrafiltration as pre-treatment before the culture broth is adsorbed into the porous adsorption resin so as to increase the purity of teicoplanin.
摘要翻译：公开了一种生产替考拉宁的方法。该方法包括通过在选择性洗脱条件下培养能够通过多孔吸附树脂生产替考拉宁的微生物获得的培养肉汤纯化替考拉宁，并使用活性炭和/或超滤回收高纯度的替考拉宁。在这方面，该方法可以在将培养液吸附到多孔吸附树脂中之前进一步包括作为预处理的超滤，以提高替考拉宁的纯度。

2. 发明申请

US20050245481A1 Method of producing teicoplanin 有权
标题翻译：生产替考拉宁的方法
公开(公告)号：US20050245481A1
公开(公告)日：2005-11-03
申请号：US11106717
申请日：2005-04-15
申请人： Deok-Joong Youn , Ho-Myeung Ryu , Kang-Hee Lee , Dae-Sung Lim , In-Kyu Lee , Sung-Woo Kim , Hyun-Ki Paeng , Kyung-Hoi Cha
发明人： Deok-Joong Youn , Ho-Myeung Ryu , Kang-Hee Lee , Dae-Sung Lim , In-Kyu Lee , Sung-Woo Kim , Hyun-Ki Paeng , Kyung-Hoi Cha
IPC分类号： C12P21/00 , A61K31/739 , C07K9/00 , C08B37/00 , C12P19/28 , C12P19/60 , C12P21/02 , G01N33/487
CPC分类号： C12P19/60
摘要： Disclosed is a method of producing teicoplanin. The method includes purifying teicoplanin from a culture broth, obtained by culturing microorganisms capable of producing teicoplanin by a porous adsorption resin under selective elution conditions and recovering highly pure teicoplanin using activated carbon and/or ultrafiltration. In this regard, the method can further include ultrafiltration as pre-treatment before the culture broth is adsorbed into the porous adsorption resin so as to increase the purity of teicoplanin.
摘要翻译：公开了一种生产替考拉宁的方法。该方法包括通过在选择性洗脱条件下培养能够通过多孔吸附树脂生产替考拉宁的微生物获得的培养肉汤纯化替考拉宁，并使用活性炭和/或超滤回收高纯度的替考拉宁。在这方面，该方法可以在将培养液吸附到多孔吸附树脂中之前进一步包括作为预处理的超滤，以提高替考拉宁的纯度。

3. 发明授权

US09305792B2 Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1) 有权
标题翻译：晶体硅晶片的纹理蚀刻剂组成和纹理蚀刻方法（1）
公开(公告)号：US09305792B2
公开(公告)日：2016-04-05
申请号：US13816308
申请日：2011-08-12
申请人： Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
发明人： Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
IPC分类号： H01L21/302 , C09K13/00 , C09K13/06 , H01L31/18 , C09K13/08 , C09K13/02 , H01L31/0236
CPC分类号： H01L21/302 , C09K13/00 , C09K13/02 , C09K13/06 , C09K13/08 , H01L31/02363 , H01L31/182 , H01L31/1824 , Y02E10/50
摘要： Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.00001 to 10 wt % of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.
摘要翻译：本文公开了一种用于纹理化晶体硅晶片的蚀刻组合物，其包含基于组合物的总量：（A）0.1至20重量％的碱性化合物; （B）0.1〜50重量％的沸点为100℃以上的环状化合物; （C）0.00001〜10重量％的含二氧化硅的化合物; 和（D）残留水。蚀刻组合物可使晶体硅晶片的表面的光吸收最大化。

4. 发明授权

US08917912B2 Object identification system and method of identifying an object using the same 有权
标题翻译：对象识别系统及识别使用其的对象的方法
公开(公告)号：US08917912B2
公开(公告)日：2014-12-23
申请号：US13521670
申请日：2011-01-11
申请人： Dae-Sung Lim
发明人： Dae-Sung Lim
IPC分类号： G06K9/00 , G06K9/48 , G06K9/62
CPC分类号： G06K9/00664 , G06K9/6201
摘要： An object identification system calculates boundaries between real objects from images of the real objects, and calculates first indicators which correspond to each angles of a first angle section divided into a first angle gap and which varies every boundary between the calculated real objects. The object identification system extracts a virtual object having an outline firstly meet with a radiating line corresponding to each map angle of the divided into a second angle gap, and generate a set of second indicators corresponding to each map angle. The object identification system matches the first indicators into second indicators having a repeat ratio substantially equal to a repeat ratio of the first indicators in an angle section, and extracts virtual objects matched with each of the previewed real objects.
摘要翻译：对象识别系统从真实对象的图像计算真实对象之间的边界，并且计算对应于划分为第一角度间隙的第一角度部分的每个角度并且改变计算出的实际对象之间每个边界的第一指示符。物体识别系统提取具有轮廓的虚拟对象首先与对应于被划分为第二角度间隙的每个映射角度的辐射线相遇，并且生成与每个映射角对应的一组第二指示符。对象识别系统将第一指示符与第二指示符相匹配，其中第二指示符的重复比基本上等于角度部分中的第一指示符的重复比率，并且提取与预览的实际对象中的每一个匹配的虚拟对象。

5. 发明申请

US20130143403A1 TEXTURE-ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND METHOD FOR TEXTURE-ETCHING (1) 有权
标题翻译：用于晶体硅沉积的纹理蚀刻组合物和纹理蚀刻方法（1）
公开(公告)号：US20130143403A1
公开(公告)日：2013-06-06
申请号：US13816308
申请日：2011-08-12
申请人： Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
发明人： Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
IPC分类号： H01L21/302
CPC分类号： H01L21/302 , C09K13/00 , C09K13/02 , C09K13/06 , C09K13/08 , H01L31/02363 , H01L31/182 , H01L31/1824 , Y02E10/50
摘要： Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.00001 to 10 wt % of a silica-containing compound; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.
摘要翻译：本文公开了一种用于纹理化晶体硅晶片的蚀刻组合物，其包含基于组合物的总量：（A）0.1至20重量％的碱性化合物; （B）0.1〜50重量％的沸点为100℃以上的环状化合物; （C）0.00001〜10重量％的含二氧化硅的化合物; 和（D）残留水。蚀刻组合物可使晶体硅晶片的表面的光吸收最大化。

6. 发明申请

US20130137278A1 TEXTURE-ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND METHOD FOR TEXTURE-ETCHING (2) 审中-公开
标题翻译：用于晶体硅晶体的纹理蚀刻组合物和纹理蚀刻方法（2）
公开(公告)号：US20130137278A1
公开(公告)日：2013-05-30
申请号：US13816294
申请日：2011-08-12
申请人： Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
发明人： Hyung-Pyo Hong , Jae-Youn Lee , Dae-Sung Lim
IPC分类号： H01L21/02
CPC分类号： H01L21/02 , C09K13/02 , H01L31/02363 , Y02E10/50
摘要： Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.000001 to 10 wt % of a fluorine-based surfactant; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer.
摘要翻译：本文公开了一种用于纹理化晶体硅晶片的蚀刻组合物，其包含基于组合物的总量：（A）0.1至20重量％的碱性化合物; （B）0.1〜50重量％的沸点为100℃以上的环状化合物; （C）0.000001〜10重量％的氟系表面活性剂; 和（D）残留水。蚀刻组合物可使晶体硅晶片的表面的光吸收最大化。

7. 发明申请

US20120321199A1 OBJECT IDENTIFICATION SYSTEM AND METHOD OF IDENTIFYING AN OBJECT USING THE SAME 有权
标题翻译：对象识别系统及使用该目标识别对象的方法
公开(公告)号：US20120321199A1
公开(公告)日：2012-12-20
申请号：US13521670
申请日：2011-01-11
申请人： Dae-Sung Lim
发明人： Dae-Sung Lim
IPC分类号： G06K9/48
CPC分类号： G06K9/00664 , G06K9/6201
摘要： An object identification system calculates boundaries between real objects from images of the real objects, and calculates first indicators which correspond to each angles of a first angle section divided into a first angle gap and which varies every boundary between the calculated real objects. The object identification system extracts a virtual object having an outline firstly meet with a radiating line corresponding to each map angle of the divided into a second angle gap, and generate a set of second indicators corresponding to each map angle. The object identification system matches the first indicators into second indicators having a repeat ratio substantially equal to a repeat ratio of the first indicators in an angle section, and extracts virtual objects matched with each of the previewed real objects.
摘要翻译：对象识别系统从真实对象的图像计算真实对象之间的边界，并且计算对应于划分为第一角度间隙的第一角度部分的每个角度并且改变计算出的实际对象之间每个边界的第一指示符。物体识别系统提取具有轮廓的虚拟对象首先与对应于被划分为第二角度间隙的每个映射角度的辐射线相遇，并且生成与每个映射角对应的一组第二指示符。对象识别系统将第一指示符与第二指示符相匹配，其中第二指示符的重复比基本上等于角度部分中的第一指示符的重复比率，并且提取与预览的实际对象中的每一个匹配的虚拟对象。

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