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1. 发明专利

JP2008135371A Secondary battery active substance and secondary battery 审中-公开
标题翻译：二次电池活性物质和二次电池
公开(公告)号：JP2008135371A
公开(公告)日：2008-06-12
申请号：JP2007248139
申请日：2007-09-25
申请人： Denso Corp , Univ Of Tokyo , 国立大学法人東京大学 , 株式会社デンソー
发明人： FUKAYA ATSUSHI , USAMI KYOHEI , AWANO NAOMI , SUGAWARA TADASHI , MATSUSHITA MICHIO , KOMATSU EIJI
IPC分类号： H01M4/60 , H01M4/36
CPC分类号： H01M10/052 , C08L53/00 , H01M4/137 , H01M4/364 , H01M4/60 , H01M4/608 , H01M2004/021 , H01M2004/028
摘要： PROBLEM TO BE SOLVED: To provide a secondary battery which has an excellent big current charging/discharging characteristics and an high energy density as well.
SOLUTION: The secondary battery is provided with a cathode of a conductive polymer compound as expressed in a formula (B) or (F). The conductive polymer compound works as an active substance and is conductive by itself and therefore an energy density can be high since a conductive auxiliary agent can be dispensed with. In the formula (B) and (F), n is a positive integer and m is an integral number of 1 to 10.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的大电流充电/放电特性和高能量密度的二次电池。解决方案：二次电池具有如式（B）或（F）所示的导电聚合物化合物的阴极。导电性高分子化合物作为活性物质起作用，其本身是导电性的，因此能够省去导电性助剂，能量密度高。在式（B）和（F）中，n是正整数，m是1至10的整数。版权所有：（C）2008，JPO＆INPIT

2. 发明专利

JP2010199100A Method of manufacturing organic semiconductor element 审中-公开
标题翻译：制造有机半导体元件的方法
公开(公告)号：JP2010199100A
公开(公告)日：2010-09-09
申请号：JP2009038658
申请日：2009-02-20
申请人： Univ Of Tokyo , 国立大学法人東京大学
发明人： SUGAWARA TADASHI , ITO TAKURO , MATSUSHITA MICHIO , HIGUCHI HIROYUKI
IPC分类号： H01L29/861 , H01L21/368 , H01L29/66 , H01L51/05
CPC分类号： H01L51/0026 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element imparted with an acquired function, by setting or changing a function of the semiconductor element after manufactured.
SOLUTION: This organic semiconductor element includes at least two electrodes arranged each other with a space on a bipolar organic semiconductor layer, and a back gate disposed on an opposite side opposite to the organic semiconductor layer with an insulating film therebetween. In the organic semiconductor element, a gate voltage is impressed to the organic semiconductor element at the first temperature of generating a bias stress effect, to generate a positive charge or negative charge in the organic semiconductor layer, the generated positive charge or negative charge is trapped by the bias stress effect, the organic semiconductor element is cooled to a temperature of the second temperature at which the bias effect is frozen, or less. under a gate voltage impressed state, to fix the trapped positive charge or negative charge, and the impression of the gate voltage is removed to inject a charge reverse to the fixed positive charge or negative charge as a carrier, into the organic semiconductor layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过设定或改变制造后的半导体元件的功能，提供赋予所获得的功能的半导体元件。解决方案：该有机半导体元件包括在双极有机半导体层上彼此间隔开间隔的至少两个电极，以及设置在与有机半导体层相对的相对侧上的绝缘膜之间具有绝缘膜的背栅。在有机半导体元件中，在产生偏置应力效应的第一温度下，向有机半导体元件施加栅极电压，以在有机半导体层中产生正电荷或负电荷，产生的正电荷或负电荷被捕获通过偏置应力效应，有机半导体元件被冷却到偏压效应被冻结的第二温度的温度以下。在栅极电压施加状态下，固定捕获的正电荷或负电荷，并且去除栅极电压的印象，以将作为载体的固定正电荷或负电荷的电荷反向注入到有机半导体层中。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010199099A Method of controlling threshold voltage in organic electric field effect transistor 审中-公开
标题翻译：有机电场效应晶体管中控制电压的方法
公开(公告)号：JP2010199099A
公开(公告)日：2010-09-09
申请号：JP2009038657
申请日：2009-02-20
申请人： Univ Of Tokyo , 国立大学法人東京大学
发明人： SUGAWARA TADASHI , ITO TAKURO , MATSUSHITA MICHIO
IPC分类号： H01L29/786 , H01L21/336 , H01L51/05
CPC分类号： H01L51/0026 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： PROBLEM TO BE SOLVED: To restrain a bias stress effect in an organic field effect transistor, and to control concurrently a threshold voltage to a fixed value.
SOLUTION: This method of controlling posteriori the threshold voltage in the organic field effect transistor includes a step of impressing the first value of gate voltage to the organic field effect transistor, at the first temperature of generating the bias stress effect, so as to generate the bias stress effect, and a step of obtaining the organic field effect transistor using the first value as the threshold voltage at a temperature of the second temperature or less, by cooling the transistor to the temperature of the second temperature at which the bias stress effect is frozen, or less, under the conditions where the first value of gate voltage is applied.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了抑制有机场效应晶体管中的偏置应力效应，并且同时将阈值电压控制为固定值。解决方案：这种在有机场效应晶体管中后验阈值电压的方法包括在产生偏置应力效应的第一温度下施加栅极电压的第一值到有机场效应晶体管的步骤，以便以产生偏置应力效应，以及通过将晶体管冷却至第二温度的温度，在第二温度或更低的温度下，使用第一值作为阈值电压获得有机场效应晶体管的步骤，在施加栅极电压的第一值的条件下，应力效应被冻结或更小。版权所有（C）2010，JPO＆INPIT

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