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1. 发明申请

US20060187403A1 Micro polymerization catalyzed by external acid source for chemical lithography 审中-公开
标题翻译：用于化学光刻的外部酸源催化的微聚合
公开(公告)号：US20060187403A1
公开(公告)日：2006-08-24
申请号：US11330088
申请日：2006-01-12
申请人： Peng Yao , Dennis Prather , Janusz Murakowski , Garrett Schneider
发明人： Peng Yao , Dennis Prather , Janusz Murakowski , Garrett Schneider
IPC分类号： G02F1/13
CPC分类号： G03F7/0002 , B41M1/30 , B41M1/305 , B41M5/368 , B82Y10/00 , B82Y40/00
摘要： A method for generating images in polymers comprising: preparing a template with an extruding desired pattern; contacting a surface of a polymer with a desired pattern of the extruded surface of the template; treating the surface of the polymer with at least one of a liquid acid and vapor; treating the surface of the polymer with a high temperature for crosslinking; separating the template and polymer and revealing an acid imprint of the desired pattern on the surface of the polymer; baking the polymer to drive diffusion of the acid; and developing the polymer with at least one of a wet and dry process to produce a negative pattern in the polymer.
摘要翻译：一种用于在聚合物中产生图像的方法，包括：制备具有挤出所需图案的模板; 使聚合物的表面与模板的挤出表面的期望图案接触; 用液体酸和蒸气中的至少一种处理聚合物的表面; 用高温处理聚合物表面进行交联; 分离模板和聚合物，并在聚合物的表面上露出所需图案的酸性印迹; 烘烤聚合物以驱动酸的扩散; 并用湿和干法中的至少一种显影聚合物，以在聚合物中产生阴性图案。

2. 发明申请

US20070001161A1 FABRICATION OF QUANTUM DOTS EMBEDDED IN THREE-DIMENSIONAL PHOTONIC CRYSTAL LATTICE 失效
标题翻译：嵌入三维光子晶体尺寸的量子点的制作
公开(公告)号：US20070001161A1
公开(公告)日：2007-01-04
申请号：US11427832
申请日：2006-06-30
申请人： Janusz Murakowski , Garrett Schneider , Dennis Prather
发明人： Janusz Murakowski , Garrett Schneider , Dennis Prather
IPC分类号： H01L31/00
CPC分类号： G02B6/1225 , B82Y10/00 , B82Y20/00 , G02B6/10 , Y10S977/774 , Y10S977/778 , Y10S977/814 , Y10T428/249953 , Y10T428/249969
摘要： In one embodiment, a method of producing an optoelectronic nanostructure includes preparing a substrate; providing a quantum well layer on the substrate; etching a volume of the substrate to produce a photonic crystal. The quantum dots are produced at multiple intersections of the quantum well layer within the photonic crystal. Multiple quantum well layers may also be provided so as to form multiple vertically aligned quantum dots. In another embodiment, an optoelectronic nanostructure includes a photonic crystal having a plurality of voids and interconnecting veins; a plurality of quantum dots arranged between the plurality of voids, wherein an electrical connection is provided to one or more of the plurality of quantum dots through an associated interconnecting vein.
摘要翻译：在一个实施方案中，制备光电子纳米结构的方法包括制备基底; 在衬底上提供量子阱层; 蚀刻衬底的体积以产生光子晶体。量子点在光子晶体内的量子阱层的多个交点处产生。还可以提供多个量子阱层，以形成多个垂直对准的量子点。在另一个实施例中，光电子纳米结构包括具有多个空隙和互连静脉的光子晶体; 布置在所述多个空隙之间的多个量子点，其中通过相关联的互连静脉将电连接提供给所述多个量子点中的一个或多个。

3. 发明申请

US20060286693A1 FABRICATION OF THREE-DIMENSIONAL PHOTONIC CRYSTALS IN GALLIUM ARSENIDE-BASED MATERIAL 审中-公开
标题翻译：三氧化二铝基材料制备三维光子晶体
公开(公告)号：US20060286693A1
公开(公告)日：2006-12-21
申请号：US11424362
申请日：2006-06-15
申请人： Janusz Murakowski , Christopher Schuetz , Dennis Prather
发明人： Janusz Murakowski , Christopher Schuetz , Dennis Prather
IPC分类号： H01L21/00
CPC分类号： H01L21/00 , B82Y20/00 , G02B6/1225 , G02B6/136
摘要： The present invention is an efficient method for the fabrication of three-dimensional structures in GaAs-based materials. The method is particularly suitable for the realization of 3D photonic crystals. The method relies on the observation that the oxidation rate of Ga1-xA1xAs in water-vapor atmosphere is a strong function of the aluminum content in the alloy. Thus, a stack of Ga1-xA1xAs layers with varying concentration of A1 is grown on GaAs substrate. The top surface is patterned with an array of holes, which are then transferred to the underlying layers by dry etching. Subjecting the so-prepared structure to oxidation in water vapor atmosphere at an elevated temperature results in lateral oxidation of the material exposed by the etched holes. The lateral oxidation depth depends on aluminum content in a particular layer. The oxide is then removed by an aqueous solution of hydrofluoric acid and a three-dimensional array of voids ensues. The shape of the voids depends on the variation of aluminum content in the layers of the stack. Depending on the 2D pattern on top surface of the structure, various arrays of voids can be realized.
摘要翻译：本发明是用于制造基于GaAs的材料中的三维结构的有效方法。该方法特别适用于实现3D光子晶体。该方法依赖于观察到，在水蒸汽气氛中，Ga 1-x A 1 x As As的氧化速率是合金中铝含量的强函数。因此，在GaAs衬底上生长具有变化的A 1浓度的Ga 1-x A 1 As x As层的堆叠。顶表面被图案化成孔，其然后通过干蚀刻转移到下面的层。使如此制备的结构在高温下在水蒸汽气氛中氧化导致被蚀刻孔暴露的材料的侧向氧化。横向氧化深度取决于特定层中的铝含量。然后通过氢氟酸的水溶液除去氧化物，并且随后发生三维空隙排列。空隙的形状取决于堆叠层中铝含量的变化。根据结构顶表面上的2D图案，可以实现各种空隙阵列。

4. 发明申请

US20050164501A1 Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination 失效
标题翻译：使用电子束和紫外光刻组合制造光子晶体电路的方法
公开(公告)号：US20050164501A1
公开(公告)日：2005-07-28
申请号：US10504518
申请日：2003-02-14
申请人： Dennis Prather , jANUSZ Murakowski
发明人： Dennis Prather , jANUSZ Murakowski
IPC分类号： G02B6/12 , G02B6/122 , G02B6/134 , G02B6/136 , G03F7/00 , G03F7/20 , H01L21/302 , H01L21/461
CPC分类号： B82Y20/00 , G02B6/1225 , G02B6/1347 , G02B6/136 , G02B2006/12173 , G03F7/0005
摘要： A process for making photonic crystal circuit and a photonic crystal circuit consisting of regularly-distributed holes in a high index dielectric material, and controllably-placed defects within this lattice, creating waveguides, cavities, etc. for photonic devices. The process is based upon the discovery that some positive ultraviolet (UV) photoresists are electron beam sensitive and behave like negative electron beam photoresists. This permits creation of photonic crystal circuits using a combination of electron beam and UV exposures. As a result, the process combines the best features of the two exposure methods: the high speed of UV exposure and the high resolution and control of the electron beam exposure. The process also eliminates the need for expensive photomasks.
摘要翻译：一种制造光子晶体电路的工艺和由高折射率介电材料中规则分布的孔组成的光子晶体电路，以及在该晶格内可控地放置的缺陷，为光子器件产生波导，空腔等。该过程基于以下发现：一些正的紫外（UV）光刻胶是电子束敏感的并且表现得像负电子束光致抗蚀剂。这允许使用电子束和UV曝光的组合创建光子晶体电路。因此，该方法结合了两种曝光方法的最佳特征：紫外线曝光的高速度和电子束曝光的高分辨率和控制。该过程也消除了昂贵的光掩模的需要。

5. 发明申请

US20070285803A1 Electromagnetic/optical tweezers using a full 3D negative-refraction flat lens 失效
$Electromagnetic/optical tweezers using a full 3D negative-refraction flat lens$
标题翻译：使用全3D负折射平面透镜的电磁/光镊
公开(公告)号：US20070285803A1
公开(公告)日：2007-12-13
申请号：US11786670
申请日：2007-04-12
申请人： Dennis Prather , Zhaolin Lu , Janusz Murakowski , Shouyuan Shi , Garrett Schneider
发明人： Dennis Prather , Zhaolin Lu , Janusz Murakowski , Shouyuan Shi , Garrett Schneider
IPC分类号： G21K1/06
CPC分类号： G21K1/006 , Y10S977/901
摘要： Described herein are electromagnetic traps or tweezers. Desired results are achieved by combining two recently developed techniques, 3D negative refraction flat lenses (3DNRFLs) and optical tweezers. The very unique advantages of using 3DNRFLs for electromagnetic traps have been demonstrated. Super-resolution and short focal distance of the flat lens result in a highly focused and strongly convergent beam, which is a key requirement for a stable and accurate electromagnetic trap. The translation symmetry of 3DNRFL provides translation-invariance for imaging, which allows an electromagnetic trap to be translated without moving the lens, and permits a trap array by using multiple sources with a single lens.
摘要翻译：这里描述的是电磁陷阱或镊子。期望的结果是通过组合两种最近开发的技术，3D负折射平面透镜（3DNRFL）和光学镊子来实现的。已经证明了将3DNRFL用于电磁陷阱的独特优点。平面透镜的超分辨率和短焦距导致高度聚焦和强烈收敛的光束，这是稳定和精确的电磁阱的关键要求。 3DNRFL的平移对称性为成像提供了平移不变性，允许在不移动透镜的情况下平移电磁阱，并通过使用单个透镜使用多个源来允许陷阱阵列。

6. 发明申请

US20060099534A1 Method for fabricating optical devices in photonic crystal structures 失效
标题翻译：在光子晶体结构中制造光器件的方法
公开(公告)号：US20060099534A1
公开(公告)日：2006-05-11
申请号：US10525763
申请日：2003-08-26
申请人： Janusz Murakowski , Dennis Prather
发明人： Janusz Murakowski , Dennis Prather
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , B82Y20/00 , G02B1/005 , G02B6/1225 , G02B6/13 , G03F7/0005 , G03F7/001 , Y10S430/143
摘要： A method for manufacturing optical components in a three-dimensional photonic crystal lattice. A first resist (9) is coated on a substrate (10) and exposed to an e-beam (11), to produce an imaged area (12). Another resist coating is applied to thicken the resist (13) and an interference exposure (15) is used to image the result. This is developed to form periodic voids (16), which may be filled with a materials having a high refractive index to form a pattern (18 and 12) when the resist (13) is removed.
摘要翻译：一种用于制造三维光子晶格中的光学部件的方法。第一抗蚀剂（9）涂覆在基材（10）上并暴露于电子束（11），以产生成像区域（12）。施加另一抗蚀剂涂层以使抗蚀剂（13）变厚，并且使用干涉曝光（15）对结果进行成像。这被开发以形成周期性空隙（16），当去除抗蚀剂（13）时，其可以填充具有高折射率的材料以形成图案（18和12）。

7. 发明申请

US20070097470A1 ZERO-ALIGNMENT METHOD FOR TUNABLE FABRICATION OF THREE-DIMENSIONAL PHOTONIC CRYSTALS BY MULTIPLE-EXPOSURE LASER INTERFERENCE USING DIFFRACTION GRATINGS PATTERNED ON A SINGLE MASK 失效
标题翻译：通过使用在单个掩模上绘制的衍射光栅的多次曝光激光干涉来三维制造三维光子晶体的零对准方法
公开(公告)号：US20070097470A1
公开(公告)日：2007-05-03
申请号：US11307148
申请日：2006-01-25
申请人： Garrett Schneider , Eric Wetzel , Dennis Prather
发明人： Garrett Schneider , Eric Wetzel , Dennis Prather
IPC分类号： G03H1/10
CPC分类号： G03H1/10 , B82Y20/00 , G02B1/005 , G02B6/1225
摘要： A method for fabricating three-dimensional photonic crystal structures includes providing a layer of photosensitive material; introducing a laser beams into the material; reintroducing the laser beams into the photosensitive material during a second exposure; combining results from at least the first and second exposures to produce a three-dimensionally periodic pattern in the photosensitive material. A related system includes a laser source; a grating array having a plurality of diffraction gratings located thereon; a mask plate located on a photoresist layer and arranged in registration with the grating array; a rotating shutter arranged between the grating array and the laser source, said rotating shutter being suitable for periodically blocking light from the laser source; wherein each of the diffraction gratings is positioned and oriented so as to converge all first-order diffracted spots to a common point lying in a plane of a back side of the mask plate.
摘要翻译：制造三维光子晶体结构的方法包括提供感光材料层; 将激光束引入材料; 在第二曝光期间将激光束重新引入感光材料; 将至少第一和第二曝光的结果组合以在感光材料中产生三维周期性图案。相关系统包括激光源; 具有位于其上的多个衍射光栅的光栅阵列; 位于光致抗蚀剂层上并与光栅阵列对准布置的掩模板; 设置在光栅阵列和激光源之间的旋转快门，所述旋转快门适于周期性地阻挡来自激光源的光; 其中每个衍射光栅被定位和定向成将所有一级衍射光点会聚到位于掩模板背面平面中的公共点。

8. 发明授权

US10396421B2 Slot coupled directional coupler and directional filters in multilayer substrate 有权
公开(公告)号：US10396421B2
公开(公告)日：2019-08-27
申请号：US15666637
申请日：2017-08-02
申请人： Yifei Zhang , Shouyuan Shi , Richard Martin , Dennis Prather
发明人： Yifei Zhang , Shouyuan Shi , Richard Martin , Dennis Prather
IPC分类号： H01P5/18 , H01P1/203 , H01P1/212
摘要： Traveling-wave directional filters (DFs) with multiple coupling slots are disclosed. A traveling-wave directional filter may include two terminating conductive strips in a top circuit layer of a substrate, a loop resonator in a bottom layer of a substrate, and a shared ground plane. Coupling slots in the ground plane may couple the conductive strips via the loop resonator.

9. 发明申请

US20140007935A1 HYBRID DIELECTRIC-METALLIC BACK REFLECTOR FOR PHOTOVOLTAIC APPLICATIONS 审中-公开
标题翻译：用于光伏应用的混合电介质金属反射器
公开(公告)号：US20140007935A1
公开(公告)日：2014-01-09
申请号：US13885903
申请日：2011-11-18
申请人： James Mutitu , Shouyuan Shi , Dennis Prather , Allen Barnett
发明人： James Mutitu , Shouyuan Shi , Dennis Prather , Allen Barnett
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/02165 , H01L31/02168 , H01L31/02366 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device includes a photovoltaic layer configured to convert light into electrical power, a distributed Bragg reflector (DBR) layer having one to three periods disposed adjacent the photovoltaic layer, a metal layer, disposed adjacent the DBR layer, configured to reflect light passed through the photovoltaic layer to the DBR layer, and a phase matching layer disposed between the metal layer and the DBR layer, the phase matching layer configured to match a phase between the DBR layer and the metal layer over a selected wavelength band. The metal layer has a non-uniformed textured surface facing the phase matching layer. The photovoltaic device further includes an anti-reflection coating layer disposed on a top surface of the photovoltaic layer, and a substrate on which the metal layer is disposed. The substrate may be textured on a surface facing the metal layer.
摘要翻译：一种光伏器件包括被配置为将光转换成电力的光伏层，布置在布拉格反射体（DBR）层中的布置于布置于布置的布拉格反射层（DBR）层，其中一个至三个周期设置在光伏层附近，邻近该DBR层布置的金属层，所述光电层到所述DBR层，以及配置在所述金属层和所述DBR层之间的相位匹配层，所述相位匹配层被配置为使所述DBR层和所述金属层之间的相位在选定的波长带上相匹配。金属层具有面向相位匹配层的非均匀织构表面。光电器件还包括设置在光伏层的顶表面上的防反射涂层和设置金属层的基板。衬底可以在面向金属层的表面上纹理化。

10. 发明申请

US20060180762A1 Terahertz frequency band wavelength selector 失效
公开(公告)号：US20060180762A1
公开(公告)日：2006-08-17
申请号：US11401717
申请日：2006-04-11
申请人： James Kolodzey , Thomas Adam , Dennis Prather
发明人： James Kolodzey , Thomas Adam , Dennis Prather
IPC分类号： G01J5/02
CPC分类号： H01S5/30 , H01S5/3027 , H01S5/3031 , H01S5/305
摘要： A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 μm to 3000 μm. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.

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