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1. 发明授权

US6005708A Wavelength converter for binary optical signals 失效
标题翻译：用于二进制光信号的波长转换器
公开(公告)号：US6005708A
公开(公告)日：1999-12-21
申请号：US57512
申请日：1998-04-09
申请人： Denis Leclerc , Leon Goldstein , Jean-Yves Emery , Beatrice Dagens , Christopher Janz , Michael Schilling , Klaus Wunstel
发明人： Denis Leclerc , Leon Goldstein , Jean-Yves Emery , Beatrice Dagens , Christopher Janz , Michael Schilling , Klaus Wunstel
IPC分类号： G02B6/12 , G02F2/00 , G02F2/02 , H04B10/17 , G02F1/39
CPC分类号： H04B10/2914 , G02F2/004 , G02F2001/212 , G02F2001/215 , G02F2002/006
摘要： The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.
摘要翻译：本发明涉及用于光通信中的光信号的波长转换器，特别是用于路由信号。本发明具体涉及包括用于传送输出光信号的干涉仪结构的波长转换器，其中包括至少一个第一半导体光放大器的转换器第一和第二分支耦合到输入外围半导体光放大器和/或输出外围半导体光放大器，其中至少一个外围放大器的有源波导的结构被设计成使得其有效面积与约束因子的比率大于所述第一放大器的有源波导的比率。

2. 发明授权

US06271961B1 Semiconductor optical component and amplifier and wavelength converter consisting thereof 失效
标题翻译：半导体光学元件及其组成的放大器和波长转换器
公开(公告)号：US06271961B1
公开(公告)日：2001-08-07
申请号：US09318273
申请日：1999-05-25
申请人： Jean-Yves Emery , Fabienne Gaborit , Christopher Janz , François Dorgeuille , Béatrice Dagens
发明人： Jean-Yves Emery , Fabienne Gaborit , Christopher Janz , François Dorgeuille , Béatrice Dagens
IPC分类号： G02F135
CPC分类号： H01S5/4043 , H01S5/026 , H01S5/0608 , H01S5/10 , H01S5/4068 , H01S5/50
摘要： An active structure in the semiconductor die of an amplifier or converter includes a plurality of stacked active layers with different compositions. The different compositions lead to a spectral offset between the respective gain bands of the layers which widens the gain band of the amplifier or the optical bandwidth of the converter. Applications include fiber optic telecommunication networks.
摘要翻译：放大器或转换器的半导体管芯中的有源结构包括具有不同组成的多个堆叠的有源层。不同的组合物导致层的相应增益带之间的频谱偏移，其加宽放大器的增益带或转换器的光带宽。应用包括光纤电信网络。

3. 发明授权

US5982531A Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US5982531A
公开(公告)日：1999-11-09
申请号：US945589
申请日：1997-10-29
申请人： Jean-Yves Emery , Leon Goldstein , Pierre Doussiere , Jean Barrau
发明人： Jean-Yves Emery , Leon Goldstein , Pierre Doussiere , Jean Barrau
IPC分类号： H01S5/00 , H01S5/32 , H01S5/50 , H01S3/25 , H01L29/06 , H01S3/19
CPC分类号： H01S5/5009 , H01S5/3201
摘要： The invention concerns a semiconductor optical amplifier. The optical guide structure of this amplifier comprises a rectangular cross-section active stripe (12). Its material is homogeneous and it is subjected to a tensile strain sufficient to render the amplifier insensitive to the polarisation of the light to be amplified.The invention finds an application in optical telecommunications.
摘要翻译： PCT No.PCT / FR97 / 00373 Sec。 371日期1997年10月29日第 102（e）日期1997年10月29日PCT 1997年3月3日PCT公布。公开号WO97 / 33353 日期：1997年9月12日本发明涉及一种半导体光放大器。该放大器的光导结构包括矩形截面有源条纹（12）。其材料是均匀的，并且其经受足够的拉伸应变以使放大器对待放大的光的偏振不敏感。本发明在光通信中发现了一种应用。

4. 发明授权

US5707890A Method of shifting a wavelength in a semiconductor structure having quantum wells 失效
标题翻译：在具有量子阱的半导体结构中偏移波长的方法
公开(公告)号：US5707890A
公开(公告)日：1998-01-13
申请号：US409581
申请日：1995-03-24
申请人： Jean-Yves Emery , Leon Goldstein
发明人： Jean-Yves Emery , Leon Goldstein
IPC分类号： G02F2/02 , H01L29/06 , H01L29/66 , H01S3/10 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20 , H01S5/34 , H01L21/225
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/2059 , H01S5/3413
摘要： From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.
摘要翻译：从III-V型半导体结构的顶面，在井之间的元件和内部量子结构的势垒之间的相互扩散是热诱导的。互扩散仅在结构的一个部分中执行，即其中特征波长被移位以便构成振幅调制器的部分，该结构的另一个部分包括布拉格光栅，以便构成激光发射器。根据本发明，通过电介质封装层与保持与顶面接触的铟层引起相互扩散。本发明特别适用于光通信。

5. 发明授权

US06310719B1 Semi conductor optical amplifier 有权
标题翻译：半导体光放大器
公开(公告)号：US06310719B1
公开(公告)日：2001-10-30
申请号：US09410052
申请日：1999-10-01
申请人： Leon Goldstein , Jean-Yves Emery , Fabienne Gaborit
发明人： Leon Goldstein , Jean-Yves Emery , Fabienne Gaborit
IPC分类号： H01S300
CPC分类号： H01S5/5009 , H01S5/3201
摘要： The invention relates to a semi-conductor optical amplifier insensitive to the polarization of light. The active layer (20) of this amplifier is made up of an alternating series of solid sub-layers alternately under tensile stress (21) and compressive stress (22) and having the same forbidden band-width. The sub-layers under tensile stress (21) favour the propagation of the TM mode of polarization of light and the sub-layers under compression (22) favour the propagation of the TE mode of polarization of light. In addition, the thicknesses of the sub-layers have values which ensure equal gains G(TE) and G(TM) for the active layer.
摘要翻译：本发明涉及对光的偏振不敏感的半导体光放大器。该放大器的有源层（20）由拉伸应力（21）和压缩应力（22）交替的交替的固体子层组成，具有相同的禁带宽度。拉伸应力下的子层（21）有利于光的TM偏振模的传播和压缩下的子层（22）有利于光的TE偏振模的传播。此外，子层的厚度具有确保有源层的相等增益G（TE）和G（TM）的值。

6. 发明授权

US5646064A Method of fabricating a segmented monocrystalline chip 失效
标题翻译：制造分段单晶芯片的方法
公开(公告)号：US5646064A
公开(公告)日：1997-07-08
申请号：US375982
申请日：1995-01-20
申请人： Elisabeth Gaumont-Goarin , Christine Labourie , Jean-Yves Emery
发明人： Elisabeth Gaumont-Goarin , Christine Labourie , Jean-Yves Emery
IPC分类号： H01S5/00 , H01L33/00 , H01S5/026 , H01S5/06 , H01L21/20
CPC分类号： H01L33/0062 , H01S5/026
摘要： A portion of the surface of the first structure is protected by an oxide deposit, and the non-protective layers are etched down to a stop layer. The layers in the etched zone are then built up by molecular beam epitaxy, and one of the built-up layers is given a composition that is different from the composition of the corresponding adjacent layer in the first structure. The method is applicable to fabricating an integrated semiconductor comprising both a laser and a modulator.
摘要翻译：第一结构的表面的一部分由氧化物沉积物保护，并且非保护层被蚀刻到停止层。蚀刻区中的层然后由分子束外延构建，并且其中一个积层被给予与第一结构中相应相邻层的组成不同的组成。该方法适用于制造包括激光器和调制器的集成半导体。

7. 发明授权

US06894833B2 Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US06894833B2
公开(公告)日：2005-05-17
申请号：US10110131
申请日：2001-08-20
申请人： Léon Goldstein , Jean-Yves Emery , Frédéric Pommereau
发明人： Léon Goldstein , Jean-Yves Emery , Frédéric Pommereau
IPC分类号： H01S5/50 , H01S5/02 , H01S5/042 , H01S5/06 , H01S5/227 , H01S3/00
CPC分类号： H01S5/50 , H01S5/02 , H01S5/0425 , H01S5/0607 , H01S5/2275 , H01S2301/14
摘要： The invention relates to a semiconductor optical amplifier including a buried guide active structure (12), characterized in that the guide active structure (12) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material (50) against a ridge (15) surrounding said guide active structure (12).
摘要翻译：本发明涉及一种包括掩埋导向有源结构（12）的半导体光放大器，其特征在于，所述导向有源结构（12）经受外部应力，以使所述放大器的增益对于所述光的偏振不敏感所述外部应力来自由材料（50）沉积围绕所述引导活动结构（12）的脊（15）引起的力。

8. 发明授权

US06954594B2 Monolithic semiconductor component for regenerating optical signals 失效
标题翻译：用于再生光信号的单片半导体元件
公开(公告)号：US06954594B2
公开(公告)日：2005-10-11
申请号：US10445949
申请日：2003-05-28
申请人： Alexandre Shen , Nabil Sahri , Jean-Yves Emery
发明人： Alexandre Shen , Nabil Sahri , Jean-Yves Emery
IPC分类号： G02F1/35 , H04B10/299 , H04L7/00 , H04B10/00
CPC分类号： H04B10/299 , G02F1/3523 , H04L7/0075
摘要： For regenerating a binary optical signal (sd, sE2) a monolithic semiconductor component (100) comprises: a saturable absorber structure (3) having a saturable absorber section (31), a first optical waveguide (1, 11 to 16) defining a first guide axis (X) disposed on either side of the section (31), a second optical waveguide (2, 21 to 24) defining a second guide axis (Y) crossing the first axis (X) in the section (31) and disposed on either side of the section (31). The saturable absorber structure has a dimension along the first guide axis greater than its dimension along the second guide axis.The first and second waveguides respectively inject an optical clock signal (c1) and the binary optical signal (sd, sE2). Application to optical transmission systems for regenerating signals in accordance with two different regeneration regimes.
摘要翻译：为了重新生成二进制光信号，单片半导体元件（100）包括：具有可饱和吸收器部分（31）的饱和吸收体结构（3）），限定设置在所述部分（31）的每一侧上的第一引导轴线（X）的第一光波导（1,11至16），限定第二引导轴线（Y）的第二光波导（2,21至24））在所述部分（31）中与所述第一轴线（X）交叉并设置在所述部分（31）的任一侧上。可饱和吸收体结构具有沿第一引导轴线大于沿着第二引导轴线的尺寸的尺寸。第一和第二波导分别注入光学时钟信号（c1> 1）和二进制光信号（s SUB）。应用于根据两种不同再生方式再生信号的光传输系统。

9. 发明授权

US06751015B2 Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US06751015B2
公开(公告)日：2004-06-15
申请号：US10110378
申请日：2002-04-11
申请人： Léon Goldstein , Jean-Yves Emery
发明人： Léon Goldstein , Jean-Yves Emery
IPC分类号： H01S300
CPC分类号： H01S5/10 , H01S5/0625 , H01S5/1064 , H01S5/1085 , H01S5/5009 , H01S2301/14
摘要： The invention concerns a semiconductor optical amplifier including at least two amplifier sections (30, 40) respectively favoring a higher gain of the TE mode and the TM mode of polarization of the light to be amplified, said sections each having an active guide structure (12) of the same thickness (e), the amplifier being characterized in that the active guide structure (12) of the two sections (30, 40) is subjected to respective different tension stresses and/or has a different geometry so as to render the overall gain of the amplifier insensitive to the polarization of said light to be amplified, and in that there is no discontinuity of the effective refractive index at the transition between the sections (30, 40).
摘要翻译：本发明涉及一种包括至少两个放大器部分（30,40）的半导体光放大器，分别有利于TE模式的较高增益和待放大的光的TM偏振模式，所述部分各自具有主动导向结构（12 ），所述放大器的特征在于，两个部分（30,40）的主动导向结构（12）经受相应的不同张力应力和/或具有不同的几何形状，以使得所述放大器的总增益对所述要被放大的光的偏振不敏感，并且在所述部分（30,40）之间的转变处，所述有效折射率没有不连续性。

10. 发明授权

US06473225B1 Light amplifier device 失效
标题翻译：光放大器装置
公开(公告)号：US06473225B1
公开(公告)日：2002-10-29
申请号：US09791606
申请日：2001-02-26
申请人： Thierry Zami , Dominique Chiaroni , Nicolas Le Sauze , Alain Pons , Jean-Yves Emery , François Dorgeuille
发明人： Thierry Zami , Dominique Chiaroni , Nicolas Le Sauze , Alain Pons , Jean-Yves Emery , François Dorgeuille
IPC分类号： H01S300
CPC分类号： H04B10/294 , H01S5/50 , H01S2301/06 , H04B10/2914
摘要： In order to be able to use a semiconductor light amplifier of conventional type and operating under gain saturation conditions while nevertheless providing constant gain for an optical signal to be amplified, the device comprises means for producing a compensation light wave and coupling means for injecting the optical signal to be amplified and the compensation light wave into the amplifier. The compensation light wave presents amplitude modulation such that when combined with the optical signal to be amplified the overall amplitude modulation is eliminated or at least attenuated. The device is applicable to optical transmission systems operating at a single wavelength or with wavelength division multiplexing.
摘要翻译：为了能够使用常规类型的半导体光放大器并在增益饱和条件下工作，同时为要放大的光信号提供恒定的增益，该器件包括用于产生补偿光波的装置和用于注入光学器件的耦合装置信号被放大，补偿光波进入放大器。补偿光波呈现幅度调制，使得当与要放大的光信号组合时，整体幅度调制被消除或至少衰减。该器件适用于以单波长或波分复用工作的光传输系统。

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