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1. 发明申请

US20070230044A1 Magnetic writer pole with a graded magnetic moment 有权
标题翻译：磁刻机极与分级磁矩
公开(公告)号：US20070230044A1
公开(公告)日：2007-10-04
申请号：US11390681
申请日：2006-03-28
申请人： Dehua Han , Xuefei Tang , Christopher James Rea , Jianhua Xue
发明人： Dehua Han , Xuefei Tang , Christopher James Rea , Jianhua Xue
IPC分类号： G11B5/127
CPC分类号： G11B5/1278
摘要： A magnetic writer includes a write pole configured to reduce a skew effect during writing to a magnetic medium. A trailing portion of the write pole has a magnetic moment greater than a leading portion of the write pole.
摘要翻译：磁性写入器包括写入磁极，其被配置为在写入磁性介质期间减小偏斜效应。写入极的后端部分的磁矩大于写入极的引导部分。

2. 发明授权

US07609478B2 Magnetic writer pole with a graded magnetic moment 有权
标题翻译：磁刻机极与分级磁矩
公开(公告)号：US07609478B2
公开(公告)日：2009-10-27
申请号：US11390681
申请日：2006-03-28
申请人： Dehua Han , Xuefei Tang , Christopher James Thompson Rea , Jianhua Xue
发明人： Dehua Han , Xuefei Tang , Christopher James Thompson Rea , Jianhua Xue
IPC分类号： G11B5/31 , G11B5/127
CPC分类号： G11B5/1278
摘要： A magnetic writer includes a write pole configured to reduce a skew effect during writing to a magnetic medium. A trailing portion of the write pole has a magnetic moment greater than a leading portion of the write pole.
摘要翻译：磁性写入器包括写入磁极，其被配置为在写入磁性介质期间减小偏斜效应。写入极的后端部分的磁矩大于写入极的引导部分。

3. 发明申请

US20110075472A1 MAGNETORESISTIVE DEVICE HAVING SPECULAR SIDEWALL LAYERS 有权
标题翻译：具有典型面板层的磁性装置
公开(公告)号：US20110075472A1
公开(公告)日：2011-03-31
申请号：US12963380
申请日：2010-12-08
申请人： Song S. Xue , Paul E. Anderson , Michael C. Kautzky , Xuefei Tang , Patrick J. Ryan
发明人： Song S. Xue , Paul E. Anderson , Michael C. Kautzky , Xuefei Tang , Patrick J. Ryan
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.
摘要翻译：多层磁阻器件包括位于至少一个侧壁上的镜面层和位于镜面层与侧壁之间的铜层。

4. 发明申请

US20070097559A1 Magnetoresistive device having specular sidewall layers 有权
标题翻译：具有镜面侧壁层的磁阻器件
公开(公告)号：US20070097559A1
公开(公告)日：2007-05-03
申请号：US11637585
申请日：2006-12-12
申请人： Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
发明人： Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.
摘要翻译：多层磁阻器件包括位于至少一个侧壁上的镜面层，并且铜层位于镜面层和侧壁之间。

5. 发明授权

US06621667B1 Giant magnetoresistive sensor with a multilayer cap layer 失效
标题翻译：具有多层盖层的巨型磁阻传感器
公开(公告)号：US06621667B1
公开(公告)日：2003-09-16
申请号：US09908244
申请日：2001-07-18
申请人： Qing He , Song S. Xue , Xuefei Tang , Bryan K. Oliver , Patrick J. Ryan
发明人： Qing He , Song S. Xue , Xuefei Tang , Bryan K. Oliver , Patrick J. Ryan
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996
摘要： A giant magnetoresistive spin valve for use in a magnetic read head includes a ferromagnetic free layer and a multilayer cap layer. The free layer has a rotatable magnetic moment. The multilayer cap layer is positioned adjacent to the free layer for increasing electron specular scattering of the free layer.
摘要翻译：用于磁读头的巨磁阻自旋阀包括铁磁自由层和多层盖层。自由层具有可旋转的磁矩。多层盖层位于自由层附近，以增加自由层的电子镜面散射。

6. 发明授权

US07177122B2 Biasing for tri-layer magnetoresistive sensors 有权
标题翻译：三层磁阻传感器的偏置
公开(公告)号：US07177122B2
公开(公告)日：2007-02-13
申请号：US10694483
申请日：2003-10-27
申请人： Chunhong Hou , Sining Mao , Eric S. Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric W. Singleton , Song S. Xue
发明人： Chunhong Hou , Sining Mao , Eric S. Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric W. Singleton , Song S. Xue
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G11B5/3909 , G11B2005/0018 , G11B2005/3996
摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.
摘要翻译：公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

7. 发明授权

US07016166B1 Mag-tab design for biasing magnetic sensors 失效
标题翻译： Mag-tab设计用于偏置磁性传感器
公开(公告)号：US07016166B1
公开(公告)日：2006-03-21
申请号：US10406172
申请日：2003-04-03
申请人： Chunhong Hou , Xuefei Tang , Qing He , Lei Wang
发明人： Chunhong Hou , Xuefei Tang , Qing He , Lei Wang
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： A structure for stabilizing the active region of the magnetic sensor comprises a hard ferromagnetic element adjacent to a biasing multilayer element placed on either side of the active region of the magnetic sensor. The biasing multilayer element includes soft ferromagnetic and anti-ferromagnetic layers such that the biasing strength applied to the active region of the magnetic sensor is tuneable by adjusting the length of the soft ferromagnetic layer or layers as well as the insertion of spacer layers between the soft ferromagnetic materials and the anti-ferromagnetic layers. The inventive structure provides longitudinal bias to the active region with improved domain control, signal amplitude and side-reading properties.
摘要翻译：用于稳定磁传感器的有源区域的结构包括与置于磁传感器的有源区域的任一侧上的偏置多层元件相邻的硬铁磁元件。偏置多层元件包括软铁磁和反铁磁层，使得施加到磁传感器的有源区的偏置强度可通过调节软铁磁层的长度以及在柔软的铁磁层之间插入间隔层铁磁材料和反铁磁层。本发明的结构提供了有源区域的纵向偏置，具有改进的域控制，信号幅度和侧读特性。

8. 发明申请

US20050088789A1 Biasing for tri-layer magnetoresistive sensors 有权
标题翻译：三层磁阻传感器的偏置
公开(公告)号：US20050088789A1
公开(公告)日：2005-04-28
申请号：US10694483
申请日：2003-10-27
申请人： Chunhong Hou , Sining Mao , Eric Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric Singleton , Song Xue
发明人： Chunhong Hou , Sining Mao , Eric Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric Singleton , Song Xue
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/3932 , G11B5/3909 , G11B2005/0018 , G11B2005/3996
摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.
摘要翻译：公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

9. 发明授权

US07872323B2 Magnetoresistive device having specular sidewall layers 有权
标题翻译：具有镜面侧壁层的磁阻器件
公开(公告)号：US07872323B2
公开(公告)日：2011-01-18
申请号：US11637585
申请日：2006-12-12
申请人： Song S. Xue , Paul E. Anderson , Michael C. Kautzky , Xuefei Tang , Patrick J. Ryan
发明人： Song S. Xue , Paul E. Anderson , Michael C. Kautzky , Xuefei Tang , Patrick J. Ryan
IPC分类号： H01L27/22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.
摘要翻译：多层磁阻器件包括位于至少一个侧壁上的镜面层，并且铜层位于镜面层和侧壁之间。

10. 发明申请

US20070091675A1 Double bias for a magnetic reader 审中-公开
标题翻译：磁读取器的双重偏置
公开(公告)号：US20070091675A1
公开(公告)日：2007-04-26
申请号：US11254283
申请日：2005-10-20
申请人： Chunhong Hou , Qing He , Xuefei Tang
发明人： Chunhong Hou , Qing He , Xuefei Tang
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： The present invention provides a tunneling giant magnetoresistance (TGMR) sensor. The sensor including an active region. The active region having a first bias layer. The sensor also including a passive region. The passive region has an insulating layer and a second bias layer. Furthermore, the insulating layer is positioned between the active region and the second bias layer.
摘要翻译：本发明提供一种隧道式巨磁阻（TGMR）传感器。传感器包括有源区域。有源区具有第一偏置层。传感器还包括被动区域。无源区具有绝缘层和第二偏置层。此外，绝缘层位于有源区和第二偏压层之间。

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