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1. 发明授权

US06409903B1 Multi-step potentiostatic/galvanostatic plating control 有权
标题翻译：多级恒电位/恒电流电镀控制
公开(公告)号：US06409903B1
公开(公告)日：2002-06-25
申请号：US09469120
申请日：1999-12-21
申请人： Dean S. Chung , Josef W. Korejwa , Erick G. Walton
发明人： Dean S. Chung , Josef W. Korejwa , Erick G. Walton
IPC分类号： C25D500
CPC分类号： C25D5/18 , C25D7/123 , C25D17/001 , Y10S204/09
摘要： A method and apparatus are provided for the electroplating of a substrate such as a semiconductor wafer which provides a uniform electroplated surface and minimizes bum-through of a seed layer used on the substrate to initiate electroplating. The method and apparatus of the invention uses a specially defined multistep electroplating process wherein, in one aspect, a voltage below a predetermined threshold voltage is applied to the anode and cathode for a first time period followed by applying a current to the anode and cathode for a second time period the current producing a voltage below the predetermined threshold voltage. In another aspect of the invention, a current is applied to the anode and cathode substrate which current is preprogrammed to ramp up to a current value from a first current value which current produces a voltage below a predetermined threshold voltage. Electroplated articles including copper electroplated semiconductor wafers made using the apparatus and method of the invention are also provided.
摘要翻译：提供了一种用于电镀诸如半导体晶片的基板的方法和装置，该半导体晶片提供均匀的电镀表面并且最小化在基板上使用的种子层的通过以启动电镀。本发明的方法和装置使用特别限定的多级电镀工艺，其中在一个方面，将低于预定阈值电压的电压第一时间施加到阳极和阴极，随后向阳极和阴极施加电流，第二时间段，电流产生低于预定阈值电压的电压。在本发明的另一方面，电流被施加到阳极和阴极衬底上，该电流被预编程，以从当前产生低于预定阈值电压的电压的第一电流值斜升到电流值。还提供了使用本发明的装置和方法制造的包括铜电镀半导体晶片的电镀制品。

2. 发明授权

US5434109A Oxidation of silicon nitride in semiconductor devices 失效
标题翻译：半导体器件中氮化硅的氧化
公开(公告)号：US5434109A
公开(公告)日：1995-07-18
申请号：US54112
申请日：1993-04-27
申请人： Stephen F. Geissler , Josef W. Korejwa , Jerome B. Lasky , Pai-Hung Pan
发明人： Stephen F. Geissler , Josef W. Korejwa , Jerome B. Lasky , Pai-Hung Pan
IPC分类号： H01L21/318 , H01L21/314 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/02
CPC分类号： H01L21/3144
摘要： A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600.degree. C. is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF.sub.3 is the fluorine-containing compound, and a temperature greater than about 700.degree. C. at a concentration of between about 100 to 1000 ppm is used.
摘要翻译：半导体器件中的氮化硅层通过在足够高的温度下暴露于氧反应物和稀释的含氟化合物的混合物而被氧化，从而基本上导致氮化硅的氧化。通常，大于约600℃的温度足以引起这种氧化，尽管在较低温度下可能发生一些氧化。含氟化合物的浓度也不是关键的，但相对于总混合物体积通常为约100至1500ppm体积。优选地，NF 3是含氟化合物，并且使用浓度在约100至1000ppm之间的大于约700℃的温度。

3. 发明授权

US06210541B1 Process and apparatus for cold copper deposition to enhance copper plating fill 失效
标题翻译：用于冷铜沉积的方法和设备，以增强镀铜填充
公开(公告)号：US06210541B1
公开(公告)日：2001-04-03
申请号：US09067454
申请日：1998-04-28
申请人： Edward C. Cooney, III , Josef W. Korejwa , David C. Strippe
发明人： Edward C. Cooney, III , Josef W. Korejwa , David C. Strippe
IPC分类号： C23C1434
CPC分类号： C23C14/046 , C23C14/16 , C23C14/541
摘要： A process and apparatus for depositing thin films onto a substrate. The process comprises mounting a wafer onto a wafer chuck and pumping a cryogenic fluid through the chuck which cools the wafer chuck and the wafer to a temperature below about +20° C. A thin film is then deposited over the cooled wafer using a sputter deposition process while maintaining the temperature of the wafer chuck and the wafer below about +20° C. The preferred embodiment of the present invention includes the use of liquid nitrogen as the cryogenic fluid, and copper as the material to be deposited through the sputtering process. In addition, the preferred embodiment cools the wafer chuck and the wafer to a temperature of about −100° C. The apparatus includes the physical vapor deposition vessel, the wafer chuck, the source of material to be deposited, the wafer, and the cooling line which passes through the wafer chuck to carry the cooling fluid to the chuck.
摘要翻译：一种用于将薄膜沉积到衬底上的工艺和设备。该方法包括将晶片安装到晶片卡盘上并将低温流体泵送通过将晶片卡盘和晶片冷却至约+ 20℃的温度的卡盘。然后使用溅射沉积物将薄膜沉积在冷却的晶片上同时保持晶片卡盘和晶片的温度低于约+ 20℃。本发明的优选实施例包括使用液氮作为低温流体，铜作为通过溅射工艺沉积的材料。此外，优选实施例将晶片卡盘和晶片冷却至约-100℃的温度。该装置包括物理气相沉积容器，晶片卡盘，要沉积的材料源，晶片和冷却线通过晶片卡盘将冷却流体运送到卡盘。

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