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    • 2. 发明申请
    • Nanowire varactor diode and methods of making same
    • 纳米线变容二极管及其制作方法
    • US20050212079A1
    • 2005-09-29
    • US10806361
    • 2004-03-23
    • David StumboJian ChenDavid HealdYaoling Pan
    • David StumboJian ChenDavid HealdYaoling Pan
    • H01L29/06H01L29/93
    • B82Y10/00H01L29/0665H01L29/0673H01L29/068H01L29/93Y10S977/762
    • A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
    • 公开了一种纳米线变容二极管及其制造方法。 该结构包括运行半导体纳米线长度的同轴电容器。 在一个实施例中,第一导电类型的半导体纳米线沉积在衬底上。 在纳米线表面的至少一部分上形成绝缘体。 纳米线的区域掺杂有第二导电类型的材料。 在绝缘体和掺杂区域的至少一部分上形成第一电接触。 在纳米线的非掺杂药液上形成第二电接触。 在操作期间,纳米线表面的导电类型反转,并且在向第一和第二电触点施加电压时形成耗尽区。 因此,变容二极管作为施加电压的函数呈现可变电容。
    • 4. 发明授权
    • Nanowire varactor diode and methods of making same
    • 纳米线变容二极管及其制作方法
    • US07115971B2
    • 2006-10-03
    • US10806361
    • 2004-03-23
    • David StumboJian ChenDavid HealdYaoling Pan
    • David StumboJian ChenDavid HealdYaoling Pan
    • H01L29/93
    • B82Y10/00H01L29/0665H01L29/0673H01L29/068H01L29/93Y10S977/762
    • A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
    • 公开了一种纳米线变容二极管及其制造方法。 该结构包括运行半导体纳米线长度的同轴电容器。 在一个实施例中,第一导电类型的半导体纳米线沉积在衬底上。 在纳米线表面的至少一部分上形成绝缘体。 纳米线的区域掺杂有第二导电类型的材料。 在绝缘体和掺杂区域的至少一部分上形成第一电接触。 在纳米线的非掺杂药液上形成第二电接触。 在操作期间,纳米线表面的导电类型反转,并且在向第一和第二电触点施加电压时形成耗尽区。 因此,变容二极管作为施加电压的函数呈现可变电容。