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1. 发明申请

US20060060877A1 High efficiency group III nitride-silicon carbide light emitting diode 有权
标题翻译：高效率III族氮化硅 - 碳化硅发光二极管
公开(公告)号：US20060060877A1
公开(公告)日：2006-03-23
申请号：US10951042
申请日：2004-09-22
申请人： John Edmond , Jayesh Bharathan , David Slater
发明人： John Edmond , Jayesh Bharathan , David Slater
IPC分类号： H01L33/00
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译：公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，并且将与添加的相邻的碳化硅基板相对的一部分从而减小接合的基板，有源部分和副安装结构的整体厚度。所得到的子安装结构可以连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将有源部分与引线框架分开，并避免不必要的有源部分和引线框架之间的电接触。

2. 发明申请

US20050029526A1 Methods of Treating a Silicon Carbide Substrate for Improved Epitaxial Deposition and Resulting Structures and Devices 有权
标题翻译：处理碳化硅基板以改善外延沉积和结果结构和器件的方法
公开(公告)号：US20050029526A1
公开(公告)日：2005-02-10
申请号：US10709780
申请日：2004-05-27
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/336 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

3. 发明申请

US20050095737A1 Robust group III light emitting diode for high reliability in standard packaging applications 有权
标题翻译：坚固的III类发光二极管，用于标准封装应用中的高可靠性
公开(公告)号：US20050095737A1
公开(公告)日：2005-05-05
申请号：US10983983
申请日：2004-11-08
申请人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
发明人： John Edmond , Brian Thibeault , David Slater , Gerald Negley , Van Mieczkowski
IPC分类号： H01L21/318 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/44 , H01L21/00
CPC分类号： H01L33/44 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. A method of manufacturing a light emitting diode and an LED lamp incorporating the diode are also disclosed.
摘要翻译：公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。还公开了一种制造发光二极管的方法和结合二极管的LED灯。

4. 发明申请

US20070161137A1 METHODS OF MANUFACTURING LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS 有权
标题翻译：制造发光二极体的方法，包括障碍层/子层
公开(公告)号：US20070161137A1
公开(公告)日：2007-07-12
申请号：US11688605
申请日：2007-03-20
申请人： David Slater , Bradley Williams , Peter Andrews , John Edmond , Scott Allen
发明人： David Slater , Bradley Williams , Peter Andrews , John Edmond , Scott Allen
IPC分类号： H01L21/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

5. 发明申请

US20060186418A1 External extraction light emitting diode based upon crystallographic faceted surfaces 有权
公开(公告)号：US20060186418A1
公开(公告)日：2006-08-24
申请号：US11343180
申请日：2006-01-30
申请人： John Edmond , David Slater , Hua Kong , Matthew Donofrio
发明人： John Edmond , David Slater , Hua Kong , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.

6. 发明申请

US20060033111A1 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US20060033111A1
公开(公告)日：2006-02-16
申请号：US11243581
申请日：2005-10-05
申请人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
发明人： Davis McClure , Alexander Suvorov , John Edmond , David Slater
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A silicon carbide structure is disclosed that is suitable for use as a substrate in the manufacture of electronic devices such as light emitting diodes. The structure includes a silicon carbide wafer having a first and second surface and having a predetermined conductivity type and an initial carrier concentration; a region of implanted dopant atoms extending from the first surface into the silicon carbide wafer to a predetermined depth, with the region having a higher carrier concentration than the initial carrier concentration in the remainder of the wafer; and an epitaxial layer on the first surface of the silicon carbide wafer.
摘要翻译：公开了一种碳化硅结构，其适用于制造诸如发光二极管的电子器件中的基板。该结构包括具有第一表面和第二表面并具有预定导电类型和初始载流子浓度的碳化硅晶片; 注入掺杂剂原子的区域从第一表面延伸到碳化硅晶片到预定深度，该区域具有比晶片剩余部分中的初始载流子浓度更高的载流子浓度; 以及在碳化硅晶片的第一表面上的外延层。

7. 发明申请

US20050253154A1 LED bonding structures and methods of fabricating LED bonding structures 有权
标题翻译： LED结合结构和制造LED结合结构的方法
公开(公告)号：US20050253154A1
公开(公告)日：2005-11-17
申请号：US11114639
申请日：2005-04-26
申请人： David Slater , John Edmond
发明人： David Slater , John Edmond
IPC分类号： G01N33/68 , H01L27/15 , H01L33/38 , H01L33/40 , H01L33/62
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pad is designed to accept 30 g to 70 g of force or more without squeeze-out.
摘要翻译： LED芯片包括适合于热或热压接的接合焊盘，例如Sn，AuSn或其它金属。选择焊盘的物理尺寸以阻止或防止在具有或不具有焊剂的热压或热超声粘合期间焊料挤出。在一些实施例中，AuSn接合焊盘设计成在不挤出的情况下接受30g至70g的力或更多的力。

8. 发明申请

US20050194603A1 Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor 有权
标题翻译：包括阻挡层/子层的发光二极管及其制造方法
公开(公告)号：US20050194603A1
公开(公告)日：2005-09-08
申请号：US11039566
申请日：2005-01-20
申请人： David Slater , Bradley Williams , Peter Andrews , John Edmond , Scott Allen
发明人： David Slater , Bradley Williams , Peter Andrews , John Edmond , Scott Allen
IPC分类号： H01L33/20 , H01L33/40 , H01L33/44 , H01L33/62 , H01L21/00 , H01L33/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

9. 发明申请

US20050145869A1 Light emitting devices with self aligned ohmic contact and methods of fabricating same 有权
标题翻译：具有自对准欧姆接触的发光器件及其制造方法
公开(公告)号：US20050145869A1
公开(公告)日：2005-07-07
申请号：US10987136
申请日：2004-11-12
申请人： David Slater , John Edmond , Ian Hamilton
发明人： David Slater , John Edmond , Ian Hamilton
IPC分类号： H01L21/265 , H01L21/76 , H01L33/02 , H01L33/32 , H01L29/22
CPC分类号： H01L21/26586 , H01L33/025 , H01L33/32
摘要： Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.
摘要翻译：提供了制造发光二极管和发光器件的方法，其包括衬底，衬底上的n型外延区域和n型外延区域上的p型外延区域。 p型外延区域的至少一部分包括相对于衬底的台面。在p型外延层的露出部分上提供欧姆接触。欧姆接触自对准于台面和p型外延层的侧壁，使得欧姆接触的侧壁基本上与台面的侧壁和p型外延层对准。

10. 发明申请

US20060060874A1 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US20060060874A1
公开(公告)日：2006-03-23
申请号：US11082470
申请日：2005-03-17
申请人： John Edmond , David Slater , Jayesh Bharathan , Matthew Donofrio
发明人： John Edmond , David Slater , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译：公开了一种高效率III族氮化物发光二极管。二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。

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