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    • 1. 发明授权
    • Apparatus and method for memory read-refresh, scrubbing and variable-rate refresh
    • 用于存储器读取刷新,擦除和可变速率刷新的装置和方法
    • US08024638B2
    • 2011-09-20
    • US11558450
    • 2006-11-10
    • David R. ResnickVan L. SnyderMichael F. Higgins
    • David R. ResnickVan L. SnyderMichael F. Higgins
    • H03M13/00
    • G06F11/106G11C11/401G11C29/44G11C29/4401G11C29/848G11C2029/0401
    • A memory controller and method that provide a read-refresh (also called “distributed-refresh”) mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.
    • 提供读取刷新(也称为“分布式刷新”)操作模式的存储器控​​制器和方法,其中在存储器部件的刷新速率要求内读取存储器的每一行,其中来自不同列的数据 在随后的读取刷新循环中读取行,直到读取每个列地址的所有行,如果找到则擦除错误,从而提供集成到读取刷新操作中的擦除功能,而不是独立操作。 为了进行擦除,安排了原子读取 - 正确写入操作。 描述了可变优先级的可变定时刷新间隔。 描述了集成卡自测试器和/或卡互换测试器。 描述了地址范围内的存储器位交换电路,以及用于在飞行和测试中进行位交换的方法和装置。
    • 4. 发明申请
    • METHOD AND APPARATUS FOR MEMORY READ-REFRESH, SCRUBBING AND VARIABLE-RATE REFRESH
    • 存储器读取,刷新和可变速率刷新的方法和装置
    • US20120246544A1
    • 2012-09-27
    • US13237676
    • 2011-09-20
    • David R. ResnickVan L. SnyderMichael F. Higgins
    • David R. ResnickVan L. SnyderMichael F. Higgins
    • H03M13/05G06F11/10G06F12/00
    • G06F11/106G11C11/401G11C29/44G11C29/4401G11C29/848G11C2029/0401
    • A memory controller and method that provide a read-refresh (also called “distributed-refresh”) mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.
    • 提供读取刷新(也称为“分布式刷新”)操作模式的存储器控​​制器和方法,其中在存储器部件的刷新速率要求内读取存储器的每一行,其中来自不同列的数据 在随后的读取刷新循环中读取行,直到读取每个列地址的所有行,如果找到则擦除错误,从而提供集成到读取刷新操作中的擦除功能,而不是独立操作。 为了进行擦除,安排了原子读取 - 正确写入操作。 描述了可变优先级的可变定时刷新间隔。 描述了集成卡自测试器和/或卡互换测试器。 描述了地址范围内的存储器位交换电路,以及用于在飞行和测试中进行位交换的方法和装置。
    • 5. 发明授权
    • Method and apparatus for memory read-refresh, scrubbing and variable-rate refresh
    • 用于存储器读取刷新,擦除和可变速率刷新的方法和装置
    • US08347176B2
    • 2013-01-01
    • US13237676
    • 2011-09-20
    • David R. ResnickVan L. SnyderMichael F. Higgins
    • David R. ResnickVan L. SnyderMichael F. Higgins
    • H03M13/00
    • G06F11/106G11C11/401G11C29/44G11C29/4401G11C29/848G11C2029/0401
    • A memory controller and method that provide a read-refresh (also called “distributed-refresh”) mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.
    • 提供读刷新(也称为分布式刷新)操作模式的存储器控​​制器和方法,其中在存储器部件的刷新速率要求内读取每一行存储器,其中来自行内不同列的数据为 在随后的读取刷新循环中读取,直到读取每个列地址的所有行,如果找到,则清除错误,从而提供集成到读取刷新操作中的擦除功能,而不是独立操作。 为了进行擦除,安排了原子读取 - 正确写入操作。 描述了可变优先级的可变定时刷新间隔。 描述了集成卡自测试器和/或卡互换测试器。 描述了地址范围内的存储器位交换电路,以及用于在飞行和测试中进行位交换的方法和装置。
    • 8. 发明授权
    • Apparatus and method for memory bit-swapping-within-address-range circuit
    • 存储器位交换内部地址范围电路的装置和方法
    • US07565593B2
    • 2009-07-21
    • US11558454
    • 2006-11-10
    • R. Paul DixonDavid R. ResnickVan L. Snyder
    • R. Paul DixonDavid R. ResnickVan L. Snyder
    • H03M13/00
    • G06F11/106G11C11/401G11C29/44G11C29/4401G11C29/848G11C2029/0401
    • A memory controller and method that provide a read-refresh (also called “distributed-refresh”) mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.
    • 提供读取刷新(也称为“分布式刷新”)操作模式的存储器控​​制器和方法,其中在存储器部件的刷新速率要求内读取存储器的每一行,其中来自不同列的数据 在随后的读取刷新循环中读取行,直到读取每个列地址的所有行,如果找到则擦除错误,从而提供集成到读取刷新操作中的擦除功能,而不是独立操作。 为了进行擦除,安排了原子读取 - 正确写入操作。 描述了可变优先级的可变定时刷新间隔。 描述了集成卡自测试器和/或卡互换测试器。 描述了地址范围内的存储器位交换电路,以及用于在飞行和测试中进行位交换的方法和装置。