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1. 发明授权

US06878970B2 Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells 有权
标题翻译：具有用于增加量子阱的有效载流子捕获截面的元件的发光器件
公开(公告)号：US06878970B2
公开(公告)日：2005-04-12
申请号：US10418408
申请日：2003-04-17
申请人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
发明人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
IPC分类号： H01S5/343 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/00 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105
摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
摘要翻译：描述发光器件。发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。第一层位于量子阱层和第一阻挡层之间。第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。载体捕获元素增加量子阱的有效载流子俘获截面。

2. 发明授权

US06839370B2 Optoelectronic device using a disabled tunnel junction for current confinement 有权
标题翻译：光电器件使用禁用的隧道结进行电流限制
公开(公告)号：US06839370B2
公开(公告)日：2005-01-04
申请号：US10040167
申请日：2001-12-31
申请人： Frank H. Peters , Michael H. Leary , Yoon-Kyu Song , Frederick A. Kish, Jr.
发明人： Frank H. Peters , Michael H. Leary , Yoon-Kyu Song , Frederick A. Kish, Jr.
IPC分类号： H01S5/042 , H01L33/14 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/323 , H01S5/00
CPC分类号： H01S5/18341 , H01L33/145 , H01S5/18308 , H01S5/2063 , H01S5/3095 , H01S2301/166
摘要： An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

3. 发明授权

US06320206B1 Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：具有晶片结合的铝镓铟氮化物结构和反射镜叠层的发光器件
公开(公告)号：US06320206B1
公开(公告)日：2001-11-20
申请号：US09245435
申请日：1999-02-05
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H01L3300
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

4. 发明授权

US06420199B1 Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks 有权
标题翻译：制造具有铝镓铟氮化物结构和反射镜叠层的发光器件的方法
公开(公告)号：US06420199B1
公开(公告)日：2002-07-16
申请号：US09923711
申请日：2001-08-06
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H05L2120
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译：具有垂直光路的发光器件，例如可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。电触点被添加到发光器件中。

5. 发明授权

US06233267B1 Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique 失效
标题翻译：蓝色/紫外/绿色垂直腔表面发射激光采用侧边过度生长（LEO）技术
公开(公告)号：US06233267B1
公开(公告)日：2001-05-15
申请号：US09233006
申请日：1999-01-19
申请人： Arto V Nurmikko , Yoon-Kyu Song
发明人： Arto V Nurmikko , Yoon-Kyu Song
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2214 , H01S5/34333 , H01S2304/12
摘要： A vertical cavity, surface emitting laser (VCSEL) device (10, 10′) has a substrate (12) and, disposed over a surface of the substrate, a Group III nitride buffer layer (14) and a mesa structure containing at least a portion of an n-type Group III nitride layer (16). The VCSEL device and mesa structure further include a first multilayer dielectric mirror stack (18a), that is embedded within the first Group III nitride layer by the use of a lateral edge overgrowth (LEO) process; a p-type Group III nitride layer (26); and a p-n junction between the n-type Group III nitride layer and the p-type Group III nitride layer. The p-n junction contains an active multiquantum well region (24). Also contained in the mesa structure is a dielectric (silicon dioxide) layer (20) having a current constricting aperture (20a). The dielectric layer and aperture are buried within one of the n-type Group III nitride layer or the p-type Group III nitride layer, also by the use of the LEO process. A second multilayer dielectric mirror stack (18b) is disposed on top of the mesa structure and over the p-type Group III nitride layer. The first and second multilayer dielectric mirror stacks define a resonant optical cavity structure that passes through the aperture, and that supports an emission of less than 500 nm in the blue/green or NUV spectral regions.
摘要翻译：垂直腔表面发射激光器（VCSEL）装置（10,10'）具有衬底（12），并且设置在衬底的表面上，具有第III族氮化物缓冲层（14）和包含至少部分为n型III族氮化物层（16）。 VCSEL器件和台面结构还包括通过使用横向边缘过度生长（LEO）工艺嵌入在第一III族氮化物层内的第一多层介电镜叠层（18a）; p型III族氮化物层（26）; 以及n型III族氮化物层和p型III族氮化物层之间的p-n结。 p-n结包含活性多量子阱区（24）。也包含在台面结构中的是具有电流收缩孔（20a）的电介质（二氧化硅）层（20）。电介质层和孔径也被埋在n型III族氮化物层或p型III族氮化物层之一内，也通过使用LEO工艺。第二多层介质镜叠层（18b）设置在台面结构的顶部和p型III族氮化物层上方。第一和第二多层介质镜叠层限定了通过孔的共振光学腔结构，并支持在蓝/绿或NUV光谱区中小于500nm的发射。

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