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1. 发明授权

US08338200B2 Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same 有权
标题翻译：前照射反向量子阱红外光电探测器及其制造方法
公开(公告)号：US08338200B2
公开(公告)日：2012-12-25
申请号：US13019658
申请日：2011-02-02
申请人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
发明人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
IPC分类号： H01L21/00 , H01L31/0232 , H01S5/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/101
摘要： A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
摘要翻译：制造前照射反向量子阱红外光电探测器的方法可以包括提供具有体基底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替量子阱层和外延生长的势垒层本体衬底层。该方法还包括将至少一个正面公共电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，使量子阱晶片的体基底层变薄，并蚀刻量子材料以形成限定至少一个锥体量子阱堆叠的量子阱面。背面电接触可以应用于锥体量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。

2. 发明授权

US08450720B2 Frontside-illuminated inverted quantum well infrared photodetector devices 有权
标题翻译：前照射反向量子阱红外光电探测器
公开(公告)号：US08450720B2
公开(公告)日：2013-05-28
申请号：US13605465
申请日：2012-09-06
申请人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
发明人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/101
摘要： A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
摘要翻译：制造前照射反向量子阱红外光电探测器的方法可以包括提供具有体基底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替量子阱层和外延生长的势垒层大量衬底层。该方法还包括将至少一个正面公共电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，使量子阱晶片的体基底层变薄，并蚀刻量子材料以形成限定至少一个锥体量子阱堆叠的量子阱面。背面电接触可以应用于锥体量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。

3. 发明申请

US20120326124A1 FRONTSIDE-ILLUMINATED INVERTED QUANTUM WELL INFRARED PHOTODETECTOR DEVICES 有权
标题翻译： FRONTSIDE-ILLUMINED INVEDTED QUANTUM好的红外光电转换装置
公开(公告)号：US20120326124A1
公开(公告)日：2012-12-27
申请号：US13605465
申请日：2012-09-06
申请人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
发明人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
IPC分类号： H01L31/0352
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/101
摘要： A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
摘要翻译：制造前照射反向量子阱红外光电探测器的方法可以包括提供具有体基底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替量子阱层和外延生长的势垒层大量衬底层。该方法还包括将至少一个正面公共电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，使量子阱晶片的体基底层变薄，并蚀刻量子材料以形成限定至少一个锥体量子阱堆叠的量子阱面。背面电接触可以应用于锥体量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。

4. 发明申请

US20120193608A1 FRONTSIDE-ILLUMINATED INVERTED QUANTUM WELL INFRARED PHOTODETECTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译： FRONTSIDE-ILLUMINED INVEDTED QUANTUM WELL红外光电设备及其制造方法
公开(公告)号：US20120193608A1
公开(公告)日：2012-08-02
申请号：US13019658
申请日：2011-02-02
申请人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
发明人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
IPC分类号： H01L31/0352 , H01L31/02 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/101
摘要： A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
摘要翻译：制造前照射反向量子阱红外光电探测器的方法可以包括提供具有体基底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替量子阱层和外延生长的势垒层本体衬底层。该方法还包括将至少一个正面公共电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，使量子阱晶片的体基底层变薄，并蚀刻量子材料以形成限定至少一个锥体量子阱堆叠的量子阱面。背面电接触可以应用于锥体量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。

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